Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals.

Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.

Epitaxy of GaN Nanowires on Graphene.

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

Electric-Field-Induced Phase Change in Copper Oxide Nanostructures.

Transition-metal oxides such as cupric and cuprous oxides are strongly correlated materials made of earth-abundant chemical elements displaying energy band gaps of around 1.2 and 2.1 eV. The ability to design nanostructures of cupric and cuprous oxide semiconductors with in situ phase change and morphological transition will benefit several applications including photovoltaic energy conversion and photoelectrochemical water splitting. Here, we have developed a physicochemical route to synthesize copper oxide nanostructures, enabling the phase change of cupric oxide into cuprous oxide using an electric field of 105 V/m in deionized water via a new synthetic design protocol called electric-field-assisted pulsed laser ablation in liquids (EFA-PLAL). The morphology of the nanostructures can also be tuned from a sphere of ∼20 nm to an elongated leaf of ∼3 µm by controlling the intensity of the applied electric field. Futuristically, the materials chemistry occurring during the EFA-PLAL synthesis protocol developed here can be leveraged to design various strongly correlated nanomaterials and heterostructures of other 3d transition-metal oxides.

Synthesis of ZnO sol-gel thin-films CMOS-Compatible.

Zinc oxide (ZnO) is a II-VI group semiconductor with a wide direct bandgap and is an important material for various fields of industry and high-technological applications. The effects of thickness, annealing process in N2 and air, optical properties, and morphology of ZnO thin-films are studied. A low-cost sol-gel spin-coating technique is used in this study for the simple synthesis of eco-friendly ZnO multilayer films deposited on (100)-oriented silicon substrates ranging from 150 to 600 nm by adjusting the spin coating rate. The ZnO sol-gel thin-films using precursor solutions of molarity 0.75 M exhibit an average optical transparency above 98%, with an optical band gap energy of 3.42 eV. The c-axis (002) orientation of the ZnO thin-films annealed at 400 °C were mainly influenced by the thickness of the multilayer, which is of interest for piezoelectric applications. These results demonstrate that a low-temperature method can be used to produce an eco-friendly, cost-effective ZnO sol-gel that is compatible with a complementary metal-oxide-semiconductor (CMOS) and integrated-circuits (IC).

Effect of the Al2O3 Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface.

Parylene C (PC) has attracted tremendous attention throughout the past few years due to its extraordinary properties such as high mechanical strength and biocompatibility. When used as a flexible substrate and combined with high-κ dielectrics such as aluminum oxide (Al2O3), the Al2O3/PC stack becomes very compelling for various applications in fields such as biomedical microsystems and microelectronics. For the latter, the atomic layer deposition of oxides is particularly needed as it allows the deposition of high-quality and nanometer-scale oxide thicknesses. In this work, atomic layer deposition (ALD) and electron beam physical vapor deposition (EBPVD) of Al2O3 on a 15 µm-thick PC layer are realized and their effects on the Al2O3/PC resulting stack are investigated via X-ray photoelectron spectroscopy combined with atomic force microscopy. An ALD-based Al2O3/PC stack is found to result in a nanopillar-shaped surface, while an EBPVD-based Al2O3/PC stack yields an expected smooth surface. In both cases, the Al2O3/PC stack can be easily peeled off from the reusable SiO2 substrate, resulting in a flexible Al2O3/PC film. These fabrication processes are economic, high yielding, and suitable for mass production. Although ALD is particularly appreciated in the semiconducting industry, EBPVD is here found to be better for the realization of the Al2O3/PC flexible substrate for micro- and nanoelectronics.

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n­ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

Spherically bent analyzers for resonant inelastic X-ray scattering with intrinsic resolution below 200 meV.

Resonant inelastic X-ray scattering with very high energy resolution is a promising technique for investigating the electronic structure of strongly correlated materials. The demands for this technique are analyzers which deliver an energy resolution of the order of 200 meV full width at half-maximum or below, at energies corresponding to the K-edges of transition metals (Cu, Ni, Co etc.). To date, high resolution under these conditions has been achieved only with diced Ge analyzers working at the Cu K-edge. Here, by perfecting each aspect of the fabrication, it is shown that spherically bent Si analyzers can provide the required energy resolution. Such analyzers have been successfully produced and have greatly improved the energy resolution in standard spherically bent analyzers.