1.
2.
Phys Rev B Condens Matter
; 33(6): 4100-4107, 1986 Mar 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9938831
3.
Phys Rev B Condens Matter
; 50(7): 4456-4462, 1994 Aug 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9976747
4.
Phys Rev B Condens Matter
; 51(12): 7966-7968, 1995 Mar 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9977401
5.
Phys Rev B Condens Matter
; 47(8): 4485-4490, 1993 Feb 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10006595
6.
Phys Rev Lett
; 87(1): 016601, 2001 Jul 02.
Artigo
em Inglês
| MEDLINE
| ID: mdl-11461483
RESUMO
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
7.
Opt Lett
; 24(22): 1567-9, 1999 Nov 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-18079865
RESUMO
We present a diode-pumped Nd:glass fiber laser, emitting at 1060 nm, that is passively mode locked by fast nonlinear loss in low-temperature-grown GaAs (LT-GaAs). This new mode-locking mechanism is based on intensity-dependent defocusing in LT-GaAs that occurs after nonresonant generation of free carriers by two-photon absorption. Mode locking is self-starting and produces pulses as short as 4.1 ps.