Three-dimensional integration of two-dimensional field-effect transistors.

In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'1 but also introduces multifunctionalities for 'More than Moore'2 technologies. Although silicon-based 3D integrated circuits are commercially available3-5, there is limited effort on 3D integration of emerging nanomaterials6,7 such as two-dimensional (2D) materials despite their unique functionalities7-10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, LCH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.

A Crayfish-Inspired Sensor Fusion Platform for Super Additive Integration of Visual, Chemical, and Tactile Information.

The concept of cross-sensor modulation, wherein one sensor modality can influence another's response, is often overlooked in traditional sensor fusion architectures, leading to missed opportunities for enhancing data accuracy and robustness. In contrast, biological systems, such as aquatic animals like crayfish, demonstrate superior sensor fusion through multisensory integration. These organisms adeptly integrate visual, tactile, and chemical cues to perform tasks such as evading predators and locating prey. Drawing inspiration from this, we propose a neuromorphic platform that integrates graphene-based chemitransistors, monolayer molybdenum disulfide (MoS2) based photosensitive memtransistors, and triboelectric tactile sensors to achieve "Super-Additive" responses to weak chemical, visual, and tactile cues and demonstrate contextual response modulation, also referred to as the "Inverse Effectiveness Effect." We hold the view that integrating bio-inspired sensor fusion principles across various modalities holds promise for a wide range of applications.

Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates.

Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in graphene-based electronic devices and sensors. However, the poor ON/OFF current ratio observed in graphene field-effect transistors has stymied its use in many applications. Here, we introduce a graphene strain-effect transistor (GSET) with a colossal ON/OFF current ratio in excess of 107 by exploiting strain-induced reversible nanocrack formation in the source/drain metal contacts with the help of a piezoelectric gate stack. GSETs also exhibit steep switching with a subthreshold swing (SS) < 1 mV/decade averaged over ∼6 orders of magnitude change in the source-to-drain current for both electron and hole branch amidst a finite hysteresis window. We also demonstrate high device yield and strain endurance for GSETs. We believe that GSETs can significantly expand the application space for graphene-based technologies beyond what is currently envisioned.

A Graphene-Based Straintronic Physically Unclonable Function.

Physically unclonable functions (PUFs) are an integral part of modern-day hardware security. Various types of PUFs already exist, including optical, electronic, and magnetic PUFs. Here, we introduce a novel straintronic PUF (SPUF) by exploiting strain-induced reversible cracking in the contact microstructures of graphene field-effect transistors (GFETs). We found that strain cycling in GFETs with a piezoelectric gate stack and high-tensile-strength metal contacts can lead to an abrupt transition in some GFET transfer characteristics, whereas other GFETs remain resilient to strain cycling. Strain sensitive GFETs show colossal ON/OFF current ratios >107, whereas strain-resilient GFETs show ON/OFF current ratios <10. We fabricated a total of 25 SPUFs, each comprising 16 GFETs, and found near-ideal performance. SPUFs also demonstrated resilience to regression-based machine learning (ML) attacks in addition to supply voltage and temporal stability. Our findings highlight the opportunities for emerging straintronic devices in addressing some of the critical needs of the microelectronics industry.

Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors.

Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics. However, proper FET scaling requires reduction of both channel length (LCH) and contact length (LC), the latter of which has remained a challenge due to increased current crowding at the nanoscale. Here, we investigate Au contacts to monolayer MoS2 FETs with LCH down to 100 nm and LC down to 20 nm to evaluate the impact of contact scaling on FET performance. Au contacts are found to display a ∼2.5× reduction in the ON-current, from 519 to 206 µA/µm, when LC is scaled from 300 to 20 nm. It is our belief that this study is warranted to ensure an accurate representation of contact effects at and beyond the technology nodes currently occupied by silicon.

Active pixel sensor matrix based on monolayer MoS2 phototransistor array.

In-sensor processing, which can reduce the energy and hardware burden for many machine vision applications, is currently lacking in state-of-the-art active pixel sensor (APS) technology. Photosensitive and semiconducting two-dimensional (2D) materials can bridge this technology gap by integrating image capture (sense) and image processing (compute) capabilities in a single device. Here, we introduce a 2D APS technology based on a monolayer MoS2 phototransistor array, where each pixel uses a single programmable phototransistor, leading to a substantial reduction in footprint (900 pixels in ∼0.09 cm2) and energy consumption (100s of fJ per pixel). By exploiting gate-tunable persistent photoconductivity, we achieve a responsivity of ∼3.6 × 107 A W-1, specific detectivity of ∼5.6 × 1013 Jones, spectral uniformity, a high dynamic range of ∼80 dB and in-sensor de-noising capabilities. Further, we demonstrate near-ideal yield and uniformity in photoresponse across the 2D APS array.

Bayesian Noise Modelling for State Estimation of the Spread of COVID-19 in Saudi Arabia with Extended Kalman Filters.

The epistemic uncertainty in coronavirus disease (COVID-19) model-based predictions using complex noisy data greatly affects the accuracy of pandemic trend and state estimations. Quantifying the uncertainty of COVID-19 trends caused by different unobserved hidden variables is needed to evaluate the accuracy of the predictions for complex compartmental epidemiological models. A new approach for estimating the measurement noise covariance from real COVID-19 pandemic data has been presented based on the marginal likelihood (Bayesian evidence) for Bayesian model selection of the stochastic part of the Extended Kalman filter (EKF), with a sixth-order nonlinear epidemic model, known as the SEIQRD (Susceptible-Exposed-Infected-Quarantined-Recovered-Dead) compartmental model. This study presents a method for testing the noise covariance in cases of dependence or independence between the infected and death errors, to better understand their impact on the predictive accuracy and reliability of EKF statistical models. The proposed approach is able to reduce the error in the quantity of interest compared to the arbitrarily chosen values in the EKF estimation.

An Ultra-steep Slope Two-dimensional Strain Effect Transistor.

We introduce a high-performance and ultra-steep slope switch, referred to as strain effect transistor (SET), with a subthreshold swing < 0.68 mV/decade at room temperature for 7 orders of magnitude change in the source-to-drain current based on atomically thin 1T'-MoTe2 as the channel material, piezoelectric lead zirconate titanate (PZT) as the gate dielectric, and nickel (Ni) as the source/drain contact metal. We exploit gate-voltage induced strain transduction in PZT leading to abrupt and reversible cracking of the metal contacts to achieve the abrupt switching. The SET also exhibits a low OFF-state current < 1 pA/µm, a high ON-state current > 1.8 mA/µm at a supply voltage of 1 V, a large current ON/OFF ratio > 1 × 109, and a high transconductance of > 100 µS/µm. The switching delay for the SET was found to be < 5 µs, and no device failure was observed even after 1 million (1 × 106) switching cycles.

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS.

Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high-performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n-type TMDs such as MoS2 and WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics necessitates integration of large area p-type semiconductors. Furthermore, the physical separation of memory and logic is a bottleneck of the existing CMOS technology and must be overcome to reduce the energy burden for computation. In this article, the existing limitations are overcome and for the first time, a heterogeneous integration of large area grown n-type MoS2 and p-type vanadium doped WSe2 FETs with non-volatile and analog memory storage capabilities to achieve a non-von Neumann 2D CMOS platform is introduced. This manufacturing process flow allows for precise positioning of n-type and p-type FETs, which is critical for any IC development. Inverters and a simplified 2-input-1-output multiplexers and neuromorphic computing primitives such as Gaussian, sigmoid, and tanh activation functions using this non-von Neumann 2D CMOS platform are also demonstrated. This demonstration shows the feasibility of heterogeneous integration of wafer scale 2D materials.

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications.

Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.