Heterogeneous integration of spin-photon interfaces with a CMOS platform.

Colour centres in diamond have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria1 and recently achieving quantum advantage in secret key distribution2. Blueprint studies3-5 indicate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logical qubits, presenting an open scalability challenge. Here we introduce a modular quantum system-on-chip (QSoC) architecture that integrates thousands of individually addressable tin-vacancy spin qubits in two-dimensional arrays of quantum microchiplets into an application-specific integrated circuit designed for cryogenic control. We demonstrate crucial fabrication steps and architectural subcomponents, including QSoC transfer by means of a 'lock-and-release' method for large-scale heterogeneous integration, high-throughput spin-qubit calibration and spectral tuning, and efficient spin state preparation and measurement. This QSoC architecture supports full connectivity for quantum memory arrays by spectral tuning across spin-photon frequency channels. Design studies building on these measurements indicate further scaling potential by means of increased qubit density, larger QSoC active regions and optical networking across QSoC modules.

Vacuum-sealed silicon photonic MEMS tunable ring resonator with an independent control over coupling and phase.

Ring resonators are a vital element for filters, optical delay lines, or sensors in silicon photonics. However, reconfigurable ring resonators with low-power consumption are not available in foundries today. We demonstrate an add-drop ring resonator with the independent tuning of round-trip phase and coupling using low-power microelectromechanical (MEMS) actuation. At a wavelength of 1540 nm and for a maximum voltage of 40 V, the phase shifters provide a resonance wavelength tuning of 0.15 nm, while the tunable couplers can tune the optical resonance extinction ratio at the through port from 0 to 30 dB. The optical resonance displays a passive quality factor of 29 000, which can be increased to almost 50 000 with actuation. The MEMS rings are individually vacuum-sealed on wafer scale, enabling reliable and long-term protection from the environment. We cycled the mechanical actuators for more than 4 × 109 cycles at 100 kHz, and did not observe degradation in their response curves. On mechanical resonance, we demonstrate a modulation increase of up to 15 dB, with a voltage bias of 4 V and a peak drive amplitude as low as 20 mV.

Silicon photonic microelectromechanical phase shifters for scalable programmable photonics.

Programmable photonic integrated circuits are emerging as an attractive platform for applications such as quantum information processing and artificial neural networks. However, current programmable circuits are limited in scalability by the lack of low-power and low-loss phase shifters in commercial foundries. Here, we demonstrate a compact phase shifter with low-power photonic microelectromechanical system (MEMS) actuation on a silicon photonics foundry platform (IMEC's iSiPP50G). The device attains (2.9π±π) phase shift at 1550 nm, with an insertion loss of (0.33-0.10+0.15)dB, a Vπ of (10.7-1.4+2.2)V, and an Lπ of (17.2-4.3+8.8)µm. We also measured an actuation bandwidth f-3dB of 1.03 MHz in air. We believe that our demonstration of a low-loss and low-power photonic MEMS phase shifter implemented in silicon photonics foundry compatible technology lifts a main roadblock toward the scale-up of programmable photonic integrated circuits.

Low-power optical beam steering by microelectromechanical waveguide gratings.

Optical beam steering is key for optical communications, laser mapping (lidar), and medical imaging. For these applications, integrated photonics is an enabling technology that can provide miniaturized, lighter, lower-cost, and more power-efficient systems. However, common integrated photonic devices are too power demanding. Here, we experimentally demonstrate, for the first time, to the best of our knowledge, beam steering by microelectromechanical (MEMS) actuation of a suspended silicon photonic waveguide grating. Our device shows up to 5.6° beam steering with 20 V actuation and power consumption below the µW level, i.e., more than five orders of magnitude lower power consumption than previous thermo-optic tuning methods. The novel combination of MEMS with integrated photonics presented in this work lays ground for the next generation of power-efficient optical beam steering systems.

Suspended polarization beam splitter on silicon-on-insulator.

Polarization handling in suspended silicon photonics has the potential to enable new applications in fields such as optomechanics, photonic microelectromechanical systems, and mid-infrared photonics. In this work, we experimentally demonstrate a suspended polarization beam splitter on a silicon-on-insulator waveguide platform, based on an asymmetric directional coupler. Our device presents polarization extinction ratios above 10 and 15 dB, and insertion losses below 5 and 1 dB, for TM and TE polarized input, respectively, across a 40 nm wavelength range at 1550 nm, with a device length below 8 µm. These results make our suspended polarization beam splitter a promising building block for future systems based on polarization diversity suspended photonics.

Low-power microelectromechanically tunable silicon photonic ring resonator add-drop filter.

We experimentally demonstrate a microelectromechanically (MEMS) tunable photonic ring resonator add-drop filter, fabricated in a simple silicon-on-insulator (SOI) based process. The device uses electrostatic parallel plate actuation to perturb the evanescent field of a silicon waveguide, and achieves a 530 pm resonance wavelength tuning, i.e., more than a fourfold improvement compared to previous MEMS tunable ring resonator add-drop filters. Moreover, our device has a static power consumption below 100 nW, and a tuning rate of -62 pm/V, i.e., the highest reported rate for electrostatic tuning of ring resonator add-drop filters.

Cavity-enhanced single artificial atoms in silicon.

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

Tunable quantum emitters on large-scale foundry silicon photonics.

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.

Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

Integration of microfluidics with grating coupled silicon photonic sensors by one-step combined photopatterning and molding of OSTE.

We present a novel integration method for packaging silicon photonic sensors with polymer microfluidics, designed to be suitable for wafer-level production methods. The method addresses the previously unmet manufacturing challenges of matching the microfluidic footprint area to that of the photonics, and of robust bonding of microfluidic layers to biofunctionalized surfaces. We demonstrate the fabrication, in a single step, of a microfluidic layer in the recently introduced OSTE polymer, and the subsequent unassisted dry bonding of the microfluidic layer to a grating coupled silicon photonic ring resonator sensor chip. The microfluidic layer features photopatterned through holes (vias) for optical fiber probing and fluid connections, as well as molded microchannels and tube connectors, and is manufactured and subsequently bonded to a silicon sensor chip in less than 10 minutes. Combining this new microfluidic packaging method with photonic waveguide surface gratings for light coupling allows matching the size scale of microfluidics to that of current silicon photonic biosensors. To demonstrate the new method, we performed successful refractive index measurements of liquid ethanol and methanol samples, using the fabricated device. The minimum required sample volume for refractive index measurement is below one nanoliter.

Individually addressable and spectrally programmable artificial atoms in silicon photonics.

A central goal for quantum technologies is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related G-center, exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator photonics. We demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a silicon-on-insulator photonic integrated circuit platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with narrow inhomogeneous distribution with standard deviation of 1.1 nm, excited state lifetime of 8.3 ± 0.7 ns, and no degradation after over a month of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile spectral programming enables alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated photonics.

Three-dimensional printing of silica glass with sub-micrometer resolution.

Silica glass is a high-performance material used in many applications such as lenses, glassware, and fibers. However, modern additive manufacturing of micro-scale silica glass structures requires sintering of 3D-printed silica-nanoparticle-loaded composites at ~1200 °C, which causes substantial structural shrinkage and limits the choice of substrate materials. Here, 3D printing of solid silica glass with sub-micrometer resolution is demonstrated without the need of a sintering step. This is achieved by locally crosslinking hydrogen silsesquioxane to silica glass using nonlinear absorption of sub-picosecond laser pulses. The as-printed glass is optically transparent but shows a high ratio of 4-membered silicon-oxygen rings and photoluminescence. Optional annealing at 900 °C makes the glass indistinguishable from fused silica. The utility of the approach is demonstrated by 3D printing an optical microtoroid resonator, a luminescence source, and a suspended plate on an optical-fiber tip. This approach enables promising applications in fields such as photonics, medicine, and quantum-optics.

Integrated silicon photonic MEMS.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces. However, silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption, which are substantial impediments for very large-scale integration in silicon photonics. Microelectromechanical systems (MEMS) technology can enhance silicon photonics with building blocks that are compact, low-loss, broadband, fast and require very low power consumption. Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, with wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fibre-array attachment for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements, including power couplers, phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications, neuromorphic computing, sensing, programmable photonics, and quantum computing.

Reconfigurable photonics with on-chip single-photon detectors.

Integrated quantum photonics offers a promising path to scale up quantum optics experiments by miniaturizing and stabilizing complex laboratory setups. Central elements of quantum integrated photonics are quantum emitters, memories, detectors, and reconfigurable photonic circuits. In particular, integrated detectors not only offer optical readout but, when interfaced with reconfigurable circuits, allow feedback and adaptive control, crucial for deterministic quantum teleportation, training of neural networks, and stabilization of complex circuits. However, the heat generated by thermally reconfigurable photonics is incompatible with heat-sensitive superconducting single-photon detectors, and thus their on-chip co-integration remains elusive. Here we show low-power microelectromechanical reconfiguration of integrated photonic circuits interfaced with superconducting single-photon detectors on the same chip. We demonstrate three key functionalities for photonic quantum technologies: 28 dB high-extinction routing of classical and quantum light, 90 dB high-dynamic range single-photon detection, and stabilization of optical excitation over 12 dB power variation. Our platform enables heat-load free reconfigurable linear optics and adaptive control, critical for quantum state preparation and quantum logic in large-scale quantum photonics applications.

Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters.

Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g(2)(0) = 0.150 ± 0.093 and perform on-chip resonant excitation, yielding a g(2)(0) = 0.377 ± 0.081. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.