Influence of environmental conditions and surface treatments on the photoluminescence properties of GaN nanowires and nanofins.

Due to their intrinsically large surface-to-volume ratio, nanowires and nanofins interact strongly with their environment. We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 °C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature. For oxygen, these characteristics are already observed for low concentrations of below 0.5% in nitrogen. While the photoluminescence intensity changes induced by oxygen occur independently of illumination, the influence of water is light-induced: it evolves within tens of seconds under ultraviolet light exposure and is heavily influenced by the nanostructure pre-treatment. In contrast to observations in dry atmospheres, water prevents a recovery of the photoluminescence intensity in the dark. Combined measurements of the electrical current through GaN nanofins and their photoluminescence intensity reveal the environmental influence on the interaction of non-radiative recombination processes and changes in the surface band bending of the nanostructures. Several investigated solvents show an enhancing effect on the PL intensity increase, peaking in c-hexane with a 26-fold increase after 6 min of light exposure. Stabilization of the PL intensity was achieved by a passivation of the GaN surface with GaxOy, and ZnO shells. Surprisingly, Al2O3coatings resulted in a highly instable PL intensity during the first minutes of illumination. Our findings reveal the high importance of controlled environmental conditions for the investigation of nanostructures, especially when aimed at their applications in the fields of environmental sensing, photo-catalysis and light-emitting diodes.

Surface-Anisotropic Janus Silicon Quantum Dots via Masking on 2D Silicon Nanosheets.

Surface-anisotropic nanoparticles represent a new class of materials that shows potential in a variety of applications, including self-assembly, microelectronics, and biology. Here, the first synthesis of surface-anisotropic silicon quantum dots (SiQDs), obtained through masking on 2D silicon nanosheets, is presented. SiQDs are deposited on the 2D substrate, thereby exposing only one side of the QDs, which is functionalized through well-established hydrosilylation procedures. The UV-sensitive masking substrate is removed through UV-irradiation, which simultaneously initiates the hydrosilylation of a second substrate, thereby introducing a second functional group to the other side of the now free-standing SiQDs. This renders surface-anisotropic SiQDs that have two different functional groups on either side of the particle. This method can be used to introduce a variety of functional groups including hydrophilic and hydrophobic substrates, while the unique optoelectronic properties of the SiQDs remain unaffected. The anisotropic morphology of the QDs is confirmed through the aggregation behavior of amphiphilic Janus SiQDs at the interface of water and hexane. Additionally, anisotropic SiQDs are used to produce the first controlled (sub)monolayer of SiQDs on a gold wafer.

Anapole Excitations in Oxygen-Vacancy-Rich TiO2-x Nanoresonators: Tuning the Absorption for Photocatalysis in the Visible Spectrum.

Research on optically resonant dielectric nanostructures has accelerated the development of photonic applications, driven by their ability to strongly confine light on the nanoscale. However, as dielectric resonators are typically operated below their band gap to minimize optical losses, the usage of dielectric nanoantenna concepts for absorption enhancement has largely remained unexplored. In this work, we realize engineered nanoantennas composed of photocatalytic dielectrics and demonstrate increased light-harvesting capabilities in otherwise weakly absorptive spectral regions. In particular, we employ anapole excitations, which are known for their strong light confinement, in nanodisks of oxygen-vacancy-rich TiO2-x, a prominent photocatalyst that provides a powerful platform for exploring concepts in absorption enhancement in tunable nanostructures. The arising photocatalytic effect is monitored on the single particle level using the well-established photocatalytic silver reduction reaction on TiO2. With the freedom of changing the optical properties of TiO2 through tuning the abundance of VO states, we discuss the interplay between cavity damping and the anapole-assisted field confinement for absorption enhancement. This concept is general and can be extended to other catalytic materials with higher refractive indices.

Photo-induced selective etching of GaN nanowires in water.

Nanowire (NW) based devices for solar driven artificial photosynthesis have gained increasing interest in recent years due to the intrinsically high surface to volume ratio and the excellent achievable crystal qualities. However, catalytically active surfaces often suffer from insufficient stability under operational conditions. To gain a fundamental understanding of the underlying processes, the photochemical etching behavior of hexagonal and round GaN NWs in deionized water under illumination are investigated. We find that the crystallographic c-plane remains stable, whereas the m-planes are photochemically etched with rates up to 11 nm min-1, depending on the applied UV light intensity. By investigating nanowalls, we achieve control of the exposed crystallographic facets and find an enhanced stability of the a-plane compared to the m-plane. Photo-excited holes, which drift to the side facets due to the upward surface band bending in nominally n-type (not intentionally doped) GaN, are identified as the driving force of the process, which allows the development of concepts for the stabilization of the nanostructures. A geometrically enhanced absorption of periodic NW arrays is correlated with a dependence of the etch rate on the NW pitch and diameter. Further, we find selective photochemical etching of the NW base in the presence of sub-band gap illumination, which is attributed to defect-related absorption in this region. These results provide improved understanding of the roles of inhomogeneous defect distribution, light excitation profiles, and different surface facets on the photochemical stability of nanostructures and provide viable strategies for improving stabilities under light-driven reaction conditions.