All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe.

The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of ∼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of ∼0.2 W and a conversion efficiency of ∼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.

Realizing High Thermoelectric Properties in Bi2S3 Bulk via Band Engineering and Nanorods Compositing.

Bismuth sulfide is a promising thermoelectric material because of its low cost and toxicity; however, its low electrical conductivity limits its thermoelectric properties. In this study, Bi2S3+x wt% HfCl4 (x = 0, 0.25, 0.5, 0.75, and 1.0) bulk samples are fabricated using a combination of melting and spark plasma sintering. The microstructures, electronic structures, and thermoelectric properties of the composites are characterized. The results of electronic structure calculations show that doping with HfCl4 produces an impurity energy level that narrows the bandgap and allows the Fermi energy level to enter the conduction band, leading to a favorable increase in carrier concentration. By regulating the HfCl4 doping concentration, the electrical conductivity of the 0.75 wt% doped sample reaches 253 Scm-1 at 423 K and its maximum ZT value is 0.47 at 673 K. Moreover, the sample is compounded with Bi2S3 nanorods prepared by the hydrothermal method, reducing thermal conductivity by 30% due to the introduction of additional interfaces and pores. This resulted in a final ZT value of 0.61 at 673 K, which is approximately eight times higher than that of pure Bi2S3. This step-by-step optimization approach provides a valuable methodology for enhancing the performance of other thermoelectric material systems.

High Carrier Mobility and Promising Thermoelectric Module Performance of N-Type PbSe Crystals.

The scarcity of Te hampers the widespread use of Bi2Te3-based thermoelectric modules. Here, the thermoelectric module potential of PbSe is investigated by improving its carrier mobility. Initially, large PbSe crystals are grown with the temperature gradient method to mitigate grain boundary effects on carrier transport. Subsequently, light doping with <1mole‰ halogens (Cl/Br/I) increases room-temperature carrier mobility to ~1600 cm2 V-1 s-1, achieved by reducing carrier concentration compared to traditional heavy doping. Crystal growth design and light doping enhance carrier mobility without affecting effective mass, resulting in a high power factor ~40 µW cm-1 K-2 in PbSe-Cl/Br/I crystals at 300 K. Additionally, Cl/Br/I doping reduces thermal conductivity and bipolar diffusion, leading to significantly lower thermal conductivity at high temperature. Enhanced carrier mobility and suppressed bipolar effect boost ZT values across the entire temperature range in n-type PbSe-Cl/Br/I crystals. Specifically, ZT values of PbSe-Br crystal reach ~0.6 at 300 K, ~1.2 at 773 K, and the average ZT (ZTave) reaches ~1.0 at 300-773 K. Ultimately, ~5.8% power generation efficiency in a PbSe single leg with a maximum temperature cooling difference of 40 K with 7-pair modules is achieved. These results indicate the potential for cost-effective and high-performance thermoelectric cooling modules based on PbSe.

Large Mobility Enables Higher Thermoelectric Cooling and Power Generation Performance in n-type AgPb18+xSbTe20 Crystals.

The room-temperature thermoelectric performance of materials underpins their thermoelectric cooling ability. Carrier mobility plays a significant role in the electronic transport property of materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using a vertical Bridgman method. A large weighted mobility of ∼410 cm2 V-1 s-1 is achieved in the AgPb18.4SbTe20 crystal, which is almost 4 times higher than that of the polycrystalline counterpart due to the elimination of grain boundaries and Ag-rich dislocations verified by atom probe tomography, highlighting the significant benefit of growing crystals for low-temperature thermoelectrics. Due to the largely promoted weighted mobility, we achieve a high power factor of ∼37.8 µW cm-1 K-2 and a large figure of merit ZT of ∼0.6 in AgPb18.4SbTe20 crystal at 303 K. We further designed a 7-pair thermoelectric module using this n-type crystal and a commercial p-type (Bi, Sb)2Te3-based material. As a result, a high cooling temperature difference (ΔT) of ∼42.7 K and a power generation efficiency of ∼3.7% are achieved, revealing promising thermoelectric applications for PbTe-based materials near room temperature.

All Cubic-Phase δ-TAGS Thermoelectrics Over the Entire Mid-Temperature Range.

GeTe-based pseudo-binary (GeTe)x (AgSbTe2 )100- x (TAGS-x) is recognized as a promising p-type mid-temperature thermoelectric material with outstanding thermoelectric performance; nevertheless, its intrinsic structural transition and metastable microstructure (due to Ag/Sb/Ge localization) restrict the long-time application of TAGS-x in practical thermoelectric devices. In this work, a series of non-stoichiometric (GeTe)x (Ag1- δ Sb1+ δ Te2+ δ )100- x (x = 85∼50; δ = ≈0.20-0.23), referred to as δ-TAGS-x, with all cubic phase over the entire testing temperature range (300-773 K), is synthesized. Through optimization of crystal symmetry and microstructure, a state-of-the-art ZTmax of 1.86 at 673 K and average ZTavg of 1.43 at ≈323-773 K are realized in δ-TAGS-75 (δ = 0.21), which is the highest value among all reported cubic-phase GeTe-based thermoelectric systems so far. As compared with stoichiometric TAGS-x, the remarkable thermoelectric achieved in cubic δ-TAGS-x can be attributed to the alleviation of highly (electrical and thermal) resistive grain boundary Ag8 GeTe6 phase. Moreover, δ-TAGS-x exhibits much better mechanical properties than stoichiometric TAGS-x, together with the outstanding thermoelectric performance, leading to a robust single-leg thermoelectric module with ηmax of ≈10.2% and Pmax of ≈0.191 W. The finding in this work indicates the great application potential of non-stoichiometric δ-TAGS-x in the field of mid-temperature waste heat harvesting.

Breaking the Minimum Limit of Thermal Conductivity of Mg3 Sb2 Thermoelectric Mediated by Chemical Alloying Induced Lattice Instability.

Thermal properties strongly affect the applications of functional materials, such as thermal management, thermal barrier coatings, and thermoelectrics. Thermoelectric (TE) materials must have a low lattice thermal conductivity to maintain a temperature gradient to generate the voltage. Traditional strategies for minimizing the lattice thermal conductivity mainly rely on introduced multiscale defects to suppress the propagation of phonons. Here, the origin of the anomalously low lattice thermal conductivity is uncovered in Cd-alloyed Mg3 Sb2 Zintl compounds through complementary bonding analysis. First, the weakened chemical bonds and the lattice instability induced by the antibonding states of 5p-4d levels between Sb and Cd triggered giant anharmonicity and consequently increased the phonon scattering. Moreover, the bond heterogeneity also augmented Umklapp phonon scatterings. Second, the weakened bonds and heavy element alloying softened the phonon mode and significantly decreased the group velocity. Thus, an ultralow lattice thermal conductivity of ≈0.33 W m-1 K-1 at 773 K is obtained, which is even lower than the predicated minimum value. Eventually, Na0.01 Mg1.7 Cd1.25 Sb2 displays a high ZT of ≈0.76 at 773 K, competitive with most of the reported values. Based on the complementary bonding analysis, the work provides new means to control thermal transport properties through balancing the lattice stability and instability.

Bi0.33(Bi6S9)Br compositing in Bi2S3 bulk materials forwards high thermoelectric properties.

The hexagonal Bi0.33(Bi6S9)Br intermediate was incorporated to enhance the thermoelectric properties of Bi2S3 by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi2S3 + 5% Bi0.33(Bi6S9)Br. This study provides a strategy for achieving Br doping in the Bi2S3 system by adding the Bi0.33(Bi6S9)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.

Achievement of Excellent Thermoelectric Properties in Cu-Se-S Compounds via In Situ Phase Separation.

In this study, Cu2Se1-xSx (x = 0.1, 0.3, and 0.5) alloy powders were prepared by the hydrothermal synthesis method. In the subsequent sintering process, the spontaneous in situ phase separation process of the sample forms a two-phase hybrid structure. The generated Cu2S precipitates in the Cu2Se matrix noticeably enhance phonon scattering, which is beneficial for low thermal conductivity without significantly affecting the electrical transport performance. Ultimately, an optimized thermoelectric performance was obtained in Cu2Se0.9S0.1, reaching a peak zT value of 1.43 at 773 K, the optimum value among the Cu-Se-S systems at this temperature.

Ternary Ag2Se1-xTex: A Near-Room-Temperature Thermoelectric Material with a Potentially High Figure of Merit.

Discovering high-performance near-room-temperature thermoelectric materials is extremely imperative to widen the practical application in thermoelectric power generation and refrigeration. Here, ternary Ag2Se1-xTex (x = 0.1, 0.2, 0.3, 0.4, and 0.5) materials are prepared via the wet-mechanical alloying and spark plasma sintering process to investigate their near-room-temperature thermoelectric properties. From density functional theory calculation and single-parabolic-band modeling study, we found that the reduced contribution of Se 4p orbitals to the total density of states decreases the carrier effective mass with increasing Te content, which should enhance the theoretically maximum zT. These calculation results are also verified by the experimental results. Meanwhile, complex microstructures including dislocations, nanograins, high-density boundaries, TeSe substitution, lattice distortions, and localized strain have been observed in ternary Ag2Se1-xTex. These complex microstructures strengthen phonon scattering and in turn lead to ultralow lattice thermal conductivity in the range of 0.21-0.31 W m-1 K-1 in ternary Ag2Se1-xTex at 300 K. Although the increased deformation potential suppresses the carrier mobility, benefiting from the engineered band structures and ultralow lattice thermal conductivity, a high zT of >1 can be potentially obtained in the ternary Ag2Se1-xTex with appropriate carrier concentration. This study indicates that ternary Ag2Se1-xTex is a promising candidate for near-room-temperature thermoelectric applications.

Electrochemiluminescence sensor based on cyclic peptides-recognition and Au nanoparticles assisted graphitic carbon nitride for glucose determination.

A glucose (Glu) sensor was designed by introducing synthetic cyclic peptides (CPs) as recognition receptors and Au nanoparticles assisted graphitic carbon nitride (AuNPs/g-C3N4) for electrochemiluminescence (ECL) enhancement. The synthetic CP receptor (cyclo-[-CNDNHCRDNDC-]) with natural active center of Glu binding protein can mimic the interactions between Glu and Glu binding protein to specifically capture Glu. The AuNPs were reduced on g-C3N4 and formed a new nanohybrid that can be applied as an ECL emitter. The AuNPs/g-C3N4 effectively ameliorated the ECL response of bare g-C3N4. The ECL enhancement mechanism was theoretically speculated through computer simulation. Glu quantification was conducted by recording ECL shifts induced by the binding of Glu to CPs. The linear detection range of the fabricated CPs-based ECL sensor was 1 to 100 mmol L-1, and the detection limit (LOD) was 0.57 nmol L-1 (S / N = 3). The CP-based ECL sensor also showed good specificity, repeatability, stability, and favorable recoveries in sample analysis. This work offer a promising analytical method for Glu assay in clinical diagnostics and bioprocess monitoring.

Achieving high thermoelectric performance of Cu1.8S composites with WSe2 nanoparticles.

Polycrystalline p-type Cu1.8S composites with WSe2 nanoparticles were fabricated by the mechanical alloying method combined with the spark plasma sintering technique. The Seebeck coefficient was significantly enhanced by the optimized carrier concentration, while the thermal conductivity was simultaneously decreased due to the refined grain and WSe2 nanoparticles. An enhanced Seebeck coefficient of 110 µV K-1 and a reduced thermal conductivity of 0.68 W m-1 K-1 were obtained for the Cu1.8S + 1 wt% WSe2 sample at 773 K, resulting in a remarkably enhanced peak ZT of 1.22 at 773 K, which is 2.5 times higher than that (0.49 at 773 K) of a pristine Cu1.8S sample. The cheap and environmentally friendly Cu1.8S-based materials with enhanced properties may find promising applications in thermoelectric devices.

Boosting the Thermoelectric Performance of (Na,K)-Codoped Polycrystalline SnSe by Synergistic Tailoring of the Band Structure and Atomic-Scale Defect Phonon Scattering.

We report the high thermoelectric performance of p-type polycrystalline SnSe obtained by the synergistic tailoring of band structures and atomic-scale defect phonon scattering through (Na,K)-codoping. The energy offsets of multiple valence bands in SnSe are decreased after Na doping and further reduced by (Na,K)-codoping, resulting in an enhancement in the Seebeck coefficient and an increase in the power factor to 492 µW m-1 K-2. The lattice thermal conductivity of polycrystalline SnSe is decreased by the introduction of effective phonon scattering centers, such as point defects and antiphase boundaries. The lattice thermal conductivity of the material is reduced to values as low as 0.29 W m-1 K-1 at 773 K, whereas ZT is increased from 0.3 for 1% Na-doped SnSe to 1.2 for 1% (Na,K)-codoped SnSe.

Hydrothermal synthesis of SnQ (Q = Te, Se, S) and their thermoelectric properties.

Lead-free IV-VI semiconductors SnQ (Q = Te, Se, S) are deemed as promising thermoelectric (TE) materials. In this work, we designed a hydrothermal route to selectively synthesize single phase SnTe, SnSe and SnS nanopowders. For all three samples, the phase structure were characterized by x-ray diffraction, SnTe particles with octahedron structure and SnSe/SnS particles with plate-like shape were observed by field emission scanning electron microscopy and transmission electron microscopy, the formation mechanism was discussed in detail. Then, SnTe, SnSe and SnS nanopowders were densified by spark plasma sintering for investigating TE properties. It was noticed that SnSe and SnS exhibited remarkably anisotropy in both electrical and thermal properties attributed to the layered crystal structure. The highest ZT values 0.79 at 873 K, 0.21 at 773 K, and 0.13 at 773 K were achieved for SnTe, SnSe and SnS bulk samples, respectively.

Enhanced thermoelectric properties of SnSe polycrystals via texture control.

We present in this manuscript that enhanced thermoelectric performance can be achieved in polycrystalline SnSe prepared by hydrothermal reaction and spark plasma sintering (SPS). X-ray diffraction (XRD) patterns revealed strong orientation along the [l 0 0] direction in bulk samples, which was further confirmed by microstructural observation through transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM). It was noticed that the texturing degree of bulk samples could be controlled by sintering temperature during the SPS process. The best electrical transport properties were found in the sample which sintered at 450 °C in the direction vertical to the pressing direction, where the highest texturing degree and mass density were achieved. Coupled with the relatively low thermal conductivity, an average ZT of ∼ 0.38, the highest ever reported in pristine polycrystalline SnSe was obtained. This work set up a forceful example that a texture-control approach can be utilized to enhance the thermoelectric performance effectively.

Selective synthesis of Cu2SnSe3 and Cu2SnSe4 nanocrystals.

The selective synthesis of Cu2SnSe3 and Cu2SnSe4 nanocrystals was achieved by a one-step solvothermal synthesis method. We also investigated the effects of different precursor sources and starting material concentrations on the phase purity of the products. Powder X-ray diffraction, elemental analysis, and magnetic susceptibility measurements were used to investigate the phase, purity, and homogeneity of the nanocrystals. This solvothermal approach is broadly applicable and may also be employed for the synthesis of other ternary or quaternary chalcogenide nanocrystals.

Introducing gradient Er ions and oxygen defects into SrCoO3 for regulating structural, electrical and magnetic transport properties.

The SrCoO3-δ system has broad application potential due to its diverse crystal structures, oxidation stoichiometric ratio, and significant electrical and magnetic properties. However, it faces the challenges of a complex crystal structure and oxygen defect control in this material system. Herein, we introduce oxygen defects into SrCoO3-δvia Er doping to regulate the structural, electrical and magnetic transport properties. Sr1-xErxCoO3-δ (x = 0-0.25) undergoes an evolution of structure and oxygen content (measured using the iodometric method) from hexagonal SrCoO2.626 (H + Co3O4) to cubic perovskite Sr0.9Er0.1CoO2.689 (CP) and finally to ordered tetragonal Sr0.8Er0.2CoO2.635 (OT). Among the three phases, Sr0.9Er0.1CoO2.689 (CP) exhibits the lowest resistivity, only 4.06 mΩ cm at room temperature, which is attributed to its high three-dimensional symmetry, overlap of O 2p and Co 3d orbitals at high oxygen ion concentration. Further introduction of Er ions and oxygen defects promotes the transformation from low spin Co4+ (LS, t52ge0g, S = 1/2) to high spin Co3+ (HS, t42ge2g, S = 2), and from the CoO6 octahedron (low magnetic moment transformation) to the CoO4.25 tetrahedron (high magnetic moment). The oxygen-deficient CoO4.25 layer appears, which can enhance the ordering of A sites and oxygen vacancies, and the CP phase transforms into room-temperature ferromagnetic Sr0.8Er0.2CoO2.635 (OT, TC∼330 K). Er ions provide unpaired electrons in the 2f orbital, which results in a strong magnetization of Sr0.8Er0.2CoO2.635 (OT, 4.66 µB/Co) at low temperatures.

Synergistically Optimized Thermoelectric and Mechanical Properties of Mg3.2Bi1.5Sb0.5-SiC Composites.

Motivated by the surging demand for low-temperature waste heat harvesting, materials with both prominent thermoelectric and good mechanical properties are preferred in practical applications. In this present work, the composite exploration of Te-doped Mg3.2Bi1.5Sb0.5-x vol % nanosized SiC (x = 0, 0.05, 0.1, 0.2, and 0.5) was carried out, where nanosized SiC is physically dispersed in the matrix in the form of a second phase. SiC second phase compositing further optimized the matrix carrier concentration, resulting in a higher power factor in the service temperature range (the highest value from 28.9 to 31.7 µW cm-1 K-2), and the (ZT)ave from 0.91 to 0.96 compared with the matrix sample. In addition, the SiC second phase effectively enhanced the mechanical properties of composite materials, including flexural strength, microhardness, and modulus. Because of the simultaneous optimization of thermoelectric and mechanical properties, the overall performance of Te-doped Mg3.2Bi1.5Sb0.5-0.05 vol % SiC composite is leveraged to meet special requirements of power generation. It is expected that the addition of SiC should be broadly applicable to address the physical performance in other thermoelectric systems.

High Thermoelectric Performance of n-type BiTeSe-Based Composites Incorporated with Both Inorganic and Organic Nanoinclusions.

N-type Bi2Te2.7Se0.3 (BTS) alloy has relatively low thermoelectric performance as compared to its p-type counterpart, which restricts its widespread applications. Herein, we designed and prepared a novel composite system, which consists of an n-type BTS matrix incorporated with both inorganic and organic nanoinclusions. The results indicate that the thermopower of the composite samples can be enhanced by more than 19% upon incorporating inorganic nanophase AgBi3S5 (ABS) due to the energy-dependent carrier scattering, which ensures a high power factor. On the other hand, further incorporation of organic nanophase polypyrrole (PPy) can drastically reduce its lattice thermal conductivity owing to the strong scattering of mid- and low-frequency phonons at these nanoinclusions. As a result, high figures of merit ZTmax = 1.3 at 348 K and ZTave = 1.17 (300-500 K) are achieved with improved mechanical properties in BTS-based composites incorporated with 1.5 wt % ABS and 0.5 wt % PPy, demonstrating that the incorporation of both inorganic and organic nanoinclusions is an effective way to improve its thermoelectric performance.

Synergetic enhancement of CsPbI3 nanorod-based high-performance photodetectors via PbSe quantum dot interface engineering.

The advancement of optoelectronic applications relies heavily on the development of high-performance photodetectors that are self-driven and capable of detecting a wide range of wavelengths. CsPbI3 nanorods (NRs), known for their outstanding optical and electrical properties, offer direct bandgap characteristics, high absorption coefficients, and long carrier diffusion lengths. However, challenges such as stability and limited photoluminescence quantum yield have impeded their widespread application. By integrating PbSe colloidal quantum dots (CQDs) with CsPbI3 NRs, the hybrid nanomaterial harnesses the benefits of each component, resulting in enhanced optoelectronic properties and device performance. In this work, a self-powered and broadband photodetector, ITO/ZnO/CsPbI3:PbSe/CuSCN/Au, is fabricated, in which CsPbI3 NRs are decorated with PbSe QDs as the photoactive layer, ZnO as the electron-transporting layer and CuSCN as the hole-transporting layer. The device performance is further improved through the incorporation of Cs2CO3 into the ZnO layer, resulting in an enhancement of its overall operational characteristics. As a result, a notable responsivity of 9.29 A W-1 and a specific detectivity of 3.17 × 1014 Jones were achieved. Certainly, the TCAD simulations closely correlate with our experimental data, facilitating a comprehensive exploration of the fundamental physical mechanisms responsible for the improved performance of these surface-passivated heterojunction photodetectors. This opens up exciting possibilities for substantial advancements in the realm of next-generation optoelectronic devices.

Enhancing the performance of PbS:CsPbBr3 bulk-heterojunction photodetectors by treating with imidazolium-based ionic liquids.

All-inorganic lead halide perovskites and quantum dots (QDs) have gained significant attention since their emergence, owing to their immense potential for applications in optoelectronic devices. Here, enhanced-performance broadband photodetectors based on the bulk-heterostructure of a CsPbBr3 perovskite and PbS colloidal quantum dots (CQDs) are presented, and 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4) ionic liquids as a dual-purpose additive were introduced in the blended film to regulate the surface of QDs by facilitating surface passivation, adjusting energy levels, and coupling with longer alkyl chains as compared to iodide ions (I-). As a result, a superior-quality bulk-heterostructure based photodetector with long-term stability was obtained, showing outstanding performance in photodetection across the visible to near-infrared wavelength range, demonstrating a high photoresponsivity of 22.4 A W-1 with a response time of 16.2 ms and a specific detectivity of 1.58 × 1014 Jones under 405 nm illumination. Thus, this work provides a novel modification strategy for PbS:CsPbBr3 as a promising material for novel optoelectronics.