Doping-Induced Enhancement of Hydrogen Evolution at MoS2 Electrodes.

Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2 with Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex where both hydrogen atoms are interacting with the surface. Stabilization of such a complex affects the competing Volmer-Heyrovsky (direct H2 release) and Volmer-Tafel (H2* intermediate) pathways. The resulting evolution proceeds with a very small overpotential for all dopants ( η ${\eta }$ =0.1 to 0.2 V) at 25 % edge substitution, significantly reduced from the already low η ${\eta }$ =0.27 V for the undoped edge. At full edge substitution, Co-MoS2 remains highly active ( η ${\eta }$ =0.18 V) while Ni- and Pt-MoS2 are deactivated ( η ${\eta }$ =0.4 to 0.5 V) due to unfavorable interaction with H2*. Instead of the single S-vacancy, the site of intrinsic activity in the basal plane was found to be the undercoordinated central Mo-atom in threefold S-vacancy configurations, enabling hydrogen evolution with η ${\eta }$ =0.52 V via a H2* intermediate. The impurity atoms interact favorably with the intrinsic sulfur vacancies on the basal plane, stabilizing but simultaneously deactivating the triple vacancy configuration. The calculated shifts in overpotential are consistent with reported measurements, and the dependence on doping level may explain variations in experimental observations.

Is the doped MoS2 basal plane an efficient hydrogen evolution catalyst? Calculations of voltage-dependent activation energy.

Transition metal dichalcogenides are cheap and earth-abundant candidates for the replacement of precious metals as catalyst materials. Experimental measurements of the hydrogen evolution reaction (HER), for example, have demonstrated significant electrocatalytic activity of MoS2 but there is large variation depending on the preparation method. In order to gain information about the mechanism and active sites for the HER, we have carried out calculations of the reaction and activation energy for HER at the transition metal doped basal plane of MoS2 under electrochemical conditions, i.e. including applied electrode potential and solvent effects. The calculations are based on identifying the relevant saddle points on the energy surface obtained from density functional theory within the generalized gradient approximation, and the information on energetics is used to construct voltage-dependent volcano plots. Doping with 3d-metal atoms as well as Pt is found to enhance hydrogen adsorption onto the basal plane by introducing electronic states within the band gap, and in some cases (Co, Ni, Cu, Pt) significant local symmetry breaking. The Volmer-Heyrovsky mechanism is found to be most likely and the associated energetics show considerable dopant and voltage-dependence. While the binding free energy of hydrogen can be tuned to be seemingly favorable for HER, the calculated activation energy turns out to be significant, at least 0.7 eV at a voltage of -0.5 V vs. SHE, indicating low catalytic activity of the doped basal plane. This suggests that other sites are responsible for the experimental activity, possibly edges or basal plane defects.

Sulfur-deficient edges as active sites for hydrogen evolution on MoS2.

A grand-canonical approach is employed to calculate the voltage-dependent activation energy and estimate the kinetics of the hydrogen evolution reaction (HER) on intrinsic sites of MoS2, including edges of varying S-coverage as well as S-vacancies on the basal plane. Certain edge configurations are found to be vastly more active than others, namely S-deficient edges on the Mo-termination where, in the fully S-depleted case, HER can proceed with activation energy below 0.5 eV at an electrode potential of 0 V vs. SHE. There is a clear distinction between the performance of Mo-rich and S-rich adsorption sites, as HER at the latter sites is characterized by large (generally above 1.5 eV) Heyrovsky and Tafel energy barriers despite near-thermoneutral hydrogen adsorption energy. Thus, exposing Mo-atoms on the edges to which hydrogen can directly bind is crucial for efficient hydrogen evolution. While S-vacancies on the basal plane do expose Mo-rich sites, the energy barriers are still significant due to high coordination of the Mo atoms. Kinetic modelling based on the voltage-dependent reaction energetics gives a theoretical overpotential of 0.25 V and 1.09 V for the Mo-edge with no S atoms and the weakly sulfur-deficient (2% S-vacancies) basal plane, respectively, with Volmer-Heyrovsky being the dominant pathway. These values coincide well with reported experimentally measured values of the overpotential for the edges and basal plane. For the partly Mo-exposed edges, the calculated overpotential is 0.6-0.7 V while edges with only S-sites give overpotential exceeding that of the basal plane. These results show that the overpotential systematically decreases with increased sulfur-deficiency and reduced Mo-coordination. The fundamental difference between Mo- and S-rich sites suggests that catalyst design of transition metal dichalcogenides should be focused on facilitating and modifying the metal sites, rather than activating the chalcogen sites.

Tilting and rotational motions of silver halide crystal with diffracted X-ray blinking.

The dynamic properties of crystalline materials are important for understanding their local environment or individual single-grain motions. A new time-resolved observation method is required for use in many fields of investigation. Here, we developed in situ diffracted X-ray blinking to monitor high-resolution diffraction patterns from single-crystal grains with a 50 ms time resolution. The diffraction spots of single grains of silver halides and silver moved in the θ and χ directions during the photolysis chemical reaction. The movements of the spots represent tilting and rotational motions. The time trajectory of the diffraction intensity reflecting those motions was analysed by using single-pixel autocorrelation function (sp-ACF). Single-pixel ACF analysis revealed significant differences in the distributions of the ACF decay constants between silver halides, suggesting that the motions of single grains are different between them. The rotational diffusion coefficients for silver halides were estimated to be accurate at the level of approximately 0.1 to 0.3 pm2/s. Furthermore, newly formed silver grains on silver halides correlated with their ACF decay constants. Our high-resolution atomic scale measurement-sp-ACF analysis of diffraction patterns of individual grains-is useful for evaluating physical properties that are broadly applicable in physics, chemistry, and materials science.