Detalhe da pesquisa
1.
Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma.
Nanotechnology
; 35(27)2024 Apr 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-38522102
2.
Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane.
Nanotechnology
; 32(7): 075706, 2021 Feb 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-32942270