Regulating the Porosity and Iodine Adsorption Properties of Metal-Organic Framework Glass via an Ammonia-Immersion Approach.

Metal-organic framework (MOF) glass is a new type of glass material, but it usually lacks sufficient porosity. Thus, regulating the pore structure of MOF glass to improve its adsorption performance is very important. Herein, we found that the porosity of MOF glasses agZIF-62 and agZIF-76 can be regulated via an ammonia-immersion approach. After ammonia immersion, the resulting agZIF-62-NH3 and agZIF-76-NH3 could be maintained in their glass states or converted to their amorphous states, respectively. Their porosity changed according to the gas adsorption experiments. Notably, compared with agZIF-62 and agZIF-76, the iodine uptake capacities for agZIF-62-NH3 and agZIF-76NH3 increased by 12 and 21 times, respectively. This work shows that the subsequent treatment of MOF glass can regulate their adsorption performance.

[Techniques and methods evaluation on pharmaceutical stability of liposomes].

Liposomes as a drug carrier is easy to form aggregation and cause drug leakage in vitro. In addition, the degradation and elimination in vivo happens frequently to reduce its delivery activity. Development and application of liposomes are restricted by the instability. The appropriate techniques and methods are great important in the study of pharmaceutical stability of liposomes. In this paper, the techniques and methods are reviewed on pharmaceutical stability evaluation of liposomes, which was done from physical, chemical and biological stability for the difference in stability of liposomes. The research strategies for establishing the stability evaluation system and improving the value of liposomes have been discussed to make full therapeutic advantage of it.

2D Materials-Based Static Random-Access Memory.

2D transition-metal dichalcogenide semiconductors, such as MoS2 and WSe2 , with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)-based field-effect transistor (FET) and static random-access memory (SRAM) cells analyzing the impact of layer thickness reveals that the monolayer 2DM FET with superior electrostatics is beneficial for its ability to mitigate the read-write conflict in an SRAM cell at scaled technology nodes (1-2.1 nm). Moreover, the monolayer 2DM SRAM exhibits lower cell read access time and write time than the bilayer and trilayer 2DM SRAM cells at fixed leakage power. This simulation predicts that the optimization of 2DM SRAM designed with state-of-the-art contact resistance, mobility, and equivalent oxide thickness leads to excellent stability and operation speed at the 1-nm node. Applying the nanosheet (NS) gate-all-around (GAA) structure to 2DM further reduces cell read access time and write time and improves the area density of the SRAM cells, demonstrating a feasible scaling path beyond Si technology using 2DM NSFETs. In addition to the device design, the process challenges for 2DM NSFETs, including the cost-effective stacking of 2DM layers, formation of electrical contacts, suspended 2DM channels, and GAA structures, are also discussed.