RESUMO
Temperature coefficients for maximum power (T PCE), open circuit voltage (V OC), and short circuit current (J SC) are standard specifications included in data sheets for any commercially available photovoltaic module. To date, there has been little work on determining the T PCE for perovskite photovoltaics (PV). We fabricate perovskite solar cells with a T PCE of -0.08 rel %/°C and then disentangle the temperature-dependent effects of the perovskite absorber, contact layers, and interfaces by comparing different device architectures and using drift-diffusion modeling. A main factor contributing to the small T PCE of perovskites is their low intrinsic carrier concentrations with respect to Si and GaAs, which can be explained by its wider band gap. We demonstrate that the unique increase in E g with increasing temperatures seen for perovskites results in a reduction in J SC but positively influences V OC. The current limiting factors for the T PCE in perovskite PV are identified to originate from interfacial effects.