Forward bias operation of silicon photonic Mach Zehnder modulators for RF applications.

In this paper, we demonstrate that forward bias (+0.9V) of a high-speed silicon (Si) optical Mach-Zehnder modulator (MZM) increases the radio-frequency (RF) link gain by 30 dB when compared to reverse bias operation (-8V). RF applications require tunable, narrowband electro-optic conversion with high gain to mitigate noise of the optical receiver and realize high RF spur-free dynamic range. Compared to reverse bias, the forward bias gain rolls off more rapidly but offers higher RF link gain improvement of more than 13.2 dB at 20 GHz. Furthermore, forward bias is shown to result in comparable spurious-free dynamic range (SFDR: 104.5 dB.Hz2/3). We demonstrate through an analytical dc transfer curve the existence of simultaneous high gain and OIP3 and verify the theoretical results with measurement under forward bias at a bias point of around +0.9 V.

On-chip wavelength locking for photonic switches.

We present an on-chip wavelength reference with a partial drop ring resonator and germanium photodetector. This approach can be used in ring-resonator-based wavelength-selective switches where absolute wavelength alignment is required. We use the temperature dependence of heater resistance as a temperature sensor. Additionally, we discuss locking speed, statistical variation of heater resistances, and tuning speed of the switches.