RESUMO
Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting the incident polarization along the direction of these lines. This Letter extends the previous studies to systems with two perpendicular gratings, as found e.g. after replacement gate processing of gate-all-around (GAA) field-effect transistors (FETs). We show that besides the nanofocusing effect, the incident polarization also offers control over which array of lines the light couples into. The interaction of the incident light occurs with the semiconducting lines to which the polarization is parallel with remarkably low interference from the existence of another perpendicular grating. We demonstrate the use of this effect with Raman spectroscopy to simultaneously extract the SiGe volume and the strain in the Si forksheet channels and in the SiGe layers of GAA FETs.
RESUMO
Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (µXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-freeµXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-freeµXRF are explained and a validation of ref.-freeµXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-freeµXRF for quantitative analysis.