Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer.

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9×105ℏ2eΩ-1m-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.

Alterations in circulating concentrations of IL-17, IL-31 and total IgE in dogs with atopic dermatitis.

BACKGROUND: The pathogenesis of canine atopic dermatitis (AD) is complex. Dysregulation of the cutaneous immune system is considered an important regulator of the allergic response. Exploration of association of interleukin-17 (IL-17), IL-31, IgE and leukogram attributes with canine AD could provide novel insights into its immunopathology. HYPOTHESIS/OBJECTIVES: To investigate possible associations of IL-17, IL-3, IgE and leukogram attributes of canine AD. ANIMALS: 17 dogs diagnosed with AD and six healthy dogs. METHODS AND MATERIALS: Circulating concentrations of IL-17, IL-31 and total IgE from sera samples were determined using commercial canine-specific quantitative immunoassay kits. Complete blood cell counts were analysed by an automated haematology analyser. Statistical differences between the two groups were determined using an unpaired t-test. The degree of relationship between the IL-17, IL-31, IgE, total leukocyte count (TLC) values and clinical signs scores (Canine Atopic Dermatitis Lesion Index and pruritus Visual Analog Scale pVAS) was determined by Pearson's r correlation statistic. RESULTS: Dogs with AD had significantly (P < 0.0001) higher circulating concentrations of IL-17, IL-31 and total IgE compared with healthy dogs. Dogs with AD also had significantly higher TLC (P < 0.0002), absolute neutrophils (P < 0.0001) and absolute eosinophils (P < 0.0001) counts, and percentage of neutrophils (P < 0.03) and eosinophils (P < 0.0001) compared with healthy controls. A significant positive correlation (r2  = 0.396; P < 0.007) between the pVAS and IL-31 was observed in dogs with AD. CONCLUSIONS AND CLINICAL IMPORTANCE: Marked elevation in circulating IL-17, IL-31 and total IgE along with the abnormalities in leukogram may be associated with canine AD and could be possible targets in the therapeutic management of canine AD.

Manipulating ultrafast magnetization dynamics of ferromagnets using the odd-even layer dependence of two-dimensional transition metal di-chalcogenides.

Two-dimensional transition metal dichalcogenides (TMDs) have drawn immense interest due to their strong spin-orbit coupling and unique layer number dependence in response to spin-valley coupling. This leads to the possibility of controlling the spin degree of freedom of the ferromagnet (FM) in thin film heterostructures and may prove to be of interest for next-generation spin-based devices. Here, we experimentally demonstrate the odd-even layer dependence of WS2 nanolayers by measurements of the ultrafast magnetization dynamics in WS2/Co3FeB thin film heterostructures by using time-resolved Kerr magnetometry. The fluence (photon energy per unit area) dependent magnetic damping (α) reveals the existence of broken symmetry and the dominance of inter- and intraband scattering for odd and even layers of WS2, respectively. The higher demagnetization time, τm, in 3 and 5 layers of WS2 is indicative of the interaction between spin-orbit and spin-valley coupling due to the broken symmetry. The lower τm in even layers as compared to the bare FM layer suggests the presence of a spin transport. By correlating τm and α, we pinpointed the dominant mechanisms of ultrafast demagnetization. The mechanism changes from spin transport to spin-flip scattering for even layers of WS2 with increasing fluence. A fundamental understanding of the two-dimensional material and its odd-even layer dependence at ultrashort timescales provides valuable information for designing next-generation spin-based devices.

High temperature stability in few atomic layer MoS2 based thin film heterostructures: structural, static and dynamic magnetization properties.

Layered transition metal dichalcogenides (TMDs) have shown commendable properties for spintronic applications. From the device perspective, the structural quality of the TMD as well as its interface with the adjacent ferromagnetic (FM) layer is of paramount importance. Here, we present the spin-dynamic behaviour in the widely studied TMDs, i.e., MoS2 using Co60Fe20B20 (CoFeB), i.e., in MoS2(1-4 layers)/CoFeB(4-15 nm) heterostructures, both in the as-grown state and in the in situ annealed state (400 °C in a vacuum). Raman spectroscopy revealed systematic variation in the separation (δ) between the characteristic Raman shifts corresponding to the E2g and A1gvis-à-vis the number of layers (nL) of MoS2. The analysis of the ferromagnetic resonance (FMR) spectroscopy measurements performed on these heterostructures revealed the spin pumping from CoFeB to the MoS2 layer as evidenced by the ∼49% (∼51%) enhancement in the effective damping parameter with respect to the damping parameter of bare as-deposited (annealed) CoFeB films. This enhancement is attributed to the spin-pumping owing to the high spin-orbit coupling of monolayer MoS2. The latter is also confirmed by density functional theory calculations. By finding the effective spin mixing conductance of the MoS2/CoFeB interface, the effective spin current density in the MoS2 layer is estimated to increase from ∼0.3 to 0.7 MA m-2 with CoFeB thickness for both the as-deposited and annealed heterostructures. Furthermore, the δ vs. nL curve of the as-deposited heterostructure did not show any significant change upon annealing, which demonstrated that the spin transport and magnetic properties of these heterostructures remained unaffected even after annealing at a high temperature of 400 °C. Hence, this establishes the high thermal stability of the sputter grown MoS2/CoFeB heterostructures. Thus, this study highlights the important role of MoS2 as an efficient spin current-generating source for spin-orbit torque based magnetic memory applications, given the high-temperature stability and high-quality monolayers of MoS2 and its excellent performance with CoFeB thin films.

Topological transport properties of highly oriented Bi2Te3thin film deposited by sputtering.

Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable. Here, we report the quantitative investigation of non-trivial parameters employing magnetotransport measurements on a prototypical highly textured Bi2Te3 TI thin film prepared by sputtering. Through the systematic analyses of the temperature and magnetic field dependent resistivity, all topological parameters associated with TIs, such as coherency factor (α), Berry phase (Φ_B), mass term (m), the dephasing parameter (p), slope of temperature dependent conductivity correction (κ) and the surface state penetration depth (λ) are estimated by using the modified 'Hikami-Larkin-Nagaoka', 'Lu-Shen' and 'Altshuler-Aronov' models. The obtained values of topological parameters are well comparable to those reported on molecular beam epitaxy grown TIs. The epitaxial growth of Bi2Te3 film using sputtering, and investigation of the non-trivial topological states from its electron-transport behaviour are important for their fundamental understanding and technological applications.

Disordered spin gapless semiconducting CoFeCrGa Heusler alloy thin films on Si (100): experiment and theory.

Spin gapless semiconductors (SGSs) are an intriguing class of quantum materials that bridge the gap between half-metallic ferromagnets and semiconductors. The presence of a semiconducting bandgap for one spin channel and zero band gap for other spin channels, together with the possibility of four different band structure configurations, makes them one of the most desirable candidates to be used in tunable spin transport based spintronics devices. Here, we have performed various structural, magnetic and transport measurements on an optimized CoFeCrGa (CFCG) Heusler alloy thin film (∼50 nm) grown over a Si(100) substrate using an industry-viable magnetron sputtering technique. The grown film showed B2-ordering under the given set of X-ray diffraction measurement conditions with a saturation magnetization (Ms) of 1.86µB per f.u. (at 5 K) and a Curie temperature of ∼595 K. Nearly linearly varying longitudinal resistivity with a negative temperature coefficient was observed. A fitted longitudinal conductivity curve through a "two-carrier model" shows a slight band overlap in the gapless channel for one spin channel and a small energy gap (ΔE) of 167 meV for other spin channels. A negative and linear out-of-plane magnetoresistance response was observed in these films. The temperature dependent anomalous Hall effect measurement gives nearly temperature independent carrier concentration (and/or) mobility with an anomalous Hall conductivity of 91.35 S cm-1 at 5 K. The first principles calculations have also been performed for bulk and (220) CFCG surfaces to correlate the various structural, electronics and magnetic properties of the optimized CFCG Heusler alloy thin film. The DFT derived results, viz. lattice parameter and MS exhibit a good match with the experimentally observed results. All these properties collectively imply that the grown film possesses disordered-SGS like behaviour. It is remarkable to note that CFCG films with the (022) surface possess a very high electronic spin polarization of 91%. The results of the study suggest that CFCG is a potential candidate to be used in spintronics-based devices such as spin-injectors.

Spin Pumping through Different Spin-Orbit Coupling Interfaces in ß-W/Interlayer/Co2FeAl Heterostructures.

Spin pumping has been considered a powerful tool to manipulate the spin current in a ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin-orbit coupling (SOC). In this work, the spin pumping in ß-W/Interlayer (IL)/Co2FeAl (CFA) heterostructures grown on Si(100) is systematically investigated with different ILs in which SOC strength ranges from weak to strong. We first measure the spin pumping through the enhancement of effective damping in CFA by varying the thickness of ß-W. The damping enhancement in the bilayer of ß-W/CFA (without IL) is found to be ∼50% larger than the Gilbert damping in a single CFA layer with a spin diffusion length and spin mixing conductance of 2.12 ± 0.27 nm and 13.17 ± 0.34 nm-2, respectively. Further, the ILs of different SOC strengths such as Al, Mg, Mo, and Ta were inserted at the ß-W/CFA interface to probe their impact on damping in ß-W/ILs/CFA. The effective damping reduced to 8% and 20% for Al and Mg, respectively, whereas it increased to 66% and 75% with ILs of Mo and Ta, respectively, compared to the ß-W/CFA heterostructure. Thus, in the presence of ILs with weak SOC, the spin pumping at the ß-W/CFA interface is suppressed, while for the high SOC ILs effective damping increased significantly from its original value of ß-W/CFA bilayer using a thin IL. This is further confirmed by performing inverse spin Hall effect measurements. In summary, the transfer of spin angular momentum can be significantly enhanced by choosing a proper ultrathin interface layer. Our study provides a tool to increase the spin current production by inserting an appropriate thin interlayer which is useful in modifying the heterostructure for efficient performance in spintronics devices.

Room temperature ferromagnetism in Co-incorporated TiO2 thin films.

Observation of room temperature ferromagnetism (RTFM) in nano-crystalline Co-incorporated titanium dioxide [Ti(1-x)Co(x)O2(x = 0.05)] thin films prepared by spray pyrolysis technique is reported. While only the anatase phase was detected in as-deposited 5 at.% Co-incorporated TiO2 film, a small amount of rutile phase developed following its vacuum annealing. Besides, no X-ray diffraction peak corresponding to cobalt metal could be detected in any of the two films. SQUID magnetometry of both pristine and Co-doped thin films at room temperature elucidated distinct ferromagnetic behavior in 5 at.% Co-incorporated as-deposited film with saturation moment M(s) approximately 5.6 emu/cm3 which got enhanced up to 11.8 emu/cm3 on subsequent vacuum annealing. From the zero field cooled magnetization measurement we confirmed the absence of Co-metal clusters. The electrical resistivity was found to be greater than 108 omega-cm for the films. Based on the magnetic and electrical measurements the origin of RTFM has been attributed to the bound magnetic polaron (BMP) model.

Site-specific growth of oriented ZnO nanocrystal arrays.

We report on the growth of ZnO nanocrystals having a hexagonal, prismatic shape, sized 700 nm × 600 nm, on bare indium tin oxide (ITO) substrates. The growth is induced by a low ion flux and involves a low-temperature electrodeposition technique. Further, vertically aligned periodic nanocrystal (NC) growth is engineered at predefined positions on polymer-coated ITO substrates patterned with ordered pores. The vertical alignment of ZnO NCs along the c-axis is achieved via ion-by-ion nucleation-controlled growth for patterned pores of size ≈600 nm; however, many-coupled branched NCs with hexagonal shape are formed when a patterned pore size of ≈200 nm is used. X-ray diffraction data is in agreement with the observed morphology. A mechanism is proposed to interpret the observed site-specific oriented/branched growth that is correlated to the pore size. As ordered NC arrays have the potential to generate new collective properties different from single NCs, our first demonstration of a cost effective and facile fabrication process opens up new possibilities for devices with versatile functionalities.

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures.

Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable combinations of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results provide a significant step towards designing of room temperature spintronic devices based on skyrmions in full Heusler alloy based thin films.

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers.

The static and dynamic magnetization response of the CoFeB/IrMn/CoFeB trilayer system with varying thickness of the antiferromagnetic (AF) IrMn layer is investigated using magnetization hysteresis (M-H) and ferromagnetic resonance (FMR) measurements. The study shows that the two CoFeB layers are coupled via a long-range dynamic exchange effect through the IrMn layer up to a thickness of 6 nm. It is found that with the increase in IrMn layer thickness a nearly linear enhancement of the effective magnetic damping constant occurs, which is associated with the simultaneous influence of spin pumping and interlayer exchange coupling effects. An extrinsic contribution to the linewidth originating from the two-magnon scattering is also discussed. The AF-induced interfacial damping parameter is derived by studying the evolution of damping with inverse CoFeB thickness. The static magnetic measurements also reveal the interlayer exchange coupling across the IrMn layer both at room temperature and low temperature. The asymmetric hysteresis loop and training effect observed at low temperature is related to the presence of a metastable AF domain state. We show that both the static and dynamic magnetic properties of trilayer films can be adjusted over a wide range by changing the thickness of the IrMn spacer layer.

Capping Layer (CL) Induced Antidamping in CL/Py/ß-W System (CL: Al, ß-Ta, Cu, ß-W).

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (αeff) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/ß-W(tW)/Si (Py = Ni81Fe19 and tW = thickness of ß-W), which is in contrast to the increase of αeff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/ß-W(tW)/Si system. Because of spin pumping, the interfacial spin mixing conductance (g↑↓) at Py/ß-W interface and spin diffusion length (λSD) of ß-W are found to be 1.63(±0.02) × 1018 m-2 (1.44(±0.02) × 1018 m-2) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/ß-W(tW)/Si (ß-W(tW)/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, ß-W(2 nm), Cu(2 nm), and ß-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/ß-W(tW). However, antidamping is seen only in ß-Ta(2,3 nm)/Py(15 nm)/ß-W(tW)/Si. This decrease in αeff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and ß-W(tW) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of αeff is observed, which is ascribed to spin pumping from Py to ß-W layer.

Anomalous anti-damping in sputtered ß-Ta/Py bilayer system.

Anomalous decrease in effective damping parameter αeff in sputtered Ni81Fe19 (Py) thin films in contact with a very thin ß-Ta layer without necessitating the flow of DC-current is observed. This reduction in αeff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of ß-Ta layer; αeff being highest, i.e., 0.0093 ± 0.0003 for bare Ni81Fe19(18 nm)/SiO2/Si compared to the smallest value of 0.0077 ± 0.0001 for ß-Ta(6 nm)/Py(18 nm)/SiO2/Si. This anomalous anti-damping effect is understood in terms of interfacial Rashba effect associated with the formation of a thin protective Ta2O5 barrier layer and also the spin pumping induced non-equilibrium diffusive spin-accumulation effect in ß-Ta layer near the Ta/Py interface which induces additional spin orbit torque (SOT) on the moments in Py leading to reduction in αeff. The fitting of αeff (tTa) revealed an anomalous negative interfacial spin mixing conductance, g(↑↓) = -1.13 ± .05 × 10(18) m(-2) and spin diffusion length, λSD = 2.47 ± 0.47 nm. The increase in αeff observed above tTa = 6 nm is attributed to the weakening of SOT at higher tTa. The study highlights the potential of employing ß-Ta based nanostructures in developing low power spintronic devices having tunable as well as low value of α.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 µB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Interfacial Charge Induced Magnetoelectric Coupling at BiFeO3/BaTiO3 Bilayer Interface.

Bilayer thin films of BiFeO3-BaTiO3 at different thicknesses of BiFeO3 were prepared by RF-magnetron sputtering technique. A pure phase polycrystalline growth of thin films was confirmed from XRD results. Significantly improved ferroelectric polarization (2Pr ∼ 30 µC/cm(2)) and magnetic moment (Ms ∼ 33 emu/cc) were observed at room temperature. Effect of ferroelectric polarization on current conduction across the interface has been explored. Accumulation and depletion of charges at the bilayer interface were analyzed by current-voltage measurements which were further confirmed from hysteretic dynamic resistance and capacitance voltage profiles. Magnetoelectric coupling due to induced charges at grain boundaries of bilayer interface was further investigated by room temperature magnetocapacitance analysis. A room temperature magnetocapacitance was found to originate from induced charge at the bilayer interface which can be manipulated by varying the thickness of BFO to obtain higher ME coupling coefficient. Dynamic magnetoelectric coupling was investigated, and maximum longitudinal magnetoelectric coupling was observed to be 61 mV/cm·Oe at 50 nm thickness of BiFeO3. The observed magnetoelectric properties are potentially useful for novel room temperature magnetoelectric and spintronic device applications.