Perturbation of the electron transport mechanism by proton intercalation in nanoporous TiO2 films.

This study addresses a long-standing controversy about the electron-transport mechanism in porous metal oxide semiconductor films that are commonly used in dye-sensitized solar cells and related systems. We investigated, by temperature-dependent time-of-flight measurements, the influence of proton intercalation on the electron-transport properties of nanoporous TiO(2) films exposed to an ethanol electrolyte containing different percentages of water (0-10%). These measurements revealed that increasing the water content in the electrolyte led to increased proton intercalation into the TiO(2) films, slower transport, and a dramatic change in the dependence of the thermal activation energy (E(a)) of the electron diffusion coefficient on the photogenerated electron density in the films. Random walk simulations based on a microscopic model incorporating exponential conduction band tail (CBT) trap states combined with a proton-induced shallow trap level with a long residence time accounted for the observed effects of proton intercalation on E(a). Application of this model to the experimental results explains the conditions under which E(a) dependence on the photoelectron density is consistent with multiple trapping in exponential CBT states and under which it appears at variance with this model.

Surface Chemistry Exchange of Alloyed Germanium Nanocrystals: A Pathway Toward Conductive Group IV Nanocrystal Films.

We present an expansion of the mixed-valence iodide reduction method for the synthesis of Ge nanocrystals (NCs) to incorporate low levels (∼1 mol %) of groups III, IV, and V elements to yield main-group element-alloyed Ge NCs (Ge1-xEx NCs). Nearly every main-group element (E) that surrounds Ge on the periodic table (Al, P, Ga, As, In, Sn, and Sb) may be incorporated into Ge1-xEx NCs with remarkably high E incorporation into the product (>45% of E added to the reaction). Importantly, surface chemistry modification via ligand exchange allowed conductive films of Ge1-xEx NCs to be prepared, which exhibit conductivities over large distances (25 µm) relevant to optoelectronic device development of group IV NC thin films.