Time-dependent plasticity in silicon microbeams mediated by dislocation nucleation.

Understanding deformation mechanisms in silicon is critical for reliable design of miniaturized devices operating at high temperatures. Bulk silicon is brittle, but it becomes ductile at about 540 °C. It creeps (deforms plastically with time) at high temperatures (∼800 °C). However, the effect of small size on ductility and creep of silicon remains elusive. Here, we report that silicon at small scales may deform plastically with time at lower temperatures (400 °C) above a threshold stress. We achieve this stress by bending single-crystal silicon microbeams using an in situ thermomechanical testing stage. Small size, together with bending, localize high stress near the surface of the beam close to the anchor. This localization offers flaw tolerance, allowing ductility to win over fracture. Our combined scanning, transmission electron microscopy, and atomic force microscopy analysis reveals that as the threshold stress is approached, multiple dislocation nucleation sites appear simultaneously from the high-stressed surface of the beam with a uniform spacing of about 200 nm between them. Dislocations then emanate from these sites with time, lowering the stress while bending the beam plastically. This process continues until the effective shear stress drops and dislocation activities stop. A simple mechanistic model is presented to relate dislocation nucleation with plasticity in silicon.

How photocorrosion can trick you: a detailed study on low-bandgap Li doped CuO photocathodes for solar hydrogen production.

The efficiency of photoelectrochemical tandem cells is still limited by the availability of stable low band gap electrodes. In this work, we report a photocathode based on lithium doped copper(ii) oxide, a black p-type semiconductor. Density functional theory calculations with a Hubbard U term show that low concentrations of Li (Li0.03Cu0.97O) lead to an upward shift of the valence band maximum that crosses the Fermi level and results in a p-type semiconductor. Therefore, Li doping emerged as a suitable approach to manipulate the electronic structure of copper oxide based photocathodes. As this material class suffers from instability in water under operating conditions, the recorded photocurrents are repeatedly misinterpreted as hydrogen evolution evidence. We investigated the photocorrosion behavior of LixCu1-xO cathodes in detail and give the first mechanistic study of the fundamental physical process. The reduced copper oxide species were localized by electron energy loss spectroscopy mapping. Cu2O grows as distinct crystallites on the surface of LixCu1-xO instead of forming a dense layer. Additionally, there is no obvious Cu2O gradient inside the films, as Cu2O seems to form on all LixCu1-xO nanocrystals exposed to water. The application of a thin Ti0.8Nb0.2Ox coating by atomic layer deposition and the deposition of a platinum co-catalyst increased the stability of LixCu1-xO against decomposition. These devices showed a stable hydrogen evolution for 15 minutes.