Organic single crystals of charge-transfer complexes: model systems for the study of donor/acceptor interactions.

The charge-transfer (CT) state arising as a hybrid electronic state at the interface between charge donor and charge acceptor molecular units is important to a wide variety of physical processes in organic semiconductor devices. The exact nature of this state depends heavily on the nature and co-facial overlap between the donor and acceptor; however, altering this overlap is usually accompanied by extensive confounding variations in properties due to extrinsic factors, such as microstructure. As a consequence, establishing reliable relationships between donor/acceptor molecular structures, their molecular overlap, degree of charge transfer and physical properties, is challenging. Herein, we examine the electronic structure of a polymorphic system based on the donor dibenzotetrathiafulvalene (DBTTF) and the acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) in the form of high-quality single crystals varying in the donor-acceptor overlap. Using angle-resolved photoemission spectroscopy, we resolve the highest occupied molecular orbital states of the CT crystals. Analysis based on field-effect transistors allows us to probe the sub-gap states impacting hole and electron transport. Our results expand the understanding on the impact of donor and acceptor interactions on electronic structure and charge transport.

Importance of Electric-Field-Independent Mobilities in Thick-Film Organic Solar Cells.

In organic solar cells (OSCs), a thick active layer usually yields a higher photocurrent with broader optical absorption than a thin active layer. In fact, a ∼300 nm thick active layer is more compatible with large-area processing methods and theoretically should be a better spot for efficiency optimization. However, the bottleneck of developing high-efficiency thick-film OSCs is the loss in fill factor (FF). The origin of the FF loss is not clearly understood, and there a direct method to identify photoactive materials for high-efficiency thick-film OSCs is lacking. Here, we demonstrate that the mobility field-dependent coefficient is an important parameter directly determining the FF loss in thick-film OSCs. Simulation results based on the drift-diffusion model reveal that a mobility field-dependent coefficient smaller than 10-3 (V/cm)-1/2 is required to maintain a good FF in thick-film devices. To confirm our simulation results, we studied the performance of two ternary bulk heterojunction (BHJ) blends, PTQ10:N3:PC71BM and PM6:N3:PC71BM. We found that the PTQ10 blend film has weaker field-dependent mobilities, giving rise to a more balanced electron-hole transport at low fields. While both the PM6 blend and PTQ10 blend yield good performance in thin-film devices (∼100 nm), only the PTQ10 blend can retain a FF = 74% with an active layer thickness of up to 300 nm. Combining the benefits of a higher JSC in thick-film devices, we achieved a PCE of 16.8% in a 300 nm thick PTQ10:N3:PC71BM OSC. Such a high FF in the thick-film PTQ10 blend is also consistent with the observation of lower charge recombination from light-intensity-dependent measurements and lower energetic disorder observed in photothermal deflection spectroscopy.

Suppressing bias stress degradation in high performance solution processed organic transistors operating in air.

Solution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we designed the most efficient encapsulation strategy for each device type, which resulted in fabrication of high performance, environmentally and operationally stable small molecule and polymeric transistors with consistent mobility and unparalleled threshold voltage shifts as low as 0.1 V under the application of high bias stress in air.

Organic Field-Effect Transistors as Flexible, Tissue-Equivalent Radiation Dosimeters in Medical Applications.

Radiation therapy is one of the most prevalent procedures for cancer treatment, but the risks of malignancies induced by peripheral beam in healthy tissues surrounding the target is high. Therefore, being able to accurately measure the exposure dose is a critical aspect of patient care. Here a radiation detector based on an organic field-effect transistor (RAD-OFET) is introduced, an in vivo dosimeter that can be placed directly on a patient's skin to validate in real time the dose being delivered and ensure that for nearby regions an acceptable level of low dose is being received. This device reduces the errors faced by current technologies in approximating the dose profile in a patient's body, is sensitive for doses relevant to radiation treatment procedures, and robust when incorporated into conformal large-area electronics. A model is proposed to describe the operation of RAD-OFETs, based on the interplay between charge photogeneration and trapping.