Very Strong Binding for a Neutral Calix[4]pyrrole Receptor Displaying Positive Allosteric Binding.

The dual-analyte responsive behavior of tetraTTF-calix[4]pyrrole receptor 1 has been shown to complex electron-deficient planar guests in a 2:1 fashion by adopting a so-called 1,3-alternate conformation. However, stronger 1:1 complexes have been demonstrated with tetraalkylammonium halide salts that defer receptor 1 to its cone conformation. Herein, we report the complexation of an electron-deficient planar guest, 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA, 2) that champions the complexation with 1, resulting in a high association constant Ka = 3 × 1010 M-2. The tetrathiafulvalene (TTF) subunits in the tetraTTF-calix[4]pyrrole receptor 1 present a near perfect shape and electronic complementarity to the NTCDA guest, which was confirmed by X-ray crystal structure analysis, DFT calculations, and electron density surface mapping. Moreover, the complexation of these species results in the formation of a charge transfer complex (22⊂1) as visualized by a readily apparent color change from yellow to brown.

Consecutive thiophene-annulation approach to π-extended thienoacene-based organic semiconductors with [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure.

We describe a new synthetic route to the [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b]anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and bis[1]benzothieno[2,3-d:2',3'-d']naphtho[2,3-b:6,7-b']dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm(2) V(-1) s(-1)) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.

Synthesis, characterization, and transistor and solar cell applications of a naphthobisthiadiazole-based semiconducting polymer.

We report the synthesis and characterization of a novel donor-acceptor semiconducting polymer bearing naphthobisthiadiazole (NTz), a doubly benzothiadiazole (BTz)-fused ring, and its applications to organic field-effect transistors and bulk heterojunction solar cells. With NTz's highly π-extended structure and strong electron affinity, the NTz-based polymer (PNTz4T) affords a smaller bandgap and a deeper HOMO level than the BTz-based polymer (PBTz4T). PNTz4T exhibits not only high field-effect mobilities of ~0.56 cm(2)/(V s) but also high photovoltaic properties with power conversion efficiencies of ~6.3%, both of which are significantly high compared to those for PBTz4T. This is most likely due to the more suitable electronic properties and, importantly, the more highly ordered structure of PNTz4T in the thin film than that of PBTz4T, which might originate in the different symmetry between the cores. NTz, with centrosymmetry, can lead to a more linear backbone in the present polymer system than BTz with axisymmetry, which might be favorable for better molecular ordering. These results demonstrate great promise for using NTz as a bulding unit for high-performance semiconducting polymers for both transistors and solar cells.

Synthesis, characterization, and spectroscopic analysis of antiaromatic benzofused metalloporphyrins.

A two-electron oxidation of the Cu(II) (9) and Zn(II) (12) complexes of tetraphenyltetrabenzoporphyrin (TPTBP) results in the formation of stable antiaromatic [(TPTBP)Cu(II)(H(2)O)](2+)⋅2 [SbF(6)](-) (10) and [(TPTBP)Zn(II)(H(2)O)(2)](2+)⋅2 [SbF(6)](-) (13) with 16π electrons on the inner ligand perimeter. X-ray structures of the parent TPTBP complexes, the dications, and singly oxidized species [(TPTBP)Cu(II)](⋅+)[SbF(6)](-) (11) reveal that the use of TPTBP rather than a porphyrin ligand reduces the degree of nonplanarity in the 16π-electron species relative to the parent 18π complex. Significant high-field shifts of the (1)H NMR signals of the outer ring protons and large positive values in calculations of nucleus-independent chemical shifts on the central cavity of the porphyrin ring provide unambiguous evidence for the antiaromatic character of the 16π Zn(II) species. A combination of magnetic circular dichroism spectroscopic studies and TD-DFT calculations on both the Zn(II) and Cu(II) species demonstrates that the main electronic bands of the dicationic species can be readily assigned by using Michl's 4N perimeter model. Femtosecond transient absorption studies clearly demonstrated that the number of π electrons on the inner ligand perimeter and the configuration of the central metal ion play a critical role in the excited-state relaxation dynamics. Redox potentials for conversion between the 16π, 17π, and 18π systems were measured by cyclic voltammetry in dichloromethane and benzonitrile, and UV/Vis spectra of each oxidation/reduction product were monitored by thin-layer spectroelectrochemistry.

Isomerically pure anthra[2,3-b:6,7-b']-difuran (anti-ADF), -dithiophene (anti-ADT), and -diselenophene (anti-ADS): selective synthesis, electronic structures, and application to organic field-effect transistors.

A new straightforward synthesis of isomerically pure anthra[2,3-b:6,7-b'] -difuran (anti-ADF), -dithiophene (anti-ADT), and -diselenophene (anti-ADS) from readily available 2,6-dimethoxyanthracene is described. The present successful synthesis makes it possible to overview the linear-shaped anti-acenedichalcogenophene compounds, that is, benzo[1,2-b:4,5-b']-, naphtho[2,3-b:6,7-b']-, and anthra[2,3-b:6,7-b']- difuran, -dithiophene, and -diselenophene. By comparing their electrochemical and photochemical properties, the electronic structures of acenedichalcogenophenes can be expressed as the outcome of balance between the central acene core and the outermost chalcogenophene rings. Among isomerically pure parent anti-anthradichalcogenophenes, anti-ADT and anti-ADS can afford crystalline thin films by vapor deposition, which acted as active layer in organic field-effect transistors with mobility as high as 0.3 cm(2) V(-1) s(-1) for ADT and 0.7 cm(2) V(-1) s(-1) for ADS. The mobility of isomerically pure anti-ADT is higher by several times than those reported for isomercally mixed ADT, implying that the isomeric purity could be beneficial for realizing the better FET mobility. We also tested the diphenyl derivatives of anti-ADF, -ADT, and -ADS as the active material for OFET devices, which showed high mobility of up to 1.3 cm(2) V(-1) s(-1).

Dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT): synthesis, characterization, and FET characteristics of new π-extended heteroarene with eight fused aromatic rings.

A novel highly π-extended heteroarene with eight fused aromatic rings, dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT), was selectively synthesized via a newly developed synthetic strategy, fully characterized by means of single crystal X-ray structural analysis, and examined as an organic semiconductor in thin film transistors. Even with its highly extended acene-like π-system, DATT is a fairly air-stable compound with IP of 5.1 eV. Single crystal X-ray structural analysis revealed its planar molecular structure and the lamella-like layered structure with typical herringbone packing. Theoretical calculations of the solid state electronic structure based on the bulk single crystal structure suggest that DATT affords almost comparable intermolecular orbital couplings between HOMOs (t(HOMO)) with those of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), implying its good potential as an organic semiconductor for organic field-effect transistors. In fact, field-effect mobilities as high as 3.0 cm(2) V(-1) s(-1) were achieved with vapor-processed DATT-based devices, which is comparable with that of DNTT-based devices. The molecular ordering of DATT in the thin film state, however, turned out to be not completely uniform; as elucidated by in-plane and out-of-plane XRD measurements, the face-on molecular orientation was contaminated in the edge-on orientation, the former of which is not optimal for efficient carrier transport and thus could limit the mobility.

Linear- and angular-shaped naphthodithiophenes: selective synthesis, properties, and application to organic field-effect transistors.

A straightforward synthetic approach that exploits linear- and angular-shaped naphthodithiophenes (NDTs) being potential as new core structures for organic semiconductors is described. The newly established synthetic procedure involves two important steps; one is the chemoselective Sonogashira coupling reaction on the trifluoromethanesulfonyloxy site over the bromine site enabling selective formation of o-bromoethynylbenzene substructures on the naphthalene core, and the other is a facile ring closing reaction of fused-thiophene rings from the o-bromoethynylbenzene substructures. As a result, three isomeric NDTs, naphtho[2,3-b:6,7-b']dithiophene, naphtho[2,3-b:7,6-b']dithiophenes, and naphtho[2,1-b:6,5-b']dithiophene, are selectively synthesized. Electrochemical and optical measurements of the parent NDTs indicated that the shape of the molecules plays an important role in determining the electronic structure of the compounds; the linear-shaped NDTs formally isoelectronic with naphthacene have lower oxidation potentials and more red-shifted absorption bands than those of the angular-shaped NDTs isoelectronic with chrysene. On the contrary, the performance of the thin-film-based field-effect transistors (FETs) using the dioctyl or diphenyl derivatives were much influenced by the symmetry of the molecules; centrosymmetric derivatives tend to give higher mobility (up to 1.5 cm(2) V(-1) s(-1)) than axisymmetric ones (∼0.06 cm(2) V(-1) s(-1)), implying that the intermolecular orbital overlap in the solid state is influenced by the symmetry of the molecules. These results indicate that the present NDT cores, in particular the linear-shaped, centrosymmetric naphtho[2,3-b:6,7-b']dithiophene, are promising building blocks for the development of organic semiconducting materials.

Synthesis and characterization of benzo[1,2-b:3,4-b':5,6-b'']trithiophene (BTT) oligomers.

Two dimers (2 and 3), dendritic tetramer (4), hexamer (5), and decamer (6) of benzo[1,2-b:3,4-b':5,6-b'']trithiophene (BTT), a potential π-core unit with C(3h) symmetry, were synthesized, characterized, and evaluated for possible use as organic semiconductors. Single crystal X-ray analyses of the dimers (2 and 3) revealed that they have planar molecular structures with dihedral angles of almost 180° between two BTT units. In accordance with the rigid and planar molecular structure, the unsubstituted dimer (2) is poorly soluble, whereas the octyl-substituted dimer (3) has improved solubility. Although the solubility of the dendritic tetramer (4) is decreased, further extended systems, i.e., the dendritic hexamer (5) and decamer (6), have solubilities better than that of 4. With increasing numbers of BTT units in the molecule, the experimentally determined energy levels of HOMO shift upward slightly and the HOMO-LUMO energy gaps become smaller, but the extent of HOMO destabilization and reduction of the HOMO-LUMO gap are not significant. Taking into account the energy levels of the frontier orbitals, 3-6 could be useful as p-channel organic semiconductors rather than n-channel. In fact, the spin-coated thin film of 3 with edge-on molecular orientation acted as an active channel of field-effect transistors that showed hole mobilities as high as 0.14 cm(2) V(-1) s(-1), indicating that the BTT core is a useful π-conjugated system for application to organic semiconductors, although 4-6 gave FET characteristics rather inferior to those of 3, owing to their amorphous nature in the thin film state.

((Alkyloxy)carbonyl)cyanomethylene-substituted thienoquinoidal compounds: a new class of soluble n-channel organic semiconductors for air-stable organic field-effect transistors.

A new n-channel semiconductor class for organic field-effect transistors (OFETs) based on thienoquinoidal structures is reported. A newly employed terminal group, the ((alkyloxy)carbonyl)cyanomethylene moiety, plays two important roles in the thienoquinoidal compounds: i.e., as an electron-withdrawing group to keep the LUMO energy level sufficiently low for acting as an n-channel organic semiconductor and as a solubilizing group to facilitate solution processability. For the construction of this class of compounds, a new, straightforward synthetic method was established and applied to oligothienoquinoidal and fused thienoquinoidal systems. When both core and alkyl groups in the ester moiety were tuned, the thienoquinoidals exhibited good solubility, stability in the atmosphere, and electron-accepting properties, as well as solution processability. Solution-processed FETs based on the terthienoquinoid derivative with ((n-alkyloxy)carbonyl)cyanomethylene moieties exhibit good electron mobilities (mu approximately 0.015 cm(2) V(-1) s(-1)) and I(on)/I(off) approximately = 10(5) under ambient conditions. Vapor-processed FETs using the benzodithienoquinoidal derivative showed similar n-channel FET characteristics.

High-mobility semiconducting naphthodithiophene copolymers.

We have designed and synthesized novel semiconducting polymers by introducing naphtho[1,2-b:5,6-b']dithiophene (NDT) into the polythiophene backbone. These polymers, which have a highly pi-extended heteroarene unit, achieved mobilities (>0.5 cm(2) V(-1) s(-1)) that are among the highest recorded to date for semiconducting polymers and most probably result from the highly ordered thin-film structures with crystalline close pi stacking. It is noteworthy that the choice of isomeric heteroarenes in the unit can dramatically change the physical and electronic structures and hence the OFET performance of the semiconducting polymers, even though the two isomers possess similar electronic structures; interestingly, this contrasts with the trend in small-molecule systems. We believe that these findings will give new insight into the design of new organic semiconducting materials and that the present polymers are promising materials for printable electronics.

Synthesis, properties, crystal structures, and semiconductor characteristics of naphtho[1,2-b:5,6-b']dithiophene and -diselenophene derivatives.

In this paper we present the synthesis, structures, characterization, and applications to field-effect transistors (FETs) of naphtho[1,2-b:5,6-b']dithiophene (NDT) and -diselenophene (NDS) derivatives. Treatment of 1,5-dichloro-2,6-diethynylnaphthalenes, easily derived from commercially available 2,6-dihydroxynaphthalene, with sodium chalcogenide afforded a straightforward access to NDTs and NDSs including the parent and dioctyl and diphenyl derivatives. Physicochemical evaluations of NDT and NDS derivatives showed that these heteroarenes have a similar electronic structure with isomeric [1]benzothieno[2,3-b][1]benzothiophene (BTBT) and [1]benzoselenopheneno[2,3-b][1]benzoselenophene (BSBS) derivatives, respectively. Although attempts to fabricate solution-processed field-effect transistors (FETs) with soluble dioctyl-NDT (C(8)-NDT) and -NDS (C(8)-NDS) failed, diphenyl derivatives (DPh-NDT and DPh-NDS) afforded vapor-processed FETs showing field-effect mobility as high as 0.7 cm(2) V(-1) s(-1). These results indicated that NDT and NDS are new potential heteroarene core structures for organic semiconducting materials.

Air-stable solution-processed ambipolar organic field-effect transistors based on a dicyanomethylene-substituted terheteroquinoid derivative.

Dicyanomethylene-substituted quinoidal mixed oligomer was synthesized as a new soluble organic semiconductor, and OFET devices fabricated with a spin-coated thin film of showed ambipolar FET characteristics with electron and hole mobilities of 1.6 x 10(-2) and 7.0 x 10(-3) cm(2) V(-1) s(-1), respectively.

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

Synthesis, properties, and structures of benzo[1,2-b:4,5-b']bis[b]benzothiophene and benzo[1,2-b:4,5-b']bis[b]benzoselenophene.

Employing two consecutive cyclization reactions, benzo[1,2-b:4,5-b']bis[b]benzochalcogenophenes, which are pi-extended heteroarenes, were efficiently synthesized. Their electronic and crystal structures were elucidated on the basis of UV-vis spectra, electrochemical measurements, and X-ray structural analyses.

Ionic manipulation of charge-transfer and photodynamics of [60]fullerene confined in pyrrolo-tetrathiafulvalene cage.

A cage molecule incorporating three electron donating monopyrrolotetrathiafulvalene units was synthesised to host electron accepting [60]fullerenes. Formation of a strong 1 : 1 donor-acceptor (D-A) complex C60⊂1 was confirmed by solid state X-ray analysis as well as 1H NMR and absorption spectroscopic analyses of the arising charge-transfer (CT) band (λ = 735 nm, ε ≈ 840 M-1 cm-1). Inserting Li+ inside the [60]fullerene increased the binding 28-fold (Ka = 3.7 × 106 M-1) and a large bathochromic shift of the CT band to the near infrared (NIR) region (λ = 1104 nm, ε ≈ 4800 M-1 cm-1) was observed.

Soluble Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene Derivatives for Solution-Processed Organic Field-Effect Transistors.

We demonstrate a new approach to solution-processable dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) derivatives that can afford good thin-film transistors having mobilities higher than 0.1 cm(2) V(-1) s(-1). The key molecular design strategy is the introduction of one branched alkyl group at the edge of the DNTT core, which improves solubility while retaining semiconducting characteristics in the thin-film state. Dialkylation, i.e., the introduction of two branched alkyl groups on the DNTT core, had a detrimental effect on the semiconducting properties. Although the physicochemical properties of the mono- and dialkylated derivatives at the molecular level were almost the same, the thin-film absorption spectra and the ionization potentials (IPs) were markedly different, indicating that the intermolecular interaction in the thin-film state was affected by the number of alkyl groups. Indeed, the packing structures of the monoalkylated DNTTs in the thin-film state, which were estimated from the XRD patterns, were similar to that of parent DNTT, indicating the existence of the lamella structure with the herringbone packing motif. In sharp contrast, the XRD patterns of the dialkylated DNTT thin films showed poor crystallinity, and the packing structures were significantly different from that of parent DNTT. All the results of structural characterization in the thin-film state and evaluation of device characteristics of the DNTT derivatives with branched alkyl groups indicate that the introduction of a branched alkyl group in the molecular long-axis direction is an effective way to solubilize the rigid, largely π-extended organic semiconducting core without interfering with the semiconducting characteristics in the thin-film state.

Diphenyl derivatives of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene: organic semiconductors for thermally stable thin-film transistors.

Two isomeric diphenyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DPh-DNTTs), 2,9- and 3,10-DPh-DNTT, were characterized by means of single-crystal X-ray analysis, thin film XRDs, and evaluation of organic field-effect transistors (OFETs) using their evaporated thin films. The packing structures both in the single crystal and thin film state were classified into a typical herringbone packing regardless of the substitution positions, similar to the parent DNTT. The OFETs showed typical p-channel transistor characteristics with mobilities of as high as 3.5 cm2 V(-1) s(-1) for both isomers, which is slightly higher than that of the parent DNTT. Compared to related DNTT-based organic semiconductors, a unique point of DPh-DNTTs was found to be superior thermal stability in OFET devices. In particular, the 2,9-DPh-DNTT-based OFETs preserved its superior FET characteristics up to 250 °C. For its excellent thermal stability with good FET characteristics, 2,9-DPh-DNTT can be a useful organic semiconductor in various applications that require processes at high temperatures.

Largely π-extended thienoacenes with internal thieno[3,2-b]thiophene substructures: synthesis, characterization, and organic field-effect transistor applications.

Two largely π-extended thienoacenes with internal thieno[3,2-b]thiophene substructures, i.e., bis[1]benzothieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (BBTBDT) and bis(naphtho[2,3-b]thieno)[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (BNTBDT), were synthesized, characterized, and evaluated as an active layer in thin-film organic field-effect transistors.

[2,2']Bi[naphtho[2,3-b]furanyl]: a versatile organic semiconductor with a furan-furan junction.

[2,2']Bi[naphtho[2,3-b]furanyl] was synthesized, characterized, and examined as an organic semiconductor for thin-film OFETs, bilayer OPVs, and organic light-emitting transistors (OLETs). In the devices, the material acted as a p-type semiconductor, showing moderately high mobility in OFETs, good photo conversion efficiency in OPVs, and blue-green emission in OLETs.