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Oxidative recycling of metals is crucial for a circular economy, encompassing the preservation of natural resources, the reduction of energy consumption, and the mitigation of environmental impacts and greenhouse gas emissions associated with traditional mining and processing. Low-melting gallium trichloride appears to be a promising oxidative solvent for rare-earth metals, transuranium elements, platinum, pnictogens, and chalcogens. Typically, oxidative dissolution with GaCl3 occurs at relatively low temperatures over a few days, assuming the presence of tetrahedral Ga-Cl entities. While supercritical gallium trichloride holds the potential for advanced recycling, little is known about its structure and viscosity. Using high-energy X-ray diffraction and multiscale modeling, which includes first-principles simulations, we have revealed a dual molecular nature of supercritical gallium trichloride, consisting of tetrahedral dimers and flat trigonal monomers. The molecular geometry can be precisely tuned by adjusting the temperature and pressure, optimizing the recycling process for specific metals. The derived viscosity, consistent with the reported results in the vicinity of melting, decreases by a factor of 100 above the critical temperature, enabling fast molecular diffusion, and efficient recycling kinetics.
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Molten gallium trichloride emerges as a promising solvent for oxidative metal recycling. The use of supercritical fluid enhances the performance and kinetics of metal dissolution due to significantly lower viscosity in the reaction media. Additionally, the dual molecular nature of gallium trichloride, existing as edge-sharing ES-Ga2Cl6 dimers at low temperatures and high pressure, or flat trigonal GaCl3 monomers in the vicinity of the critical point and low pressures, creates the possibility to tailor the chemical geometry to a particular metallic species. Nevertheless, the mechanism of dimer dissociation, local structure, and atomic dynamics in supercritical gallium trichloride fluids are not known. Using first-principles molecular dynamics, validated by comparison with our high-energy X-ray diffraction results, we illustrate the elementary steps in dimer dissociation. These include the formation of intermediate corner-sharing CS-Ga2Cl6 dimers, the partial disproportionation of GaCl3 monomers at high temperatures and low pressures, changes in the local environment of molecular entities, and unusual atomic dynamics in supercritical fluids.
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High-capacity solid-state batteries are promising future products for large-scale energy storage and conversion. Sodium fast ion conductors including glasses and glass ceramics are unparalleled materials for these applications. Rational design and tuning of advanced sodium sulfide electrolytes need a deep insight into the atomic structure and dynamics in relation with ion-transport properties. Using pulsed neutron diffraction and Raman spectroscopy supported by first-principles simulations, we show that preferential diffusion pathways in vitreous sodium and silver sulfides are related to isolated sulfur Siso, that is, the sulfur species surrounded exclusively by mobile cations with a typical stoichiometry of M/Siso ≈ 2. The Siso/Stot fraction appears to be a reliable descriptor of fast ion transport in glassy sulfide systems over a wide range of ionic conductivities and cation diffusivities. The Siso fraction increases with mobile cation content x, tetrahedral coordination of the network former and, in case of thiogermanate systems, with germanium disulfide metastability and partial disproportionation, GeS2 â GeS + S, leading to the formation of additional sulfur, transforming into Siso. A research strategy enabling to achieve extended and interconnected pathways based on isolated sulfur would lead to glassy electrolytes with superior ionic diffusion.
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Chalcogenide glasses are widely used as sensitive membranes in the chemical sensors for heavy metal ions detection. The lack of research work on sodium ion-selective electrodes (Na+-ISEs) based on chalcogenide glasses is due to the high hygroscopicity of alkali dopes chalcogenides. However, sodium halide doped Ga2S3-GeS2 glasses are more chemically stable in water and could be used as Na+-sensitive membranes for the ISEs. In this work we have studied the physico-chemical properties of mixed cation (AgI)x(NaI)30-x(Ga2S3)26(GeS2)44 chalcogenide glasses (where x = 0, 7.5, 15, 22.5 and 30 mol.% AgI) using density, DSC, and conductivity measurements. The mixed cation effect with shallow conductivity and glass transition temperature minimum was found for silver fraction r = Ag/(Na + Ag) ≈ 0.5. Silver addition decreases the moisture resistance of the glasses. Only (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 composition was suitable for chemical sensors application, contrary to the single cation sodium halide doped Ga2S3-GeS2 glasses, where 15 mol.% sodium-halide-containing vitreous alloys are stable in water solutions. The analytical parameters of (NaCl)15(Ga2S3)23(GeS2)62; (NaI)15(Ga2S3)23(GeS2)62 and (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 glass compositions as active membranes in Na+-ISEs were investigated, including detection limit, sensitivity, linearity, ionic selectivity (in the presence of K+, Mg2+, Ca2+, Ba2+, and Zn2+ interfering cations), reproducibility and optimal pH-range.
Assuntos
Prata , Sódio , Reprodutibilidade dos Testes , Água/química , ÍonsRESUMO
Sodium-conducting sulfide glasses are promising materials for the next generation of solid-state batteries. Deep insight into the glass structure is required to ensure a functional design and tailoring of vitreous alloys for energy applications. Using pulsed neutron diffraction supported by first-principles molecular dynamics, we show a structural diversity of Na2S-As2S3 sodium thioarsenate glasses, consisting of long corner-sharing (CS) pyramidal chains CS-(AsSS2/2)k, small AspSq rings (p + q ≤ 11), mixed corner- and edge-sharing oligomers, edge-sharing (ES) dimers ES-As2S4, and isolated (ISO) pyramids ISO-AsS3, entirely or partially connected by sodium species. Polysulfide S-S bridges and structural units with homopolar As-As bonds complete the glass structure, which is basically different from structural motifs predicted by the equilibrium phase diagram. In contrast to superionic silver and sodium sulfide glasses, characterized by a significant population of isolated sulfur species Siso (0.20 < Siso/Stot < 0.28), that is, sulfur connected to only mobile cations M+ with a usual M/Siso stoichiometry of 2, poorly conducting Na2S-As2S3 alloys exhibit a modest Siso fraction of 6.2%.
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Glassy GeS2, densified at 8.3 GPa, exhibits a strongly reduced bandgap, predominantly tetrahedral Ge environment, enhanced chemical disorder and partial 3-fold coordination of both germanium and sulfur, assuming two possible reaction paths under high pressure: (i) a simple dissociation 2Ge-S â Ge-Ge + S-S and (ii) a chemical disproportionation GeS2 â GeS + S. The observed electronic and structural changes remain intact for at least seven years under ambient conditions but are gradually evolving upon heating. The relaxation kinetics at elevated temperatures, up to the glass transition temperature Tg, suggests that complete recovery of the densified glassy GeS2 over a typical operational T-range of optoelectronic devices will take many thousands of years. The observed logarithmic relaxation and nearly infinite recovery time at room temperature raise questions about the nature of millennia-long phenomena in densified GeS2. Two alternative explanations will be discussed: (1) hidden polyamorphism and (2) continuous structural and chemical changes under high pressure. These investigations offer valuable insights into the behavior of glassy GeS2 under extreme conditions and its potential applications in optoelectronic devices and other advanced technologies.
RESUMO
Neuromorphic computing, reconfigurable optical metamaterials that are operational over a wide spectral range, holographic and nonvolatile displays of extremely high resolution, integrated smart photonics, and many other applications need next-generation phase-change materials (PCMs) with better energy efficiency and wider temperature and spectral ranges to increase reliability compared to current flagship PCMs, such as Ge2Sb2Te5 or doped Sb2Te. Gallium tellurides are favorable compounds to achieve the necessary requirements because of their higher melting and crystallization temperatures, combined with low switching power and fast switching rate. Ga2Te3 and non-stoichiometric alloys appear to be atypical PCMs; they are characterized by regular tetrahedral structures and the absence of metavalent bonding. The sp3 gallium hybridization in cubic and amorphous Ga2Te3 is also different from conventional p-bonding in flagship PCMs, raising questions about its phase-change mechanism. Furthermore, gallium tellurides exhibit a number of unexpected and highly unusual phenomena, such as nanotectonic compression and viscosity anomalies just above their melting points. Using high-energy X-ray diffraction, supported by first-principles simulations, we will elucidate the atomic structure of amorphous Ga2Te5 PLD films, compare it with the crystal structure of tetragonal gallium pentatelluride, and investigate the electrical, optical, and thermal properties of these two materials to assess their potential for memory applications, among others.
RESUMO
Gallium tellurides appear to be promising phase-change materials (PCMs) of the next generation for brain-inspired computing and reconfigurable optical metasurfaces. They are different from the benchmark PCMs because of sp3 gallium hybridization in both cubic Ga2Te3 and amorphous pulsed laser deposition (PLD) films. Liquid Ga2Te3 also shows a viscosity η(T) anomaly just above melting when η(T) first increases and only then starts decreasing. We used high-energy X-ray diffraction to observe a transient mesoscopic immiscibility that suggested dense metallic liquid droplets in a semiconducting melt. The η(T) shape was consistent with this finding. A vanishing first sharp diffraction peak that also shifts to a higher Q indicates a high internal pressure in the metallic melt, which produces a remarkable asymmetry of the Ga-Te nearest neighbor distances and is reminiscent of high-pressure rhombohedral Ga2Te3. The observed phenomena provide a realistic scenario for a fast, multilevel SET-RESET response, which also unravels similar trends in the purported density-driven liquid polyamorphism of water, phosphorus, sulfur, and other materials.
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Binary Ge-Te and ternary Ge-Sb-Te systems belong to flagship phase-change materials (PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The working temperatures of these PCMs are limited by low-T glass transition and crystallization phenomena. Promising high-T PCMs may include gallium tellurides; however, the atomic structure and transformation processes for amorphous Ga-Te binaries are simply missing. Using high-energy X-ray diffraction and Raman spectroscopy supported by first-principles simulations, we elucidate the short- and intermediate-range order in bulk glassy GaxTe1-x, 0.17 ≤ x ≤ 0.25, following their thermal, electric, and optical properties, revealing a semiconductor-metal transition above melting. We also show that a phase change in binary Ga-Te is characterized by a very unusual nanotectonic compression with the high internal transition pressure reaching 4-8 GPa, which appears to be beneficial for PCM applications increasing optical and electrical contrast between the SET and RESET states and decreasing power consumption.
RESUMO
Glasses in the pseudo-binary system (HgS)x (GeS2)1-x were synthesized over the concentration range of 0.0 ≤ x ≤ 0.5. The fundamental glass properties (macroscopic, electric, and vibrational) were studied using differential scanning calorimetry (DSC), direct current (dc) electrical measurements, Raman spectroscopy supported by DFT modeling, and X-ray diffraction. Mercury species in thiogermanate glasses essentially form chain-like (HgS2/2) fragments substituting bridging sulfur between corner- and edge-sharing GeS4/2 tetrahedra. This structural evolution results in a significant monotonic decrease of the glass transition temperatures from 480 to 270 °C. The room-temperature dc conductivity changes non-monotonically with increasing HgS content x over a limited range of 4 × 10-15 to 7 × 10-13 S cm-1. The electronic transport in insulating HgS-GeS2 glasses occurs via extended electronic states. Tetrahedral HgS4/4 fragments also appear in the glass network with increasing x. Their exact population needs further advanced structural studies using diffraction techniques.
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Group 13 trihalides MY3 (M = Al, Ga, and In; Y = Cl, Br, and I) mostly having a dimeric M2Y6 molecular structure in the solid state and a mixture of M2Y6 dimers and MY3 monomers in the vapor phase are potential candidates for entropy-driven liquid-liquid transition M2Y6 â 2MY3 at elevated temperatures. Using pulsed neutron diffraction and high-energy X-ray scattering supported by structural modeling, we show a dimer molecular structure of liquid GaCl3 above the melting point at 351 K and midway between the boiling point (474 K) and the critical temperature (694 K) with almost hidden characteristic evolution toward a possible liquid-liquid transition. In contrast to edge-sharing (ES) dimers in solid and vapor of D2h symmetry, the ES Ga2Cl6 molecules in the melt have a puckered structure of the central four-membered ring with shorter Cl-Cl (2.90-3.09 Å) and longer Ga-Ga (3.20-3.26 Å) second-neighbor correlations. The elongation of Ga-Ga intramolecular distances with increasing temperature simultaneously with diminished Cl-Cl nearest neighbor contacts destabilizes the ES dimers, indicating the first step toward dimer dissociation.