Millimeter-Wave-to-Terahertz Superconducting Plasmonic Waveguides for Integrated Nanophotonics at Cryogenic Temperatures.

Plasmonics, as a rapidly growing research field, provides new pathways to guide and modulate highly confined light in the microwave-to-optical range of frequencies. We demonstrated a plasmonic slot waveguide, at the nanometer scale, based on the high-transition-temperature (Tc) superconductor Bi2Sr2CaCu2O8+δ (BSCCO), to facilitate the manifestation of chip-scale millimeter wave (mm-wave)-to-terahertz (THz) integrated circuitry operating at cryogenic temperatures. We investigated the effect of geometrical parameters on the modal characteristics of the BSCCO plasmonic slot waveguide between 100 and 800 GHz. In addition, we investigated the thermal sensing of the modal characteristics of the nanoscale superconducting slot waveguide and showed that, at a lower frequency, the fundamental mode of the waveguide had a larger propagation length, a lower effective refractive index, and a strongly localized modal energy. Moreover, we found that our device offered a larger SPP propagation length and higher field confinement than the gold plasmonic waveguides at broad temperature ranges below BSCCO's Tc. The proposed device can provide a new route toward realizing cryogenic low-loss photonic integrated circuitry at the nanoscale.

Active Terahertz Modulator and Slow Light Metamaterial Devices with Hybrid Graphene-Superconductor Photonic Integrated Circuits.

Metamaterial photonic integrated circuits with arrays of hybrid graphene-superconductor coupled split-ring resonators (SRR) capable of modulating and slowing down terahertz (THz) light are introduced and proposed. The hybrid device's optical responses, such as electromagnetic-induced transparency (EIT) and group delay, can be modulated in several ways. First, it is modulated electrically by changing the conductivity and carrier concentrations in graphene. Alternatively, the optical response can be modified by acting on the device temperature sensitivity by switching Nb from a lossy normal phase to a low-loss quantum mechanical phase below the transition temperature (Tc) of Nb. Maximum modulation depths of 57.3% and 97.61% are achieved for EIT and group delay at the THz transmission window, respectively. A comparison is carried out between the Nb-graphene-Nb coupled SRR-based devices with those of Au-graphene-Au SRRs, and significant enhancements of the THz transmission, group delay, and EIT responses are observed when Nb is in the quantum mechanical phase. Such hybrid devices with their reasonably large and tunable slow light bandwidth pave the way for the realization of active optoelectronic modulators, filters, phase shifters, and slow light devices for applications in chip-scale future communication and computation systems.