Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism.

In this paper, a detailed description of the optical coupling into a Whispering Gallery Mode (WGM) resonator through a prism via frustrated total internal reflection (FTIR) is presented. The problem is modeled as three media with planar interfaces and closed expressions for FTIR are given. Then, the curvature of the resonator is taken into account and the mode overlap is theoretically studied. A new analytical expression giving the optimal geometry of a disc-shaped or ring-shaped resonator for maximizing the intra-cavity circulating power is presented. Such expression takes into consideration the spatial distribution of the WGM at the surface of the resonator, thus being more accurate than the currently used expressions. It also takes into account the geometry of the prism. It is shown an improvement in the geometry values used with the current expressions of about 30%. The reason why the pump laser signal can be seen in experiments under critical coupling is explained on this basis. Then, the conditions required for exciting the highest possible optical power inside the resonator are obtained. The aim is to achieve a highly-efficient up-conversion of a THz signal into the optical domain via the second-order nonlinearity of the resonator material.

Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection.

We report here a photoconductive material for THz detection with sub-picosecond carrier lifetime made by C(12) (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C(12)) ions. With an increase of the irradiation dose from ~10(12) /cm(2) to ~10(15) /cm(2) the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, whereas that of usual non-irradiated SI-GaAs is ~70 picosecond. This decreased carrier lifetime has resulted in a strong improvement in THz pulse detection compared with normal SI-GaAs. Improvement in signal to noise ratio as well as in detection bandwidth is observed. Carbon irradiated SI-GaAs appears to be an economical alternative to low temperature grown GaAs for fabrication of THz devices.

Continuous wave terahertz radiation from antennas fabricated on C¹²-irradiated semi-insulating GaAs.

We demonstrate continuous wave (CW) terahertz generation from antennas fabricated on C12-irradiated semi-insulating (SI) GaAs substrates. The dark current drawn by the antennas fabricated on irradiated substrates is ∼3 to 4 orders of magnitude lower compared to antennas fabricated on un-irradiated substrates, while the photocurrents decrease by only ∼1.5 orders of magnitude. This can be attributed to the strong reduction of the carrier lifetime that is 2.5 orders of magnitude, with values around τ(rec)=0.2 ps. Reduced thermal heating allows for higher bias voltages to the irradiated antenna devices resulting in higher CW terahertz power, just slightly lower than that of low-temperature grown GaAs (LT GaAs)at similar excitation conditions.

Arrayed free space continuous-wave terahertz photomixers.

We present free space coherent arrays of continuous-wave terahertz (THz) photomixers and compare the results to on-chip arrays. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. In addition, the constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of N2 while reducing the beam width by ∼N(-1), below the diffraction limit of a single source. Such array architectures strongly improve the THz power distribution for stand-off spectroscopy and imaging systems while providing a huge bandwidth at the same time. We demonstrate this by beam profiles generated by a 2×2 and a 4×1 array for a transmission distance of 4.2 m. Spectra between 70 GHz and 1.1 THz have been recorded with these arrays.

Coupled whispering gallery mode resonators in the Terahertz frequency range.

We report on coupling of two whispering gallery mode resonators in the Terahertz frequency range. Due to the long wavelength in the millimeter to submillimeter range, the resonators can be macroscopic allowing for accurate size and shape control. This is necessary to couple specific modes of two or more resonators. Sets of polyethylene (PE) and quartz disk resonators are demonstrated, with medium (loaded) quality (Q)-factors of 40-800. Both exhibit coinciding resonance frequency spectra over more than ten times the free spectral range. Loading effects of single resonators are investigated which provide strong Q-factor degradation and red-shifts of the resonances in the 0.2% range. By coupling two resonators of the same size, we observe mode splitting, in very good agreement with our numerical calculations.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Probing semiconductor gap states with resonant tunneling.

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.