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1.
Nanotechnology ; 28(8): 085202, 2017 Feb 24.
Artigo em Inglês | MEDLINE | ID: mdl-28106009

RESUMO

The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies [Formula: see text] are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two regimes of quantum transport: (i) the Josephson regime, characterised by a dissipationless current up to ∼100 nA, and (ii) the quantum dot (QD) regime, characterised by the formation of Andreev bound states (ABS) associated with spontaneous QDs inside the nanowire channel. In regime (i), the behaviour of the critical current I c versus an axial magnetic field [Formula: see text] shows an unexpected modulation and persistence to fields [Formula: see text] T. In the QD regime, the ABS are modelled as the current-biased solutions of an Anderson-type model. The applicability of devices in both transport regimes to Majorana fermion experiments is discussed.

2.
Nanotechnology ; 24(22): 225202, 2013 Jun 07.
Artigo em Inglês | MEDLINE | ID: mdl-23633474

RESUMO

Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10 to 200 K. The mobility increases with temperatures below ∼30-50 K, and then decreases with temperatures above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data.

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