Index matching at the nanoscale: light scattering by core-shell Si/SiO x nanowires.

Silicon nanowires (SiNWs) show strong resonant wavelength enhancement in terms of absorption as well as scattering of light. However, in most optoelectronic device concepts the SiNWs should be surrounded by a contact layer. Ideally, such a layer can also act as an index matching layer which could nearly halve the strong reflectance of light by silicon. Our results show that this reduction can be overcome at the nanometer scale, i.e. SiNWs embedded in a silica (SiO x ) layer can not only maintain their high scattering cross sections but also their strong polarization dependent scattering. Such effects can be useful for light harvesting or optoelectronic applications. Moreover, we show that it is possible to optically determine the diameters of the embedded nanoscale silicon (Si) cores.

Ultrasensitive silicon nanowire for real-world gas sensing: noninvasive diagnosis of cancer from breath volatolome.

We report on an ultrasensitive, molecularly modified silicon nanowire field effect transistor that brings together the lock-and-key and cross-reactive sensing worlds for the diagnosis of (gastric) cancer from exhaled volatolome. The sensor is able to selectively detect volatile organic compounds (VOCs) that are linked with gastric cancer conditions in exhaled breath and to discriminate them from environmental VOCs that exist in exhaled breath samples but do not relate to the gastric cancer per se. Using breath samples collected from actual patients with gastric cancer and from volunteers who do not have cancer, blind analysis validated the ability of the reported sensor to discriminate between gastric cancer and control conditions with >85% accuracy, irrespective of important confounding factors such as tobacco consumption and gender. The reported sensing approach paves the way to use the power of silicon nanowires for simple, inexpensive, portable, and noninvasive diagnosis of cancer and other disease conditions.

Far-field imaging for direct visualization of light interferences in GaAs nanowires.

The optical and electrical characterization of nanostructures is crucial for all applications in nanophotonics. Particularly important is the knowledge of the optical near-field distribution for the design of future photonic devices. A common method to determine optical near-fields is scanning near-field optical microscopy (SNOM) which is slow and might distort the near-field. Here, we present a technique that permits sensing indirectly the infrared near-field in GaAs nanowires via its second-harmonic generated (SHG) signal utilizing a nonscanning far-field microscope. Using an incident light of 820 nm and the very short mean free path (16 nm) of the SHG signal in GaAs, we demonstrate a fast surface sensitive imaging technique without using a SNOM. We observe periodic intensity patterns in untapered and tapered GaAs nanowires that are attributed to the fundamental mode of a guided wave modulating the Mie-scattered incident light. The periodicity of the interferences permits to accurately determine the nanowires' radii by just using optical microscopy, i.e., without requiring electron microscopy.

Silicon Nanowire Sensors Enable Diagnosis of Patients via Exhaled Breath.

Two of the biggest challenges in medicine today are the need to detect diseases in a noninvasive manner and to differentiate between patients using a single diagnostic tool. The current study targets these two challenges by developing a molecularly modified silicon nanowire field effect transistor (SiNW FET) and showing its use in the detection and classification of many disease breathprints (lung cancer, gastric cancer, asthma, and chronic obstructive pulmonary disease). The fabricated SiNW FETs are characterized and optimized based on a training set that correlate their sensitivity and selectivity toward volatile organic compounds (VOCs) linked with the various disease breathprints. The best sensors obtained in the training set are then examined under real-world clinical conditions, using breath samples from 374 subjects. Analysis of the clinical samples show that the optimized SiNW FETs can detect and discriminate between almost all binary comparisons of the diseases under examination with >80% accuracy. Overall, this approach has the potential to support detection of many diseases in a direct harmless way, which can reassure patients and prevent numerous unpleasant investigations.

Enhanced photovoltaics inspired by the fovea centralis.

The fovea centralis is a closely-packed vertical array of inverted-cone photoreceptor cells located in the retina that is responsible for high acuity binocular vision. The cones are operational in well-lit environments and are responsible for trapping the impinging illumination. We present the vertical light-funnel silicon array as a light-trapping technique for photovoltaic applications that is bio-inspired by the properties of the fovea centralis. We use opto-electronic simulations to evaluate the performance of light-funnel solar cell arrays. Light-funnel arrays present ~65% absorption enhancement compared to a silicon film of identical thickness and exhibit power conversion efficiencies that are 60% higher than those of optimized nanowire arrays of the same thickness although nanowire arrays consist of more than 2.3 times the amount of silicon. We demonstrate the superior absorption of the light-funnel arrays as compared with recent advancements in the field. Fabrication of silicon light-funnel arrays using low-cost processing techniques is demonstrated.

Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells.

We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) ( PEDOT: PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/ PEDOT: PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT: PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

DNA hybridization assay at individual, biofunctionalized zinc oxide nanowires.

Reliable and efficient identification of DNA is a major goal in on-site diagnostics. One dimensional nanostructures like nanowires (NW) represent potential sensor structures due to their extreme surface-to-bulk ratio, enabling enhanced biomolecule binding which results in optimal signals. While silicon NW are already well studied, NW made from other materials with promising properties like ZnO are not yet established as NW sensor material for bioanalytics. Here we demonstrate the DNA functionalization of ZnO NW even at the single NW level and their successful application in a DNA hybridization assay.

Optical properties of individual silicon nanowires for photonic devices.

Silicon is a high refractive index material. Consequently, silicon nanowires (SiNWs) with diameters on the order of the wavelengths of visible light show strong resonant field enhancement of the incident light, so this type of nanomaterial is a good candidate for all kinds of photonic devices. Surprisingly enough, a thorough experimental and theoretical analysis of both the polarization dependence of the absorption and the scattering behavior of individual SiNWs under defined illumination has not been presented yet. Here, the present paper will contribute by showing optical properties such as scattering and absorption of individual SiNWs experimentally in an optical microscope using bright- and dark-field illumination modes as well as in analytical Mie calculations. Experimental and calculation results are in good agreement, and both reveal a strong correlation of the optical properties of individual SiNWs to their diameters. This finding supports the notion that SiNWs can be used in photonic applications such as for photovoltaics or optical sensors.