Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

The mechanical and electronic properties of two-dimensional materials make them promising for use in flexible electronics1-3. Their atomic thickness and large-scale synthesis capability could enable the development of 'smart skin'1,3-5, which could transform ordinary objects into an intelligent distributed sensor network6. However, although many important components of such a distributed electronic system have already been demonstrated (for example, transistors, sensors and memory devices based on two-dimensional materials1,2,4,7), an efficient, flexible and always-on energy-harvesting solution, which is indispensable for self-powered systems, is still missing. Electromagnetic radiation from Wi-Fi systems operating at 2.4 and 5.9 gigahertz8 is becoming increasingly ubiquitous and would be ideal to harvest for powering future distributed electronics. However, the high frequencies used for Wi-Fi communications have remained elusive to radiofrequency harvesters (that is, rectennas) made of flexible semiconductors owing to their limited transport properties9-12. Here we demonstrate an atomically thin and flexible rectenna based on a MoS2 semiconducting-metallic-phase heterojunction with a cutoff frequency of 10 gigahertz, which represents an improvement in speed of roughly one order of magnitude compared with current state-of-the-art flexible rectifiers9-12. This flexible MoS2-based rectifier operates up to the X-band8 (8 to 12 gigahertz) and covers most of the unlicensed industrial, scientific and medical radio band, including the Wi-Fi channels. By integrating the ultrafast MoS2 rectifier with a flexible Wi-Fi-band antenna, we fabricate a fully flexible and integrated rectenna that achieves wireless energy harvesting of electromagnetic radiation in the Wi-Fi band with zero external bias (battery-free). Moreover, our MoS2 rectifier acts as a flexible mixer, realizing frequency conversion beyond 10 gigahertz. This work provides a universal energy-harvesting building block that can be integrated with various flexible electronic systems.

Supermolecule Cucurbituril Subnanoporous Carbon Supercapacitor (SCSCS).

It is quite challenging to prepare subnanometer porous materials from traditional porous precursors, and use of supramolecules as carbon sources was seldom reported due to the complex preparation and purification processes. We explore a facile one-pot method to fabricate supramolecular coordination compounds as carbon sources. The resultant CB[6]-derived carbons (CBC) have a high N content of 7.0-22.0%, surface area of 552-861 m2 g-1, and subnano/mesopores. The CBC electrodes have a narrow size distribution at 5.9 Å, and the supercapacitor exhibits an energy density of 117.1 Wh kg-1 and a potential window of over 3.8 V in a two-electrode system in the ionic liquid (MMIMBF4) electrolyte with appropriate cationic (5.8 Å) and anionic (2.3 Å) diameter. This work presents the facile fabrication of novel supermolecule cucurbituril subnanoporous carbon materials and the smart design of "pores and balls" for high-performance energy storage systems.

Coexistence of Van Hove singularities and pseudomagnetic fields in modulated graphene bilayer.

The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron correlation, thanks to the moiré superlattice potentials, while the periodic or triaxial strains induce discretization of the band structure into Landau levels without the need for an external magnetic field. We fabricated a hybrid system comprising both the stacking and bending tuning knobs. We have grown the graphene monolayers by chemical vapor deposition, using 12C and 13C precursors, which enabled us to individually address the layers through Raman spectroscopy mapping. We achieved the long-range spatial modulation by sculpturing the top layer (13C) over uniform magnetic nanoparticles (NPs) deposited on the bottom layer (12C). An atomic force microscopy study revealed that the top layer tends to relax into pyramidal corrugations with C3 axial symmetry at the position of the NPs, which have been widely reported as a source of large pseudomagnetic fields (PMFs) in graphene monolayers. The modulated graphene bilayer (MGBL) also contains a few micrometer large domains, with the twist angle ∼10°, which were identified via extreme enhancement of the Raman intensity of the G-mode due to formation of van Hove singularities (VHSs). We thereby conclude that the twist-induced VHSs coexist with the PMFs generated in the strained pyramidal objects without mutual disturbance. The graphene bilayer modulated with magnetic NPs is a non-trivial hybrid system that accommodates features of twist-induced VHSs and PMFs in environs of giant classical spins.

Direct Observation of Symmetry-Dependent Electron-Phonon Coupling in Black Phosphorus.

Electron-phonon coupling in two-dimensional nanomaterials plays a fundamental role in determining their physical properties. Such interplay is particularly intriguing in semiconducting black phosphorus (BP) due to the highly anisotropic nature of its electronic structure and phonon dispersions. Here we report the direct observation of symmetry-dependent electron-phonon coupling in BP by performing the polarization-selective resonance Raman measurement in the visible and ultraviolet regimes, focusing on the out-of-plane Ag1 and in-plane Ag2 phonon modes. Their intrinsic resonance Raman excitation profiles (REPs) were extracted and quantitatively compared. The in-plane Ag2 mode exhibits remarkably strong resonance enhancement across the excitation wavelengths when the excitation polarization is parallel to the armchair (Ag2//AC) direction. In contrast, a dramatically weak resonance effect was observed for the same mode with the polarization parallel to zigzag (Ag2//ZZ) direction and for the out-of-plane Ag1 mode (Ag1//AC and Ag1//ZZ). Analysis on quantum perturbation theory and first-principles calculations on the anisotropic electron distributions in BP demonstrated that electron-phonon coupling considering the symmetry of the involved excited states and phonon vibration patterns is responsible for this phenomenon. Further analysis of the polarization-dependent REPs for Ag phonons allows us to resolve the existing controversies on the physical origin of Raman anomaly in BP and its dependence on excitation energy, sample thickness, phonon modes, and crystalline orientation. Our study gives deep insights into the underlying interplay between electrons and phonons in BP and paves the way for manipulating the electron-phonon coupling in anisotropic nanomaterials for future device applications.

Topological Protection Can Arise from Thermal Fluctuations and Interactions.

Topological quantum and classical materials can exhibit robust properties that are protected against disorder, for example, for noninteracting particles and linear waves. Here, we demonstrate how to construct topologically protected states that arise from the combination of strong interactions and thermal fluctuations inherent to soft materials or miniaturized mechanical structures. Specifically, we consider fluctuating lines under tension (e.g., polymer or vortex lines), subject to a class of spatially modulated substrate potentials. At equilibrium, the lines acquire a collective tilt proportional to an integer topological invariant called the Chern number. This quantized tilt is robust against substrate disorder, as verified by classical Langevin dynamics simulations. This robustness arises because excitations in this system of thermally fluctuating lines are gapped by virtue of interline interactions. We establish the topological underpinning of this pattern via a mapping that we develop between the interacting-lines system and a hitherto unexplored generalization of Thouless pumping to imaginary time. Our work points to a new class of classical topological phenomena in which the topological signature manifests itself in a structural property observed at finite temperature rather than a transport measurement.

The renaissance of black phosphorus.

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion.

Although the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect--a coupling phenomenon between electrons and nonequilibrium phonons--in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to ∼ 0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.

Bottom-up Design of Three-Dimensional Carbon-Honeycomb with Superb Specific Strength and High Thermal Conductivity.

Low-dimensional carbon allotropes, from fullerenes, carbon nanotubes, to graphene, have been broadly explored due to their outstanding and special properties. However, there exist significant challenges in retaining such properties of basic building blocks when scaling them up to three-dimensional materials and structures for many technological applications. Here we show theoretically the atomistic structure of a stable three-dimensional carbon honeycomb (C-honeycomb) structure with superb mechanical and thermal properties. A combination of sp2 bonding in the wall and sp3 bonding in the triple junction of C-honeycomb is the key to retain the stability of C-honeycomb. The specific strength could be the best in structural carbon materials, and this strength remains at a high level but tunable with different cell sizes. C-honeycomb is also found to have a very high thermal conductivity, for example, >100 W/mK along the axis of the hexagonal cell with a density only ∼0.4 g/cm3. Because of the low density and high thermal conductivity, the specific thermal conductivity of C-honeycombs is larger than most engineering materials, including metals and high thermal conductivity semiconductors, as well as lightweight CNT arrays and graphene-based nanocomposites. Such high specific strength, high thermal conductivity, and anomalous Poisson's effect in C-honeycomb render it appealing for the use in various engineering practices.

Tailoring Superconductivity with Quantum Dislocations.

Despite the established knowledge that crystal dislocations can affect a material's superconducting properties, the exact mechanism of the electron-dislocation interaction in a dislocated superconductor has long been missing. Being a type of defect, dislocations are expected to decrease a material's superconducting transition temperature (Tc) by breaking the coherence. Yet experimentally, even in isotropic type I superconductors, dislocations can either decrease, increase, or have little influence on Tc. These experimental findings have yet to be understood. Although the anisotropic pairing in dirty superconductors has explained impurity-induced Tc reduction, no quantitative agreement has been reached in the case a dislocation given its complexity. In this study, by generalizing the one-dimensional quantized dislocation field to three dimensions, we reveal that there are indeed two distinct types of electron-dislocation interactions. Besides the usual electron-dislocation potential scattering, there is another interaction driving an effective attraction between electrons that is caused by dislons, which are quantized modes of a dislocation. The role of dislocations to superconductivity is thus clarified as the competition between the classical and quantum effects, showing excellent agreement with existing experimental data. In particular, the existence of both classical and quantum effects provides a plausible explanation for the illusive origin of dislocation-induced superconductivity in semiconducting PbS/PbTe superlattice nanostructures. A quantitative criterion has been derived, in which a dislocated superconductor with low elastic moduli and small electron effective mass and in a confined environment is inclined to enhance Tc. This provides a new pathway for engineering a material's superconducting properties by using dislocations as an additional degree of freedom.

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter.

Single layer graphene is an ideal material for the base layer of hot electron transistors (HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long mean free path maximizes the probability for ballistic transport across the base of the HET. We demonstrate for the first time the operation of a high-performance HET using a graphene/WSe2 van der Waals (vdW) heterostructure as a base-collector barrier. The resulting device with a GaN/AlN heterojunction as emitter, exhibits a current density of 50 A/cm2, direct current gain above 3 and 75% injection efficiency, which are record values among graphene-base HETs. These results not only provide a scheme to overcome the limitations of graphene-base HETs toward THz operation but are also the first demonstration of a GaN/vdW heterostructure in HETs, revealing the potential for novel electronic and optoelectronic applications.

Sensitive Phonon-Based Probe for Structure Identification of 1T' MoTe2.

In this work, by combining transmission electron microscopy and polarized Raman spectroscopy for the 1T' MoTe2 flakes with different thicknesses, we found that the polarization dependence of Raman intensity is given as a function of excitation laser wavelength, phonon symmetry, and phonon frequency, but has weak dependence on the flake thickness from few-layer to multilayer. In addition, the frequency of Raman peaks and the relative Raman intensity are sensitive to flake thickness, which manifests Raman spectroscopy as an effective probe for thickness of 1T' MoTe2. Our work demonstrates that polarized Raman spectroscopy is a powerful and nondestructive method to quickly identify the crystal structure and thickness of 1T' MoTe2 simultaneously, which opens up opportunities for the in situ probe of anisotropic properties and broad applications of this novel material.

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application.

This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe2 stacked on multilayer MoS2. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS2/WSe2 heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V(-1). Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS2/WSe2 heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy-band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.

Enhanced Thermionic-Dominated Photoresponse in Graphene Schottky Junctions.

Vertical heterostructures of van der Waals materials enable new pathways to tune charge and energy transport characteristics in nanoscale systems. We propose that graphene Schottky junctions can host a special kind of photoresponse that is characterized by strongly coupled heat and charge flows that run vertically out of the graphene plane. This regime can be accessed when vertical energy transport mediated by thermionic emission of hot carriers overwhelms electron-lattice cooling as well as lateral diffusive energy transport. As such, the power pumped into the system is efficiently extracted across the entire graphene active area via thermionic emission of hot carriers into a semiconductor material. Experimental signatures of this regime include a large and tunable internal responsivity [Formula: see text] with a nonmonotonic temperature dependence. In particular, [Formula: see text] peaks at electronic temperatures on the order of the Schottky barrier potential ϕ and has a large upper limit [Formula: see text] (e/ϕ = 10 A/W when ϕ = 100 meV). Our proposal opens up new approaches for engineering the photoresponse in optically active graphene heterostructures.

Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS2.

van der Waals homo- and heterostructures assembled by stamping monolayers together present optoelectronic properties suitable for diverse applications. Understanding the details of the interlayer stacking and resulting coupling is crucial for tuning these properties. We investigated the low-frequency interlayer shear and breathing Raman modes (<50 cm(-1)) in twisted bilayer MoS2 by Raman spectroscopy and first-principles modeling. Twisting significantly alters the interlayer stacking and coupling, leading to notable frequency and intensity changes of low-frequency modes. The frequency variation can be up to 8 cm(-1) and the intensity can vary by a factor of ∼5 for twisting angles near 0° and 60°, where the stacking is a mixture of high-symmetry stacking patterns and is thus sensitive to twisting. For twisting angles between 20° and 40°, the interlayer coupling is nearly constant because the stacking results in mismatched lattices over the entire sample. It follows that the Raman signature is relatively uniform. Note that for some samples, multiple breathing mode peaks appear, indicating nonuniform coupling across the interface. In contrast to the low-frequency interlayer modes, high-frequency intralayer Raman modes are much less sensitive to interlayer stacking and coupling. This research demonstrates the effectiveness of low-frequency Raman modes for probing the interfacial coupling and environment of twisted bilayer MoS2 and potentially other two-dimensional materials and heterostructures.

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus.

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect of anisotropy has remained unsatisfactory to date, as shown by a number of inconsistencies in the recent literature. We use angle-resolved absorption and Raman spectroscopies to investigate the role of anisotropy on the electron-photon and electron-phonon interactions in BP. We highlight, both experimentally and theoretically, a nontrivial dependence between anisotropy and flake thickness and photon and phonon energies. We show that once understood, the anisotropic optical absorption appears to be a reliable and simple way to identify the crystalline orientation of BP, which cannot be determined from Raman spectroscopy without the explicit consideration of excitation wavelength and flake thickness, as commonly used previously.

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached the sub-10 nm scale due to the multiple challenges related to nanofabrication at this length scale and the high contact resistance traditionally observed in MoS2 transistors. Here, using the semiconducting-to-metallic phase transition of MoS2, we demonstrate sub-10 nm channel-length transistor fabrication by directed self-assembly patterning of mono- and trilayer MoS2. This is done in a 7.5 nm half-pitch periodic chain of transistors where semiconducting (2H) MoS2 channel regions are seamlessly connected to metallic-phase (1T') MoS2 access and contact regions. The resulting 7.5 nm channel-length MoS2 FET has a low off-current of 10 pA/µm, an on/off current ratio of >107, and a subthreshold swing of 120 mV/dec. The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS2 for future sub-10 nm technology nodes.

Ultrasmall Mode Volumes in Plasmonic Cavities of Nanoparticle-On-Mirror Structures.

The mode volume and Purcell factor are two important parameters to assess the performance of optical nanocavities. Achieving small mode volumes and high Purcell factors for nanocavity structures while simplifying their fabrication has been a major task to realize high-performance and large-scale photonic devices and systems. Different optical resonators based on nanoparticle-on-mirror (NPoM) structures are systematically analyzed, which are easy to fabricate and flexible to use. Direct comparison of these optical resonators is made through finite-difference time-domain (FDTD) simulations. The achievement of ultrasmall mode volumes below 10-7 (λ/n)3 based on the NPoM structure through FDTD simulations is demonstrated by rationally selecting the structural parameters. Such NPoM structures provide a decent Purcell factor on the order of 107 , which can effectively enhance spontaneous emission and facilitate a number of photonic applications. The simulation results are confirmed by dark field scattering and second-harmonic generation measurements. This work is scientifically important and offers practical guidelines for the design of optical resonators for state-of-the-art optical and photonic devices.

Raman spectroscopy and in situ Raman spectroelectrochemistry of isotopically engineered graphene systems.

CONSPECTUS: The special properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset that extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, that is, doping, represents a viable way of shifting the Fermi level. In particular, electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in situ Raman spectroscopy, that is, in situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy not only can readily monitor the changes in the doping level but also can give information on eventual stress or disorder in the material. However, when Raman spectroscopy is employed, one of its main strengths lies in the utilization of isotope engineering during the chemical vapor deposition (CVD) growth of the graphene samples. The in situ Raman spectroelectrochemical study of multilayered systems with smartly designed isotope compositions in individual layers can provide a plethora of knowledge about the mutual interactions (i) between the graphene layers themselves, (ii) between graphene layers and their directly adjacent environment (e.g., substrate or electrolyte), and (iii) between graphene layers and their extended environment, which is separated from the layer by a certain number of additional graphene layers. In this Account, we show a few examples of such studies, from monolayer to two-layer and three-layer specimens and considering both turbostratic and AB interlayer ordering. Furthermore, the concept and the method can be extended further beyond the three-layer systems, for example, to heterostructures containing other 2-D materials beyond graphene. Despite a great deal of important results being unraveled so far through the in situ spectroelectrochemistry of graphene based systems, many intriguing challenges still lie immediately ahead. For example, apart from the aforementioned 2-D heterostructures, a substantial effort should be put into a more detailed exploration of misoriented (twisted) bilayer or trilayer graphenes. Marching from the oriented, AB-stacked to AA-stacked, bilayers, every single angular increment of the twist between the layers creates a new system in terms of its electronic properties. Mapping those properties and interlayer interactions dependent on the twist angle represents a sizable task, yet the reward might be the path toward the realization of various types of advanced devices. And last but not least, understanding the electrochemistry of graphene paves the way toward a controlled and targeted functionalization of graphene through redox reactions, especially when equipped with the possibility of an instantaneous monitoring of the thus introduced changes to the electronic structure of the system.

Lighting up the Raman signal of molecules in the vicinity of graphene related materials.

Surface enhanced Raman scattering (SERS) is a popular technique to detect the molecules with high selectivity and sensitivity. It has been developed for 40 years, and many reviews have been published to summarize the progress in SERS. Nevertheless, how to make the SERS signals repeatable and quantitative and how to have deeper understanding of the chemical enhancement mechanism are two big challenges. A strategy to target these issues is to develop a Raman enhancement substrate that is flat and nonmetal to replace the conventional rough and metal SERS substrate. At the same time, the newly developed substrate should have a strong interaction with the adsorbate molecules to guarantee strong chemical enhancement. The flatness of the surface allows better control of the molecular distribution and configuration, while the nonmetal surface avoids disturbance of the electromagnetic mechanism. Recently, graphene and other two-dimensional (2D) materials, which have an ideal flat surface and strong chemical interaction with plenty of organic molecules, were developed to be used as Raman enhancement substrates, which can light up the Raman signals of the molecules, and these substrates were demonstrated to be a promising for microspecies or trace species detection. This effect was named "graphene enhanced Raman scattering (GERS)". The GERS technique offers significant advantages for studying molecular vibrations due to the ultraflat and chemically inert 2D surfaces, which are newly available, especially in developing a quantitative and repeatable signal enhancement technique, complementary to SERS. Moreover, GERS is a chemical mechanism dominated effect, which offers a valuable model to study the details of the chemical mechanism. In this Account, we summarize the systematic studies exploring the character of GERS. In addition, as a practical technique, the combination of GERS with a metal substrate incorporates the advantages from both conventional SERS and GERS. The introduction of graphene to the Raman enhancement substrate extended SERS applications in a more controllable and quantitative way. Looking to the future, we expect the combination of the SERS concept with the GERS technology to lead to the solution of some important issues in chemical dynamics and in biological processes monitoring.

Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.