Controlling the helicity of light by electrical magnetization switching.

Controlling the intensity of emitted light and charge current is the basis of transferring and processing information1. By contrast, robust information storage and magnetic random-access memories are implemented using the spin of the carrier and the associated magnetization in ferromagnets2. The missing link between the respective disciplines of photonics, electronics and spintronics is to modulate the circular polarization of the emitted light, rather than its intensity, by electrically controlled magnetization. Here we demonstrate that this missing link is established at room temperature and zero applied magnetic field in light-emitting diodes2-7, through the transfer of angular momentum between photons, electrons and ferromagnets. With spin-orbit torque8-11, a charge current generates also a spin current to electrically switch the magnetization. This switching determines the spin orientation of injected carriers into semiconductors, in which the transfer of angular momentum from the electron spin to photon controls the circular polarization of the emitted light2. The spin-photon conversion with the nonvolatile control of magnetization opens paths to seamlessly integrate information transfer, processing and storage. Our results provide substantial advances towards electrically controlled ultrafast modulation of circular polarization and spin injection with magnetization dynamics for the next-generation information and communication technology12, including space-light data transfer. The same operating principle in scaled-down structures or using two-dimensional materials will enable transformative opportunities for quantum information processing with spin-controlled single-photon sources, as well as for implementing spin-dependent time-resolved spectroscopies.

Kardar-Parisi-Zhang universality in a one-dimensional polariton condensate.

Revealing universal behaviours is a hallmark of statistical physics. Phenomena such as the stochastic growth of crystalline surfaces1 and of interfaces in bacterial colonies2, and spin transport in quantum magnets3-6 all belong to the same universality class, despite the great plurality of physical mechanisms they involve at the microscopic level. More specifically, in all these systems, space-time correlations show power-law scalings characterized by universal critical exponents. This universality stems from a common underlying effective dynamics governed by the nonlinear stochastic Kardar-Parisi-Zhang (KPZ) equation7. Recent theoretical works have suggested that this dynamics also emerges in the phase of out-of-equilibrium systems showing macroscopic spontaneous coherence8-17. Here we experimentally demonstrate that the evolution of the phase in a driven-dissipative one-dimensional polariton condensate falls in the KPZ universality class. Our demonstration relies on a direct measurement of KPZ space-time scaling laws18,19, combined with a theoretical analysis that reveals other key signatures of this universality class. Our results highlight fundamental physical differences between out-of-equilibrium condensates and their equilibrium counterparts, and open a paradigm for exploring universal behaviours in driven open quantum systems.

Whispering-Gallery Quantum-Well Exciton Polaritons in an Indium Gallium Arsenide Microdisk Cavity.

Despite appealing high-symmetry properties that enable strong spatial confinement and ultrahigh-Q, optical whispering-gallery modes of spherical and circular resonators have been absent from the field of quantum-well exciton polaritons. Here we observe whispering-gallery exciton polaritons in a gallium arsenide microdisk cavity filled with indium gallium arsenide quantum wells, the test bed materials of polaritonics. Strong coupling is evidenced in photoluminescence and resonant spectroscopy accessed through concomitant confocal microscopy and near-field optical techniques. Excitonic and optical resonances are tuned by varying temperature and disk radius, revealing Rabi splittings between 5 and 10 meV. A dedicated analytical quantum model for such circular whispering-gallery polaritons is developed, which reproduces the measured values. At high power, lasing is observed and accompanied by a blueshift of the emission consistent with the regime of polariton lasing. With experimental methods and theory now established, whispering-gallery-mode polaritons in round dielectric resonators appear as a new viable platform toward low loss polaritonics.

Enhancement of Single-Photon Purity and Coherence of III-Nitride Quantum Dot with Polarization-Controlled Quasi-Resonant Excitation.

III-Nitride semiconductor-based quantum dots (QDs) play an essential role in solid-state quantum light sources because of their potential for room-temperature operation. However, undesired background emission from the surroundings deteriorates single-photon purity. Moreover, spectral diffusion causes inhomogeneous broadening and limits the applications of QDs in quantum photonic technologies. To overcome these obstacles, it is demonstrated that directly pumping carriers to the excited state of the QD reduces the number of carriers generated in the vicinities. The polarization-controlled quasi-resonant excitation is applied to InGaN QDs embedded in GaN nanowire. To analyze the different excitation mechanisms, polarization-resolved absorptions are investigated under the above-barrier bandgap, below-barrier bandgap, and quasi-resonant excitation conditions. By employing polarization-controlled quasi-resonant excitation, the linewidth is reduced from 353 to 272 µeV, and the second-order correlation value is improved from 0.470 to 0.231. Therefore, a greater single-photon purity can be obtained at higher temperatures due to decreased linewidth and background emission.

Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.

We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.

Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques.

In this work, nanoscale electrical and optical properties of n-GaN nanowires (NWs) containing GaN/AlN multiple quantum discs (MQDs) grown by molecular beam epitaxy are investigated by means of single wire I(V) measurements, electron beam induced current microscopy (EBIC) and cathodoluminescence (CL) analysis. A strong impact of non-intentional AlN and GaN shells on the electrical resistance of individual NWs is put in evidence. The EBIC mappings reveal the presence of two regions with internal electric fields oriented in opposite directions: one in the MQDs region and the other in the adjacent bottom GaN segment. These fields are found to co-exist under zero bias, while under an external bias either one or the other dominates the current collection. In this way EBIC maps allow us to locate the current generation within the wire under different bias conditions and to give the first direct evidence of carrier collection from AlN/GaN MQDs. The NWs have been further investigated by photoluminescence and CL analyses at low temperature. CL mappings show that the near band edge emission of GaN from the bottom part of the NW is blue-shifted due to the presence of the radial shell. In addition, it is observed that CL intensity drops in the central part of the NWs. Comparing the CL and EBIC maps, this decrease of the luminescence intensity is attributed to an efficient charge splitting effect due to the electric fields in the MQDs region and in the GaN base.

Brillouin Scattering Selection Rules in Polarization-Sensitive Photonic Resonators.

Spontaneous Brillouin scattering in bulk crystalline solids is governed by the intrinsic selection rules locking the relative polarization of the excitation laser and the Brillouin signal. In this work, we independently manipulate the polarization of the two by employing polarization-sensitive optical resonances in elliptical micropillars to induce a wavelength-dependent rotation of the polarization states. Consequently, a polarization-based filtering technique allows us to measure acoustic phonons with frequencies difficult to access with standard Brillouin and Raman spectroscopies. This technique can be extended to other polarization-sensitive optical systems, such as plasmonic, photonic, or birefringent nanostructures, and finds applications in optomechanical, optoelectronic, and quantum optics devices.

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm². These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.