RESUMO
The use of ternary additives in organic photovoltaics is a promising route for improving overall device performance. Silicon phthalocyanines (SiPcs) are ideal candidates due to their absorption profile, low cost, and ease of synthesis and chemical tunability. However, to date, only a few examples have been reported and specific strategies for aiding in the design of improved ternary additives have not been established. In this study, we report a relationship between ternary additive solubility and device performance, demonstrating that device performance is maximized when the SiPc additive solubility is similar to that of the donor polymer (P3HT, in this case). This improved performance can be attributed to the favored interfacial precipitation of the SiPc when its solubility matches that of the other components of the thin film. The power conversion efficiency (PCE) varied from 2.4% to 3.4% by using axially substituted SiPcs with different solubilities, where the best ternary additive led to a 25% increase in PCE compared to that of the baseline device.
RESUMO
Organic photovoltaics (OPVs) have experienced continued interest over the last 25â years as a viable technology for the generation of power. Phthalocyanines are among the oldest commercial dyes and have been utilized in some of the earliest examples of OPVs. In recent years, the use of boron subphthalocyanines (BsubPcs) and silicon phthalocyanines (SiPcs) has attracted a flurry of interest with some examples of fullerene-free devices reaching power conversion efficiencies >8 %. Unlike other more common divalent phthalocyanines such as copper or zinc, BsubPcs and SiPcs contain additional axial groups that can easily be functionalized without significantly affecting the optoelectronic properties of the macrocycle. This handle facilitates our ability to tune the solid-state arrangement and other physical characteristics such as solubility ultimately giving us the ability to improve the thin film processing and final device performance. This review covers recent studies on the development of BsubPcs and SiPcs for use as active materials in organic photovoltaics.
RESUMO
Efficient synthesis of silicon phthalocyanines (SiPc) eliminating the strenuous reaction conditions and hazardous reagents required by classical methods is described. Implementation into organic thin-film transistors (OTFTs) affords average electron field-effect mobility of 3.1 × 10-3 cm2 V-1 s-1 and threshold voltage of 25.6 V for all synthetic routes. These results demonstrate that our novel chemistry can lead to high performing SiPc-based n-type OTFTs.
RESUMO
To avoid the use of hydrofluoric acid, a series of fluorinated trivalent and tetravalent metal-containing phthalocyanines (MPcs) were synthesized using a straightforward one-step halide substitution process using cesium fluoride (CsF) as the fluoride source and by reflux in N,N-dimethylformamide for less than an hour. The resulting fluoro MPcs were characterized and compared to the parent chloro MPcs. In some cases, very little change in properties was observed between the fluoro MPcs and the chloro MPcs. In other cases, such as fluoro aluminum phthalocyanine, a blue shift in the absorbance characteristics and an increase in oxidation and reduction potential of as much as 0.22 V was observed compared to the chloro derivative. Thermo gravimetric analysis was performed on all halo-MPcs, indicating that the choice of halo substitution on the axial position can have an effect on the decomposition or sublimation temperature of the final compound. After initial establishment and characterization of the fluoro MPcs, the halide substitution reaction of difluoro silicon phthalocyanine (F2-SiPc) was further explored by scaling the reaction up to a gram scale as well as considering tetrabutylammonium fluoride (TBAF) as an additional safe fluoride source. The scaled-up reactions producing F2-SiPc using CsF and TBAF as fluoride exchange sources were successfully reproducible, resulting in reaction yields of 100 and 73%, respectively. Both processes led to pure final products but results indicate that CsF, as the fluoride exchange reagent, appears to be the superior reaction process as it has a much higher yield.
RESUMO
Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.