Optically induced ultrafast magnetization switching in ferromagnetic spin valves.

The discovery of spin-transfer torque (STT) enabled the control of the magnetization direction in magnetic devices in nanoseconds using an electrical current. Ultrashort optical pulses have also been used to manipulate the magnetization of ferrimagnets at picosecond timescales by bringing the system out of equilibrium. So far, these methods of magnetization manipulation have mostly been developed independently within the fields of spintronics and ultrafast magnetism. Here we show optically induced ultrafast magnetization reversal taking place within less than a picosecond in rare-earth-free archetypal spin valves of [Pt/Co]/Cu/[Co/Pt] commonly used for current-induced STT switching. We find that the magnetization of the free layer can be switched from a parallel to an antiparallel alignment, as in STT, indicating the presence of an unexpected, intense and ultrafast source of opposite angular momentum in our structures. Our findings provide a route to ultrafast magnetization control by bridging concepts from spintronics and ultrafast magnetism.

Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials.

Since it was recently demonstrated in a spin-valve structure, magnetization reversal of a ferromagnetic layer using a single ultrashort optical pulse has attracted attention for future ultrafast and energy-efficient magnetic storage or memory devices. However, the mechanism and the role of the magnetic properties of the ferromagnet as well as the time scale of the magnetization switching are not understood. Here, we investigate single-shot all-optical magnetization switching in a GdFeCo/Cu/[CoxNi1-x/Pt] spin-valve structure. We demonstrate that the threshold fluence for switching both the GdFeCo and the ferromagnetic layer depends on the laser pulse duration and the thickness and the Curie temperature of the ferromagnetic layer. We are able to explain most of the experimental results using a phenomenological model. This work provides a way to engineer ferromagnetic materials for energy efficient single-shot all-optical magnetization switching.

Influence of Nonuniform Micron-Scale Strain Distributions on the Electrical Reorientation of Magnetic Microstructures in a Composite Multiferroic Heterostructure.

Composite multiferroic systems, consisting of a piezoelectric substrate coupled with a ferromagnetic thin film, are of great interest from a technological point of view because they offer a path toward the development of ultralow power magnetoelectric devices. The key aspect of those systems is the possibility to control magnetization via an electric field, relying on the magneto-elastic coupling at the interface between the piezoelectric and the ferromagnetic components. Accordingly, a direct measurement of both the electrically induced magnetic behavior and of the piezo-strain driving such behavior is crucial for better understanding and further developing these materials systems. In this work, we measure and characterize the micron-scale strain and magnetic response, as a function of an applied electric field, in a composite multiferroic system composed of 1 and 2 µm squares of Ni fabricated on a prepoled [Pb(Mg1/3Nb2/3)O3]0.69-[PbTiO3]0.31 (PMN-PT) single crystal substrate by X-ray microdiffraction and X-ray photoemission electron microscopy, respectively. These two complementary measurements of the same area on the sample indicate the presence of a nonuniform strain which strongly influences the reorientation of the magnetic state within identical Ni microstructures along the surface of the sample. Micromagnetic simulations confirm these experimental observations. This study emphasizes the critical importance of surface and interface engineering on the micron-scale in composite multiferroic structures and introduces a robust method to characterize future devices on these length scales.

Picosecond spin-orbit torque-induced coherent magnetization switching in a ferromagnet.

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

Accelerating ultrafast magnetization reversal by non-local spin transfer.

When exciting a magnetic material with a femtosecond laser pulse, the amplitude of magnetization is no longer constant and can decrease within a time scale comparable to the duration of the optical excitation. This ultrafast demagnetization can even trigger an ultrafast, out of equilibrium, phase transition to a paramagnetic state. The reciprocal effect, namely an ultrafast remagnetization from the zero magnetization state, is a necessary ingredient to achieve a complete ultrafast reversal. However, the speed of remagnetization is limited by the universal critical slowing down which appears close to a phase transition. Here we demonstrate that magnetization can be reversed in a few hundreds of femtoseconds by overcoming the critical slowing down thanks to ultrafast spin cooling and spin heating mechanisms. We foresee that these results outline the potential of ultrafast spintronics for future ultrafast and energy efficient magnetic memory and storage devices. Furthermore, this should motivate further theoretical works in the field of femtosecond magnetization reversal.

Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet.

New methods to induce magnetization switching in a thin ferromagnetic material using femtosecond laser pulses without the assistance of an applied external magnetic field have recently attracted a lot of interest. It has been shown that by optically triggering the reversal of the magnetization in a GdFeCo layer, the magnetization of a nearby ferromagnetic thin film can also be reversed via spin currents originating in the GdFeCo layer. Here, using a similar structure, it is shown that the magnetization reversal of the GdFeCo is not required in order to reverse the magnetization of the ferromagnetic thin film. This switching is attributed to the ultrafast spin current and can be generated by the GdFeCo demagnetization. A larger energy efficiency of the ferromagnetic layer single pulse switching is obtained for a GdFeCo with a larger Gd concentration. Those ultrafast and energy efficient switchings observed in such spintronic devices open a new path toward ultrafast and energy efficient magnetic memories.

Engineering Co2 MnAlx Si1- x Heusler Compounds as a Model System to Correlate Spin Polarization, Intrinsic Gilbert Damping, and Ultrafast Demagnetization.

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co2 MnAlx Si1- x Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10-3 for Co2 MnAl with 63% spin polarization to an ultralow value of 4.6 × 10-4 for the half-metallic ferromagnet Co2 MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 - P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.

Single-Shot Multi-Level All-Optical Magnetization Switching Mediated by Spin Transport.

All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is explored for future ultrafast and energy-efficient magnetic storage and memories. It is shown that femtosecond (fs) light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here, the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt]/Cu/GdFeCo) is demonstrated and four possible magnetic configurations of the spin valve can be accessed using a sequence of single fs light pulses. The experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized currents generated by the light pulse interactions with the GdFeCo layer. This work provides an approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.

Ultrafast magnetization reversal by picosecond electrical pulses.

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. We unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub-10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electrical switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm)3 cell. This discovery introduces a new field of research into ultrafast charge current-driven spintronic phenomena and devices.