A knowledge-based simple education program for patients with epilepsy in Japan: Effects sustained after the program implementation.

PURPOSE: To investigate the effects of an original education program on patients with epilepsy (PWE). The effects on knowledge about epilepsy, attitude to epilepsy, depression scales, and quality of life were investigated. METHOD: Thirty-five PWE participated in a lecture-style educational program using an original knowledge-oriented textbook. All patients were administered a total of four rating scales: the Knowledge about Epilepsy Scale (KES), the Attitude toward Epilepsy Scale (AES), and the Japanese version of the Quality of Life in Epilepsy Inventory (QOLIE-31-P), the Beck Depression Inventory (BDI). The KES and AES of patients (pKES and pAES) were compared to those of medical students (St) and residents (Rd). RESULTS: After education, pKES improved and showed significant differences among pre-and post-education and six months later. Before education, pKES was inferior to St and Rd. However, after education, pKES changed and became superior to St and Rd. Six months later, the advantage was lost, but not significantly. PAES also improved after education, with significant differences before, after, and six months later after education. PAES was statistically inferior to St and Rd before education, but the difference disappeared after education, and the effect persisted after six months. The non-depressed (BDI < 20) and depressed groups (BDI â‰§ 20) improved in the KES after education. About the AES, the non-depressive group has a statistical tendency, but not the depressive group. At six months, the depressed group's AES is significantly lower than the non-depressed group. CONCLUSION: While correct knowledge about epilepsy can improve attitudes and perceptions of epilepsy in PWE, special measures are needed for PWE with depression.

Numerical investigation of side emission from large-area vertical-cavity surface-emitting lasers.

For large-area ion-implanted vertical-cavity surface-emitting lasers (VCSELs), side emission from the edges of a chip disturbs the laser emission of a VCSEL mode, and suppression of it is fundamental. In this paper, we present results of a numerical investigation of the side emission from large-area VCSELs. We have modeled a VCSEL structure by an infinitely broad layer structure with mirror loss at the edge surfaces. Estimated threshold gains indicate that laser emission occurs either in a VCSEL mode or in an edge-emitting Fabry-Perot (EEFP) mode. Calculated emitter length dependence of the threshold gain of these modes shows good agreement with experimental results, and the side emission is verified to be the laser emission of the EEFP mode. We have also discussed the way to suppress the side emission and confirmed that our recent achievement of over 200 W quasi-continuous-wave output from an ion-implanted VCSEL array is due to antireflection coatings of the edges and introduction of optical losses in ex-emitter regions.

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture.

We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm2 have been achieved at 15 °C from the 100-µm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.