RESUMO
Zeolitic imidazolate frameworks (ZIFs) are interesting materials for use in several aspects: energy storage material, gas sensing, and photocatalysis. The thermal stability and pyrolysis process are crucial in determining the active phase of the material. A deep understanding of the pyrolysis mechanism is in demand. Therefore, the thermodynamics and combustion process with different heating rates was examined, and the kinetic parameters were computed employing thermogravimetric tests. Based on the TG analysis of combustion, pyrolysis moves to the high-temperature region with an increase in heating rate. The decomposition process can be separated into the dehydration (300-503 K) and the pyrolysis reaction (703-1100 K). Three points of the decomposition process are performed by dynamical analysis owing to shifts of slopes, but the combustion process has only one stage. The Zeolitic imidazolate framework's structure properties were examined using TDDFT-DFT/DMOl3 simulation techniques. Dynamical parameters, for instance, the possible mechanism, the pre-exponential factor, and the apparent activation energy are obtained through comparison using the Kissinger formula. The thermodynamics analysis of the Zn1-xCox-ZIF-8 materials is an effective way to explore the temperature influence on the process of pyrolysis, which can benefit several environment purifications, photocatalyst, and recent applications.
RESUMO
The ability to incorporate rigid but high-performance nanoscale nonplanar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nanoscale, nonplanar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stacks, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 µm gate length, exhibits an ION value of nearly 70 µA/µm (VDS = 2 V, VGS = 2 V) and a low subthreshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device's performance with insignificant deterioration even at a high bending state.