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Integrated third-harmonic generators enable on-chip wavelength conversion translating telecom signals to the visible spectrum. Despite the desirable functionality, the device performance is susceptible to phase distortions. Here, we present a design method of compensating the Kerr-induced distortions in third-harmonic generation. The design method yields a chirped Bragg grating theoretically improving the conversion efficiency by â¼30 dB. We envision the design method will pave the way for demonstrating efficient infrared-to-visible upconversion in silicon nitride chips.
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The quantum theory of optical coherence plays a ubiquitous role in identifying optical emitters. An unequivocal identification, however, presumes that the photon number statistics is resolved from timing uncertainties. We demonstrate from first principle that the observed nth-order temporal coherence is a n-fold convolution of the instrument responses and the expected coherence. The consequence is detrimental in which the photon number statistics is masked from the unresolved coherence signatures. The experimental investigations are thus far consistent with the theory developed. We envision the present theory will mitigate the false identification of optical emitters and enlarge the coherence deconvolution to an arbitrary order.
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This study proposes a novel technique for a 2D beam steering system using hybrid plasmonic phase shifters with a cylindrical configuration in a 2D periodic array suitable for LIDAR applications. A nanoscale VCSEP design facilitates a sub-wavelength spacing between individual phase shifters, yielding an expanded field of view and side lobes suppression. The proposed design includes a highly doped sub-micron silicon pillar covered by a thin layer of nonlinear material and an additional conductive metal layer. Characterization of a single VCSEP demonstrated a Free Spectral Range (FSR) of 53.28 ± 2.5â nm and a transmission variation of 3â dB, with VπL equal to 0.075â V-mm.
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The design, fabrication, and characterization of a 16-element optical phased array (OPA) using a high index (n = 3.1) silicon-rich silicon nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over a wide steering range of >115° at a fixed wavelength of 1525â nm. A beam width of 6.3° has been measured at boresight, consistent with theory. We demonstrate SRN as a viable material choice for chip-scale OPA applications due to its high thermo-optic coefficient, high optical power handling capacity [negligible two-photon absorption (TPA)], wide transparency window, and CMOS compatibility.
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In 1929, only three years after the advent of quantum mechanics, von Neumann and Wigner showed that Schrödinger's equation can have bound states above the continuum threshold. These peculiar states, called bound states in the continuum (BICs), manifest themselves as resonances that do not decay. For several decades afterwards the idea lay dormant, regarded primarily as a mathematical curiosity. In 1977, Herrick and Stillinger revived interest in BICs when they suggested that BICs could be observed in semiconductor superlattices. BICs arise naturally from Feshbach's quantum mechanical theory of resonances, as explained by Friedrich and Wintgen, and are thus more physical than initially realized. Recently, it was realized that BICs are intrinsically a wave phenomenon and are thus not restricted to the realm of quantum mechanics. They have since been shown to occur in many different fields of wave physics including acoustics, microwaves and nanophotonics. However, experimental observations of BICs have been limited to passive systems and the realization of BIC lasers has remained elusive. Here we report, at room temperature, lasing action from an optically pumped BIC cavity. Our results show that the lasing wavelength of the fabricated BIC cavities, each made of an array of cylindrical nanoresonators suspended in air, scales with the radii of the nanoresonators according to the theoretical prediction for the BIC mode. Moreover, lasing action from the designed BIC cavity persists even after scaling down the array to as few as 8-by-8 nanoresonators. BIC lasers open up new avenues in the study of light-matter interaction because they are intrinsically connected to topological charges and represent natural vector beam sources (that is, there are several possible beam shapes), which are highly sought after in the fields of optical trapping, biological sensing and quantum information.
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We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10-4/°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching.
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Bragg-grating based cavities and coupler designs present opportunities for flexible allocation of bandwidth and spectrum in silicon photonic devices. Integrated silicon photonic devices are moving toward mainstream, mass adoption, leading to the need for compact Bragg grating based designs. In this work we present a design and experimental validation of a cascaded contra-directional Bragg-grating coupler with a measured main lobe to side-lobe contrast of 12.93â dB. This level of performance is achieved in a more compact size as compared to conventional apodized gratings, and a similar design philosophy can be used to improve side-lobe reduction in grating-based mirror design for on-chip lasers and other cavity-based designs as well.
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In this paper, we experimentally demonstrate a broadband Archimedes spiral delay line with high packing density on a silicon photonic platform. This high density is achieved by optimizing the gap between the adjacent waveguides (down to sub-micron scale) in the spiral configuration. However, care must be taken to avoid evanescent coupling, the presence of which will cause the spiral to behave as a novel type of distributed spiral resonator. To this end, an analytical model of the resonance phenomenon was developed for a simple spiral. Moreover, it is demonstrated that this distributed spiral resonator effect can be minimized by ensuring that adjacent waveguides in the spiral configuration have different propagation constants (ß). Experimental validations were accomplished by fabricating and testing multiple spiral waveguides with varying lengths (i.e., 0.4, 0.8, and 1.4 mm) and separation gaps (i.e., 300 and 150 nm). Finally, a Linear Density Figure of Merit (LDFM) is introduced to evaluate the packing efficiency of various spiral designs in the literature. In this work, the optimum experimental design with mitigated resonance had a length of 1.4mm and occupied an area of 60 × 60µm, corresponding to an LDFM of 388km-1.
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3D imaging is essential for the study and analysis of a wide variety of structures in numerous applications. Coherent photonic systems such as optical coherence tomography (OCT) and light detection and ranging (LiDAR) are state-of-the-art approaches, and their current implementation can operate in regimes that range from under a few millimeters to over more than a kilometer. We introduce a general method, which we call universal photonics tomography (UPT), for analyzing coherent tomography systems, in which conventional methods such as OCT and LiDAR may be viewed as special cases. We demonstrate a novel approach (to our knowledge) based on the use of phase modulation combined with multirate signal processing to collect positional information of objects beyond the Nyquist limits.
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There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC's from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10-5K-1 for silicon nitride and (5.67 ± 0.53) · 10-6K-1 for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments.
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We introduce and experimentally demonstrate a miniaturized integrated spectrometer operating over a broad bandwidth in the short-wavelength infrared (SWIR) spectrum that combines an add-drop ring resonator narrow band filter with a distributed Bragg reflector (DBR) based broadband filter realized in a silicon photonic platform. The contra-directional coupling DBR filter in this design consists of a pair of waveguide sidewall gratings that act as a broadband filter (i.e., 3.9 nm). The re-directed beam is then fed into the ring resonator which functions as a narrowband filter (i.e., 0.121 nm). In this scheme the free spectral range (FSR) limitation of the ring resonator is overcome by using the DBR as a filter to isolate a single ring resonance line. The overall design of the spectrometer is further simplified by simultaneously tuning both components through the thermo-optic effect. Moreover, several ring-grating spectrometer cells with different central wavelengths can be stacked in cascade in order to cover a broader spectrum bandwidth. This can be done by centering each unit cell on a different center wavelength such that the maximum range of one-unit cell corresponds to the minimum range of the next unit cell. This configuration enables high spectral resolution over a large spectral bandwidth and high extinction ratio (ER), making it suitable for a wide variety of applications.
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The design, fabrication, and characterization of low-loss ultra-compact bends in high-index (n=3.1 at λ=1550nm) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of 65×65µm2, having a total active waveguide length of 1.2 mm. The device featured a phase-shifting efficiency of 8mW/π and a 3 dB switching bandwidth of 15 KHz. We propose SRN as a promising thermo-optic platform that combines the properties of silicon and stoichiometric silicon nitride.
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We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, χ(3), as high as (6±0.58)×10-19m2/V2. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a χ(3) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.
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We experimentally demonstrate bridge-coupled metallo-dielectric nanolasers that can operate in the in-phase or out-of-phase locking modes at room temperature. By varying the length of the bridge, we show that the coupling coefficients can be realized in support of the stable operation of any of these two modes. Both coupled nanolaser designs have been fabricated and characterized for experimental validation. Their lasing behavior has been confirmed by the spectral evolution, light-in light-out characterizations, and emission linewidth narrowing. The operating mode is identified from the near-field and far-field emission pattern measurements. To the best of our knowledge, this is the first demonstration of mode selection in bridge-coupled metallo-dielectric nanolasers, which can serve as building blocks in nanolaser arrays for applications in imaging, virtual reality devices, and lidars.
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We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10-4 K-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
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We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of â¼-18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.
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To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to â¼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstrate in-situ dynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser's emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of â¼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.
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Current silicon waveguide Bragg gratings typically introduce perturbation to the optical mode in the form of modulation of the waveguide width or cladding. However, since such a perturbation approach is limited to weak perturbations to avoid intolerable scattering loss and higher-order modal coupling, it is difficult to produce ultra-wide stopbands. In this Letter, we report an ultra-compact Bragg grating device with strong perturbations by etching nanoholes in the waveguide core to enable an ultra-large stopband with apodization achieved by proper location of the nanoholes. With this approach, a 15 µm long device can generate a stopband as wide as 110 nm that covers the entire ${\rm C} + {\rm L}$C+L band with a 40 dB extinction ratio and over a 10 dB sidelobe suppression ratio (SSR). Similar structures can be further optimized to achieve higher SSR of $ \gt {17}\;{\rm dB}$>17dB for a stopband of about 80 nm.
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Two coupled nanolasers exhibit a mode switching transition, theoretically described by mode beating limit cycle oscillations. Their decay rate is vanishingly small in the thermodynamic limit, i.e., when the spontaneous emission noise tends to zero. We provide experimental statistical evidence of mesoscopic limit cycles (â¼10^{3} intracavity photons). Specifically, we show that the order parameter quantifying the limit cycle amplitude can be reconstructed from the mode intensity statistics. We observe a maximum of the averaged amplitude at the mode switching, accounting for limit cycle oscillations. We finally relate this maximum to a dip of mode cross-correlations, reaching a minimum of g_{ij}^{(2)}=2/3, which we show to be a mesoscopic limit. Coupled nanolasers are thus an appealing test bed for the investigation of spontaneous breaking of time translation symmetry in the presence of strong quantum fluctuations.
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We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.