Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm.

A novel compact micro-integrated high-power narrow-linewidth external-cavity diode laser around 808 nm is demonstrated. The laser system contains a tapered amplifier consisting of a ridge-waveguide section and a tapered section with separated electrical contacts. Thus, the injection currents to both sections can be controlled independently. An external volume Bragg grating is utilized for spectral narrowing and stabilization. The diode laser system is integrated on a 5mm×13mm aluminum nitride micro-optical bench on a conduction cooled package mount with a footprint of 25mm×25mm. The diode laser system is characterized by measuring the output power and spectrum with the injection currents to the ridge-waveguide section (IRW) and tapered amplifier section (ITA) changed in steps of 25 and 50 mA, respectively. At IRW=200mA and ITA=6.0A, 3.5 W of output power is obtained with an emission spectral linewidth with an upper bound of 6 pm, and a beam propagation factor in the slow axis, M2, of 2.6 (1/e2). The characterization of the temperature stabilization of the laser system shows an increase of the wavelength at a rate of 6.5 pm/K, typical for the applied volume Bragg grating.

Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm.

We investigate microsecond pulse-mode operation of a micro-integrated high-power diode laser based on volume Bragg grating external-cavity feedback around 808 nm. The laser system contains a tapered amplifier consisting of a ridge-waveguide section and a tapered section with separated electrical contacts. Thus, the diode laser system can be pulsed by modulating the injected current either to the ridge waveguide section (IRW) or to the tapered amplifier section (ITA). With a trigger signal of a 50 µs pulse width and a 10 kHz repetition rate, comparing the modulation depth, peak output power, beam propagation factor, and spectral bandwidth, we conclude that the pulse-mode operation achieved by modulating the ITA gives better results than by modulating the IRW due to the decreased thermal effect. At a constant IRW of 0.2 A and a modulated ITA of 6.0 A, 4.3 W of peak output power is obtained with an emission spectral bandwidth with an upper bound of 0.2 nm, and a beam propagation factor in the slow axis, Mslow2, of 2.6 (1/e2). The modulation depth is almost 100%. The results show that the tapered diode laser system may be a good candidate for microsecond pulse-mode solid-state lasers.

Two-color interpolation of the absorption response for quantitative acousto-optic imaging.

Diffuse optical tomography (DOT) is a reliable and widespread technique for monitoring qualitative changes in absorption inside highly scattering media. It has been shown, however, that acousto-optic (AO) imaging can provide significantly more qualitative information without the need for inversion algorithms due to the spatial resolution afforded by ultrasound probing. In this Letter, we show how, by using multiple-wavelength AO imaging, it is also possible to perform quantitative measurements of absorber concentration inside scattering media.

Green high-power tunable external-cavity GaN diode laser at 515 nm.

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system.

Tuning range and output power optimization of an external-cavity GaN diode laser at 455 nm.

In this paper we discuss how different feedback gratings affect the tuning range and the output power of external feedback diode laser systems. A tunable high-power narrow-spectrum external-cavity diode laser system around 455 nm is investigated. The laser system is based on a high-power GaN diode laser in a Littrow external-cavity. Both a holographic diffraction grating and a ruled diffraction grating are used as feedback elements in the external cavity. The output power, spectral bandwidth, and tunable range of the external cavity diode laser system are measured and compared with the two gratings at different injected currents. When the holographic grating is used, the laser system can be tuned over a range of 1.4 nm with an output power around 530 mW. When the ruled grating is used, the laser system can be tuned over a range of 6.0 nm with an output power around 80 mW. The results can be used as a guide for selecting gratings for external-cavity diode lasers for different requirements.

High-power dual-wavelength external-cavity diode laser based on tapered amplifier with tunable terahertz frequency difference.

Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. An output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. To our knowledge, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference.

Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation.

High-power narrow-spectrum diode laser systems based on tapered gain media in an external cavity are demonstrated at 675 nm. Two 2 mm long amplifiers are used, one with a 500 µm long ridge-waveguide section (device A), the other with a 750 µm long ridge-waveguide section (device B). Laser system A based on device A is tunable from 663 to 684 nm with output power higher than 0.55 W in the tuning range; as high as 1.25 W output power is obtained at 675.34 nm. The emission spectral bandwidth is less than 0.05 nm throughout the tuning range, and the beam quality factor M(2) is 2.07 at an output power of 1.0 W. Laser system B based on device B is tunable from 666 to 685 nm. As high as 1.05 W output power is obtained around 675.67 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M(2) is 1.13 at an output power of 0.93 W. Laser system B is used as a pump source for the generation of 337.6 nm UV light by single-pass frequency doubling in a bismuth triborate (BIBO) crystal. An output power of 109 µW UV light, corresponding to a conversion efficiency of 0.026% W(-1), is attained.

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm.

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659to675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M(2) is 2.0 with the output power of 1.27 W.

Nonlinear gain amplification due to two-wave mixing in a broad-area semiconductor amplifier with moving gratings.

The two-wave mixing in a broad-area semiconductor amplifier with moving gratings is investigated theoretically, where a pump beam and a signal beam with different frequencies are considered, thus both a moving phase grating and a moving gain grating are induced in the amplifier. The coupled-wave equations of two-wave mixing are derived based on the Maxwell's wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations are obtained in the condition of small signal when the total intensity is far below the saturation intensity of the amplifier. The results show that the optical gain of the amplifier is affected by both the moving phase grating and the moving gain grating, and there is energy exchange between the pump and signal beams. Depending on the moving direction of the gratings and the anti-guiding parameter, the optical gain may increase or decrease due to the two-wave mixing.

Two-wave mixing in a broad-area semiconductor amplifier.

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell's wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations were obtained in the condition of small signal and the total intensity is far below the saturation intensity of the amplifier. The results show that when the amplifier is operated below transparency we obtain an increase in the optical gain, and when the amplifier is operated above transparency we obtain a decrease in the optical gain. The experimental results obtained in an 810 nm, 200 microm wide GaAlAs amplifier show good agreement with the theory. A diffusion length of 2.0 microm is determined from the experiment.

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained.

Self-injection locking of an extraordinarily wide broad-area diode laser with a 1000-microm-wide emitter.

The experimental results of self-injection locking of an antireflection-coated broad-area diode laser with a 1000-microm-wide emitting area are presented. To our knowledge, it is the broadest single-element diode laser that has been used in an external-feedback cavity until now. Usually, wide diode lasers suffer from filamentation, which leads to poor spatial beam quality. We show, however, that the beam quality of the diode laser is improved significantly when we use asymmetric self-injection locking. An output power of 2.05 W is obtained with a beam quality factor M2 of 2.7. The self-injection locking technique improves the beam quality by a factor of 107. By comparing the results with those obtained with an ordinarily coated diode laser with a 1000-microm-wide emitter we show that antireflection coating on the front facet is decisive for this improvement in the beam quality.