Detalhe da pesquisa
1.
Performance improvement of Hf0.45Zr0.55Oxferroelectric field effect transistor memory with ultrathin Al-O bonds-modified InOxchannels.
Nanotechnology
; 34(17)2023 Feb 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-36701799
2.
Flexible and Filter-Free Color-Imaging Sensors with Multicomponent Perovskites Deposited Using Enhanced Vapor Technology.
Small
; 17(26): e2007543, 2021 Jul.
Artigo
em Inglês
| MEDLINE | ID: mdl-34096175
3.
High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr3/CsPbI3 blend quantum dots.
Nanotechnology
; 32(9): 095204, 2021 Feb 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-33137802
4.
Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application.
Nano Lett
; 20(6): 4111-4120, 2020 06 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-32186388
5.
Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al2O3 spacer layer.
Nanotechnology
; 27(16): 165705, 2016 Apr 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-26963868
6.
Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing.
Phys Chem Chem Phys
; 18(24): 16377-85, 2016 Jun 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-27263423
7.
Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al(2)O(3)/p-Si heterojunction.
Opt Express
; 23(19): 24456-63, 2015 Sep 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-26406650
8.
Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O3 buffer layer.
Opt Express
; 22(18): 22184-9, 2014 Sep 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-25321593
9.
Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection.
ACS Appl Mater Interfaces
; 16(7): 9060-9067, 2024 Feb 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-38336611
10.
Flexible Microspectrometers Based on Printed Perovskite Pixels with Graded Bandgaps.
ACS Appl Mater Interfaces
; 15(5): 7129-7136, 2023 Feb 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-36710447
11.
High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics.
Nanomaterials (Basel)
; 13(11)2023 May 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-37299668
12.
Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions.
ACS Appl Mater Interfaces
; 14(7): 9368-9376, 2022 Feb 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-35147029
13.
Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots.
ACS Nano
; 16(2): 2442-2451, 2022 Feb 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-35088590
14.
Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition.
Nanoscale Adv
; 4(21): 4648-4657, 2022 Oct 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-36341289
15.
Spectrum Reconstruction with Filter-Free Photodetectors Based on Graded-Band-Gap Perovskite Quantum Dot Heterojunctions.
ACS Appl Mater Interfaces
; 14(12): 14455-14465, 2022 Mar 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-35311251
16.
Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications.
Mater Horiz
; 8(2): 538-546, 2021 02 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-34821269
17.
Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation.
RSC Adv
; 10(6): 3572-3578, 2020 Jan 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-35497714
18.
Spectrum projection with a bandgap-gradient perovskite cell for colour perception.
Light Sci Appl
; 9: 162, 2020.
Artigo
em Inglês
| MEDLINE | ID: mdl-33014357
19.
Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation.
Adv Sci (Weinh)
; 7(8): 1903480, 2020 Apr.
Artigo
em Inglês
| MEDLINE | ID: mdl-32328430
20.
Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning.
Nanoscale
; 12(16): 9116-9123, 2020 Apr 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-32292983