Magneto-ionic control of magnetism using a solid-state proton pump.

Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2- displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal-metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin-orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin-orbitronics.

Current-induced switching in a magnetic insulator.

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Observation of room-temperature magnetic skyrmions and their current-driven dynamics in ultrathin metallic ferromagnets.

Magnetic skyrmions are topologically protected spin textures that exhibit fascinating physical behaviours and large potential in highly energy-efficient spintronic device applications. The main obstacles so far are that skyrmions have been observed in only a few exotic materials and at low temperatures, and fast current-driven motion of individual skyrmions has not yet been achieved. Here, we report the observation of stable magnetic skyrmions at room temperature in ultrathin transition metal ferromagnets with magnetic transmission soft X-ray microscopy. We demonstrate the ability to generate stable skyrmion lattices and drive trains of individual skyrmions by short current pulses along a magnetic racetrack at speeds exceeding 100 m s(-1) as required for applications. Our findings provide experimental evidence of recent predictions and open the door to room-temperature skyrmion spintronics in robust thin-film heterostructures.

Interface-driven chiral magnetism and current-driven domain walls in insulating magnetic garnets.

Magnetic oxides exhibit rich fundamental physics1-4 and technologically desirable properties for spin-based memory, logic and signal transmission5-7. Recently, spin-orbit-induced spin transport phenomena have been realized in insulating magnetic oxides by using proximate heavy metal layers such as platinum8-10. In their metallic ferromagnet counterparts, such interfaces also give rise to a Dzyaloshinskii-Moriya interaction11-13 that can stabilize homochiral domain walls and skyrmions with efficient current-driven dynamics. However, chiral magnetism in centrosymmetric oxides has not yet been observed. Here we discover chiral magnetism that allows for pure spin-current-driven domain wall motion in the most ubiquitous class of magnetic oxides, ferrimagnetic iron garnets. We show that epitaxial rare-earth iron garnet films with perpendicular magnetic anisotropy exhibit homochiral Néel domain walls that can be propelled faster than 800 m s-1 by spin current from an adjacent platinum layer. We find that, despite the relatively small interfacial Dzyaloshinskii-Moriya interaction, very high velocities can be attained due to the antiferromagnetic spin dynamics associated with ferrimagnetic order.

Fast current-driven domain walls and small skyrmions in a compensated ferrimagnet.

Spintronics is a research field that aims to understand and control spins on the nanoscale and should enable next-generation data storage and manipulation. One technological and scientific key challenge is to stabilize small spin textures and to move them efficiently with high velocities. For a long time, research focused on ferromagnetic materials, but ferromagnets show fundamental limits for speed and size. Here, we circumvent these limits using compensated ferrimagnets. Using ferrimagnetic Pt/Gd44Co56/TaOx films with a sizeable Dzyaloshinskii-Moriya interaction, we realize a current-driven domain wall motion with a speed of 1.3 km s-1 near the angular momentum compensation temperature (TA) and room-temperature-stable skyrmions with minimum diameters close to 10 nm near the magnetic compensation temperature (TM). Both the size and dynamics of the ferrimagnet are in excellent agreement with a simplified effective ferromagnet theory. Our work shows that high-speed, high-density spintronics devices based on current-driven spin textures can be realized using materials in which TA and TM are close together.

Current-Induced Skyrmion Generation through Morphological Thermal Transitions in Chiral Ferromagnetic Heterostructures.

Magnetic skyrmions promise breakthroughs in future memory and computing devices due to their inherent stability and small size. Their creation and current driven motion have been recently observed at room temperature, but the key mechanisms of their formation are not yet well-understood. Here it is shown that in heavy metal/ferromagnet heterostructures, pulsed currents can drive morphological transitions between labyrinth-like, stripe-like, and skyrmionic states. Using high-resolution X-ray microscopy, the spin texture evolution with temperature and magnetic field is imaged and it is demonstrated that with transient Joule heating, topological charges can be injected into the system, driving it across the stripe-skyrmion boundary. The observations are explained through atomistic spin dynamic and micromagnetic simulations that reveal a crossover to a global skyrmionic ground state above a threshold magnetic field, which is found to decrease with increasing temperature. It is demonstrated how by tuning the phase stability, one can reliably generate skyrmions by short current pulses and stabilize them at zero field, providing new means to create and manipulate spin textures in engineered chiral ferromagnets.

Three-terminal resistive switch based on metal/metal oxide redox reactions.

A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 103 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current.