Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes.

The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electrical dissimilarities in order to understand how the nanoscale phenomena observed in individual NWs affect the working performance of the whole array. The LED shows a low number of NWs (∼20%) producing electroluminescence under operating conditions. This is related to a presence of a potential barrier at the interface between the NW core and the radially grown n-doped layer, which differently affects the electrical properties of the NWs although they are morphologically identical. The impact of the potential barrier on the performance of the NW array is investigated by correlating multi-scanning techniques, namely electron beam induced current microscopy, electroluminescence mapping and cathodoluminescence analysis. It is found that the main cause of inhomogeneity in the array is related to a non-optimized charge injection into the active region, which can be overcome by changing the contact architecture so that the electrons become injected directly in the n-doped underlayer. The LED with so-called 'front-n-contacting' is developed leading to an increase of the yield of emitting NWs from 20% to 65%.

Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires.

We report on the structural and optical properties of GaAs0.7P0.3/GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW.

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene.

Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815°C ± 5°C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 °C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).

In situ passivation of GaAsP nanowires.

We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition energy was tuned to the optimal value required for tandem III-V/silicon solar cells. We discovered that an unintentional shell was also formed during the GaAsP NW growth. The NW surface was passivated by an in situ deposition of a radial Ga(As)P shell. Different shell compositions and thicknesses were investigated. We demonstrate that the optimal passivation conditions for GaAsP NWs (with a gap of 1.78 eV) are obtained with a 5 nm thick GaP shell. This passivation enhances the luminescence intensity of the NWs by 2 orders of magnitude and yields a longer luminescence decay. The luminescence dynamics changes from single exponential decay with a 4 ps characteristic time in non-passivated NWs to a bi-exponential decay with characteristic times of 85 and 540 ps in NWs with GaP shell passivation.

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core-shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of the graphene-contacted LED has been assessed by electron beam induced current microscopy. By comparing graphene-contacted and metal-contacted nanowire LEDs, we show that the contact layout determines the electroluminescence spectrum. The electroluminescence changes color from green to blue with increasing injection current. High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green peak arises from the In-rich region at the junction between the m-planes and the semipolar planes. The spectral behavior of the electroluminescence is understood by modeling the current distribution within the nanowire.

Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 µm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy.

We report a systematic experimental and theoretical investigation of core-shell InGaN/GaN single wire light-emitting diodes (LEDs) using electron beam induced current (EBIC) microscopy. The wires were grown by catalyst-free MOVPE and processed into single wire LEDs using electron beam lithography on dispersed wires. The influence of the acceleration voltage and of the applied bias on the EBIC maps was investigated. We show that the EBIC maps provide information both on the minority carrier effects (i.e. on the local p-n junction collection efficiency) and on the majority carrier effects (i.e. the transport efficiency from the excited region toward the contacts). Because of a finite core and shell resistance a non-negligible current redistribution into the p-n junction takes place during the majority carrier transport. A theoretical model for transport in a core-shell wire is developed, allowing to explain the dependence of the EBIC profiles on the experimental parameters (the electron beam acceleration voltage and the bias applied on the device) and on the structural parameters of the wire (core and shell resistance, shunt resistance, etc). Comparison between simulated and experimental profiles provides valuable information concerning the structure inhomogeneities and gives insight into the wire electrical parameters.

Optical properties of GaN-based nanowires containing a single Al(0.14)Ga(0.86)N/GaN quantum disc.

The optical properties of wurtzite GaN nanowires containing single Al0.14Ga0.86N/GaN quantum discs of different thickness have been investigated. The dependence of the photoluminescence (PL) transition energy on the quantum disc thickness and the thickness of a lateral AlGaN shell has been simulated in the framework of a three-dimensional effective mass model, accounting for the presence of a lateral AlGaN shell, strain state and the piezoelectric and spontaneous polarization. The predicted transition energies are in good agreement with the statistics realized on more than 40 single nanowire emission spectra and PL spectra of ensembles of nanowires. The emission spectra of the single quantum discs exhibit a Lorentzian shape with a homogeneous line width as low as 3 meV. Finally, we discuss the dependence of the interband transition energy on diameter.

Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.

The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation of the refractive index was deduced from the shift of the position of the beating interference maxima of different order modes in a guided wave configuration. The obtained index variation with bias from complete depletion to full population of the quantum wells is around -5 × 10(-3). This value is similar to the typical index variation achieved in InP and is an order of magnitude higher than the index variation obtained in silicon.

Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate.

We report on the growth and electro-optical studies of photovoltaic properties of GaAsP nanowires. Low density GaAsP nanowires were grown by Au assisted MOVPE on Si(001) substrates using a two step procedure to form a radial p-n junction. The STEM analyses show that the nanowires have cubic structure with the alloy composition GaAs0.88P0.12 in the nanowire core and GaAs0.76P0.24 in the shell. The nanowire ensembles were processed in the form of sub-millimeter size mesas. The photovoltaic properties were characterized by optical beam induced current (OBIC) and electronic beam induced current (EBIC) maps. Both OBIC and EBIC maps show that the photovoltage is generated by the nanowires; however, a strong signal variation from wire to wire is observed. Only one out of six connected nanowires produce a measurable signal. These strong fluctuations can be tentatively explained by the variation of the resistance of the nanowire-to-substrate connection, which is highly sensitive to the quality of the Si-GaAsP interface. This study demonstrates the importance of the spatially resolved charge collection microscopy techniques for the diagnosis of failures in nanowire photovoltaic devices.

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.

The optical polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (µ-PL) and interpreted in terms of a strain-dependent 6 × 6 k·p theoretical model. The NW heterostructures were fabricated in two steps: the Si-doped n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then epitaxially overgrown using halide vapor phase epitaxy (HVPE) to form Mg-doped AlGaN shells. The emission of the uncoated strain-free GaN NW core is found to be polarized perpendicular to the c-axis, while the GaN core compressively strained by the AlGaN shell exhibits a polarization parallel to the NW c-axis. The luminescence of the AlGaN shell is weakly polarized perpendicular to the c-axis due to the tensile axial strain in the shell.

Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire.

We report the demonstration of single-nanowire photodetectors relying on carrier generation in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are analyzed and compared to a reference binary n-i-n GaN nanowire sample. The responsivity of a single wire QDisc detector is as high as 2 x 10(3) A/W at lambda = 300 nm at room temperature. We show that the insertion of an axial heterostructure drastically reduces the dark current with respect to the binary nanowires and enhances the photosensitivity factor (i.e., the ratio between the photocurrent and the dark current) up to 5 x 10(2) for an incoming light intensity of 5 mW/cm(2). Photocurrent spectroscopy allows identification of the spectral contribution related to carriers generated within large QDiscs, which lies below the GaN band gap due to the quantum confined Stark effect.

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.

We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.

Saturation of second-harmonic generation in GaAs-AlGaAs asymmetric quantum wells.

The saturation of second-harmonic generation is observed for the first time to our knowledge in GaAs-GaAlAs asymmetric quantum wells. The sample, which consists of 200 periods of a 30-nm Ga(0.6)Al(0.4)As barrier, a 4.5-nm Ga(0.4)Al(0.09)As step barrier, and a 6-nm GaAs well, is pumped by a CO(2) TEA laser. The saturation of second-harmonic conversion is found to occur near 16 MW/cm(2). The power conversion efficiency is measured to be of the order of 3.4 x 10(-4). These results are in good agreement with theoretical predictions from a density matrix treatment.