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The ZnO/GaN heterojunctions are extensively investigated now, owing to their good luminescent properties and devisable capability to form efficient hybrid structures. An electron-blocking layer inserted into heterojunctions can greatly change their properties. In this work, n-ZnO/ß-InxGa2-xO3/p-GaN heterojunctions have been successfully formed using atomic layer deposition methods. We show that the doping of In can effectively tune the band edges of the heterojunctions. First-principle calculations reveal that the bandgap of bulk ß-InxGa2-xO3 shrinks linearly with the increase in In contents, accompanied by an upward movement of the valence band maximum and a downward movement of the conduction band minimum. As the indium concentrations increase, the valence band offsets show an upward movement at both the InxGa2-xO3/GaN and ZnO/InxGa2-xO3 interfaces, while the conduction band offsets present different trends. A broad, reddish yellow-green emission appears after In doping, which verifies the effect of band alignment. What is more, we show that the amorphization of InxGa2-xO3 can play an important role in tuning the band edge. This work provides access to a series of band offsets tunable heterojunctions and can be used for the further design of direct white light-emitting diodes without any phosphors, based on this structure.
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The physical properties and potential applications of two-dimensional (2D) materials can be effectively modulated and enriched by constructing van der Waals heterostructures (VDWHs) with two or more 2D monolayer materials. In this work, by using first-principles calculations based on density functional theory (DFT), we have systematically investigated the structural, electronic and optical properties of four α-Se-based VDWHs, that is, α-Se/Ca(OH)2, α-Se/GaSe, α-Se/h-BN and α-Se/MoS2 VDWHs. The results show that both the band alignment and band gap of these four VDWHs can be effectively modulated by interlayer coupling, biaxial strain and an external electric field. Compared with interlayer coupling and biaxial strain, the external electric field can modulate the electronic properties of these VDWHs more significantly, which makes them exhibit more rich electronic properties. Interestingly, the optical property calculations revealed that both α-Se and the four α-Se-based VDWHs have intrinsic hyperbolic properties. In addition, compared with the individual components, the optical absorption of these four VDWHs in the visible and ultraviolet light regions is significantly enhanced. These results enrich the properties of selenene and selenene-based VDWHs and extend their potential applications in electronic and optoelectronic devices.
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Elemental two-dimensional (2D) materials have attracted extraordinary interest compared with other 2D materials over the past few years. Fifteen elements from group IIIA to VIA have been discussed experimentally or theoretically for the formation of 2D monolayers, and the remaining few elements still need to be identified. Here, using first-principles calculations within density functional theory (DFT) and ab initio molecular dynamics simulations (AIMDs), we demonstrated that polonium can form stable 2D monolayers (MLs) with a 1T-MoS2-like structure. The band structure calculations revealed that polonium monolayers possess strong semiconducting properties with a band gap of â¼0.9 eV, and such semiconducting properties can well sustain up to a thickness of 4 MLs with a bandgap of â¼0.1 eV. We also found that polonium monolayers can be achieved through a spontaneous phase transition of ultrathin films with magic thicknesses, resulting in a weaker van der Waals interaction of â¼32 meV Å-2 between each three atomic layers. Also, the underlying physics comes from layered Peierls-like distortion driven by strong quantum size effects. Based on these intriguing findings, a suitable substrate on which the polonium monolayer can be grown through an epitaxial growth technique is proposed for further experiments. Our work not only extends completely the puzzle of elemental 2D monolayer materials from group IIIA to VIA, but also presents a new formation mechanism of 2D materials beyond the database of bulk materials with layered van der Waals interactions.
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Nowadays, one of the most typical and important potential applications of negative thermal expansion (NTE) materials is to prepare zero thermal expansion or controllable coefficient thermal expansion materials by compounding them with positive thermal expansion materials. The research on NTE properties at the nanoscales is the basis and premise for the realization of high-quality composites. Here, using first-principles calculations, we take a typical open framework material ScF3 as an example to study a new NTE mechanism at the nanoscale, which involves edge and size effects, as well as crystal symmetry breaking. By analyzing the vibrational modes in ultrathin ScF3 films, three effects contributing to the NTE properties are identified, namely, the acoustic mode (ZA mode) induced by surface truncation, the enhanced rotations of ScF6 octahedra in the surface layer and the suppressed rotations of ScF6 octahedra in the inner layer due to crystal symmetry breaking. With increasing thickness, the effect of the ZA mode vibration gradually weakens, while the rotations of the ScF6 octahedra in the surface and inner layers are enhanced. Ultimately, the approximately mutual compensation of these three effects makes the NTE coefficients of different thicknesses almost unchanged. Finally, we simply generalize our conclusions to zero dimensional nanoparticles. This work reveals a new NTE mechanism in low-dimensional open framework materials, which serves as a guide in designing NTE materials at the nanoscale.
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Fluorination is an effective way of tuning the physicochemical property and activity of TiO2 nanocrystallites, which usually requires a considerable amount of hydrofluoric acid (or NH4F) for a typical F/Ti molar ratio, RF, of 0.5-69.0 during synthesis. This has consequential environmental issues due to the high toxicity and hazard of the reactants. In the present work, an environmentally benign fluorination approach is demonstrated that uses only a trace amount of sodium fluoride with an RF of 10-6 during synthesis. While it maintained the desirable high surface area (102.4 m2/g), the trace-level fluorination enabled significant enhancements on photocatalytic activities (e.g., a 56% increase on hydrogen evolution rate) and heavy metal Pb(II) removal (31%) of the mesoporous TiO2. This can be attributed to enriched Ti3+ and localized spatial charge separation due to fluorination as proved by X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance spectroscopy (EPR), and density functional theory (DFT) analyses.
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Molybdenum disulfide (MoS2 ) has been widely studied as a potential earth-abundant electrocatalyst for the hydrogen-evolution reaction (HER). Defect engineering and heteroelemental doping are effective methods to enhance the catalytic activity in the HER, so exploring an efficient route to simultaneously achieve in-plane vacancy engineering and elemental doping of MoS2 is necessary. In this study, Zinc, a low-cost and moderately active metal, has been used to realize this strategy by generation of sulfur vacancies and zinc doping on MoS2 in one step. Density functional theory calculations reveal that the zinc atoms not only lower the formation energy of S vacancies, but also help to decrease ΔGH of S-vacancy sites near the Zn atoms. At an optimal zinc-reduced MoS2 (Zn@MoS2 ) example, the activated basal planes contribute to the HER activity with an overpotential of -194â mV at 10â mA cm-2 and a low Tafel slope of 78â mV/dec.
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Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here we predict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS_{2}-like (α-Te), and metastable tetragonal (ß-Te) and 2H-MoS_{2}-like (γ-Te) structures. The underlying formation mechanism is inherently rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductorlike (e.g., S). We also show that the α-Te phase can be spontaneously obtained from the magic thicknesses divisible by three layers truncated along the [001] direction of the trigonal structure of bulk Te, and both the α- and ß-Te phases possess electron and hole mobilities much higher than MoS_{2}. Furthermore, we present preliminary but convincing experimental evidence for the layering behavior of Te on HOPG substrates, and predict the importance of multivalency in the layering behavior of Se. These findings effectively extend the realm of 2D materials to group-VI elements.
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Manipulating magnetism of low-dimensional materials is of great importance for their practical applications. Here, using first-principles calculations, we report a systematic investigation of the magnetic properties of C-doped H saturated zigzag phosphorene nanoribbons (H-ZPNRs), which are rather different from those of 2D periodic systems due to the quantum size effect. First of all, we observed a greatly enhanced magnetic moment locating mainly on the C atom and also slightly on its surrounding P atoms. Our results also indicated a strong dependence of the magnetic moment of the C atom on its location, which decays from the edge to the center site of the nanoribbons with an odd-even oscillating behavior originating from Friedel oscillation in low-dimensional materials. As for the C atom on a specific location, its magnetic moment decreases gradually with increasing width of H-ZPNRs, degenerating to the 2D case. What is more, we found that both the magnitude and the oscillating behavior of the magnetic moment on the C atom can be tuned by the edge saturation atoms. In addition, the case of two C atoms co-doping H-ZPNRs was also studied, showing non-magnetic (NM), ferromagnetic (FM) and antiferromagnetic (AFM) states depending on the locations of the two C atoms. Our findings suggest a plausible route for manipulating magnetism of the sp element doped H-ZPNRs, which are expected to have potential applications in spintronics.
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Quantum growth refers to the phenomena in which the quantum mechanically confined motion of electrons in metallic wires, islands, and films determines their overall structural stability as well as their physical and chemical properties. Yet to date, there has been a lack of a unified understanding of quantum growth with respect to the dimensionality of the nanostructures as well as the valency of the constituent atoms. Based on a first-principles approach, we investigate the stability of nanowires, nanoislands, and ultrathin films of prototypical metal elements. We reveal that the Friedel oscillations generated at the edges (or surfaces) of the nanostructures cause corresponding oscillatory behaviors in their stability, leading to the existence of highly preferred lengths (or thicknesses). Such magic lengths of the nanowires are further found to depend on both the number of valence electrons and the radial size, with the oscillation period monotonously increasing for alkali and group IB metals, and monotonously decreasing for transition and group IIIA-VA metals. When the radial size of the nanowires increases to reach â¼10 Å, the systems equivalently become nanosize islands, and the oscillation period saturates to that of the corresponding ultrathin films. These findings offer a generic perspective of quantum growth of different classes of metallic nanostructures.
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Exploring the properties of noble metal atoms and nano- or subnano-clusters on the semiconductor surface is of great importance in many surface catalytic reactions, self-assembly processes, crystal growth, and thin film epitaxy. Here, the energetics and kinetic properties of a single Cu atom and previously reported Cu magic clusters on the Si(111)-(7 × 7) surface are re-examined by the state-of-the-art first-principles calculations based on density functional theory. First of all, the diffusion path and high diffusion rate of a Cu atom on the Si(111)-(7 × 7) surface are identified by mapping out the total potential energy surface of the Cu atom as a function of its positions on the surface, supporting previous experimental hypothesis that the apparent triangular light spots observed by scanning tunneling microscopy (STM) are resulted from a single Cu atom frequently hopping among adjacent adsorption sites. Furthermore, our findings confirm that in the low coverage of 0.15 monolayer (ML) the previously proposed hexagonal ring-like Cu6 cluster configuration assigned to the STM pattern is considerably unstable. Importantly, the most stable Cu6/Si(111) complex also possesses a distinct simulated STM pattern with the experimentally observed ones. Instead, an energetically preferred solid-centered Cu7 structure exhibits a reasonable agreement between the simulated STM patterns and the experimental images. Therefore, the present findings convincingly rule out the tentative six-atom model and provide new insights into the understanding of the well-defined Cu nanocluster arrays on the Si(111)-(7 × 7) surface.
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Using first-principles density functional theory calculations, we investigate the geometries, electronic structures, and thermodynamic stabilities of substitutionally doped phosphorene sheets with group III, IV, V, and VI elements. We find that the electronic properties of phosphorene are drastically modified by the number of valence electrons in dopant atoms. The dopants with an even number of valence electrons enable the doped phosphorenes to have a metallic feature, while the dopants with an odd number of valence electrons retain a semiconducting feature. This even-odd oscillating behavior is attributed to the peculiar bonding characteristics of phosphorene and the strong hybridization of sp orbitals between dopants and phosphorene. Furthermore, the calculated formation energies of various substitutional dopants in phosphorene show that such doped systems can be thermodynamically stable. These results propose an intriguing route to tune the transport properties of electronic and photoelectronic devices based on phosphorene.
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Sub-surface alloying (SSA) can be an effective approach to tuning surface functionalities. Focusing on Rh(111) as a typical substrate for graphene nucleation, we show strong modulation by SSA atoms of both the energetics and kinetics of graphene nucleation simulated by first-principles calculations. Counter-intuitively, when the sub-surface atoms are replaced by more active solute metal elements to the left of Rh in the periodic table, such as the early transition metals (TMs), Ru and Tc, the binding between a C atom and the substrate is weakened and two C atoms favor dimerization. Alternatively, when the alloying elements are the late TMs to the right of Rh, such as the relatively inert Pd and Ag, the repulsion between the two C atoms is enhanced. Such distinct results can be well addressed by the delicately modulated activities of the surface host atoms in the framework of the d-band theory. More specifically, we establish a very simple selection rule for optimizing the metal substrate for high quality graphene growth: the introduction of an early (late) solute TM in the SSA lowers (raises) the d-band center and the activity of the top-most host metal atoms, weakening (strengthening) the C-substrate binding, meanwhile both energetically and kinetically facilitating (hindering) the graphene nucleation, and simultaneously promoting (suppressing) the orientation disordering the graphene domains. Importantly, our preliminary theoretical results also show that such a simple rule is also proposed to be operative for graphene growth on the widely invoked Cu(111) catalytic substrate.
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We identify by first-principles calculations a new cubic carbon phase in I4132 (O(8)) symmetry, named K6 carbon, which has a six atom primitive cell comprising sp(3) hybridized C3 triangle rings. The structural stability is verified by phonon mode analysis. The calculated elastic constants show that the K6 carbon is a high ductile material with a density even lower than graphite. Electronic band and density of states calculations reveal that it is a metallic carbon allotrope with a high electronic density of states of â¼0.10 states/eV per atom at the Fermi level. These results broaden our understanding of the structural and electronic properties of carbon allotropes.
Assuntos
Carbono/química , Simulação por Computador , Teoria Quântica , Metais/químicaRESUMO
It remains a challenge to obtain biocompatible afterglow materials with long emission wavelengths, durable lifetimes, and good water solubility. Herein we develop a photooxidation strategy to construct near-infrared afterglow carbon nanodots with an extra-long lifetime of up to 5.9 h, comparable to that of the well-known rare-earth or organic long-persistent luminescent materials. Intriguingly, size-dependent afterglow lifetime evolution from 3.4 to 5.9 h has been observed from the carbon nanodots systems in aqueous solution. With structural/ultrafast dynamics analysis and density functional theory simulations, we reveal that the persistent luminescence in carbon nanodots is activated by a photooxidation-induced dioxetane intermediate, which can slowly release and convert energy into luminous emission via the steric hindrance effect of nanoparticles. With the persistent near-infrared luminescence, tissue penetration depth of 20 mm can be achieved. Thanks to the high signal-to-background ratio, biological safety and cancer-specific targeting ability of carbon nanodots, ultralong-afterglow guided surgery has been successfully performed on mice model to remove tumor tissues accurately, demonstrating potential clinical applications. These results may facilitate the development of long-lasting luminescent materials for precision tumor resection.
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Nanopartículas , Neoplasias , Animais , Camundongos , LuminescênciaRESUMO
The adsorption and dissociation of O2 molecules on Si(111)-(7×7) surface have been studied by first-principles calculations. Our results show that all the O2 molecular species adsorbed on Si(111)-(7×7) surface are unstable and dissociate into atomic species with a small energy barrier about 0.1 eV. The single O2 molecule adsorption tends to form an ins×2 or a new metastable ins×2* structure on the Si adatom sites and the further coming O2 molecules adsorb on those structures to produce an ad-ins×3 structure. The ad-ins×3 structure is indeed highly stable and kinetically limited for diving into the subsurface layer to form the ins×3-tri structure by a large barrier of 1.3 eV. Unlike the previous views, we find that all the ad-ins, ins×2, and ad-ins×3 structures show bright images, while the ins×2*, ins×3, and ins×3-tri structures show dark images. The proposed oxidation pathways and simulated scanning tunneling microscope images account well for the experimental results and resolve the long-standing confusion and issue about the adsorption and reaction of O2 molecules on Si(111) surface.
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We show by first-principles calculations two types of magnetic magic Mn clusters on the Si(111)-(7 × 7) surface. The first is a small triangular Mn7 cluster stabilized by the solid-centered Mn-Si3 bonds on the top layer, and the second is a large hexagonal Mn13 cluster favored by the confining potential wells of the faulted half unit cells on the Si(111) surface. These two structural models are distinct from that of the planar group-III clusters on Si(111) and produce simulated scanning tunneling microscopy images in reasonable agreement with recent experimental observations. These results offer key insights for understanding the complex energetic landscape on the Si(111)-(7 × 7) surface, which is critical to precisely controlled growth of Mn nanocluster arrays with specific size, magnetic moment, and good uniformity.
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Being chemically stable, low cost and made from abundant resources, titanium dioxide (TiO2) possesses the most desired advantages for photocatalytic applications. However, the intrinsic limits of high surface hydrogen adsorption energy, wide band gap, low separation rate and rapid recombination of the photogenerated charge carriers greatly hamper its utilization. To address these issues, the present work combines density functional theory (DFT) calculations with rational modifications of TiO2 with nickel doping and an ultra-thin shield of fluorinated carbon (FNT) for application in the photocatalytic hydrogen evolution reaction (HER). Comprehensive studies imply that the synergistic modifications not only optimize the surface H adsorption, but also facilitate the interfacial charge transfer and simultaneously prevent the photochemical and chemical corrosion of the catalysts. In good agreement with the theoretical predictions, the resulting FNT photocatalysts demonstrate an optimal HER efficiency of 13.0 mmol g-1 h-1, nearly 33-times and over three-times beyond that of the pristine TiO2 (0.4 mmol g-1 h-1) and the Ni-doped TiO2 (4.2 mmol g-1 h-1), respectively. Moreover, the composite also exhibits excellent stability with a well-reproducible HER performance over a 66-hour cyclic HER test of 15 cycles.
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Heterogeneous structures containing highly dispersed semiconductor nanoparticles on a photoactive support are effective for the photocatalytic hydrogen evolution reaction (HER). In this work, the interlayer ion-exchange and space confining nature of layered titanate nanosheets was used to embed copper ions in titanates, which were then transitioned to mesoporous CuxO/TiO2 with highly dispersed CuxO nanostructures. Both experimental and density functional theory (DFT) studies demonstrated that the fine-decoration of CuxO nanostructures and the reducible valence of the copper species enabled stable superior photocatalytic activity. The HER efficiency was enhanced to 12.45 mmol g-1 h-1 for the mesoporous CuxO/TiO2 composites in comparison to an efficiency of 0.38 mmol g-1 h-1 for the non-modified TiO2. Steady HER performances over 10 h, cyclic HER measurement over 60 h, and testing of the composite kept under ambient conditions for over one year, demonstrated excellent stability of the composite against photochemical and wet-chemical erosion.
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Surface Van Hove singularity (SVHS) triggers exciting physical phenomena distinct from the bulk. Herein, we explore the potential role of SVHS in catalysis for both CO oxidation and the hydrogen evolution reaction (HER) using the graphene/Ca2N (Gra/Ca2N) heterojunction and Pt2HgSe3 (001) surface as prototype systems. It is demonstrated that both systems with SVHS could serve as an electron bath to promote O2 adsorption and subsequent CO oxidation with low energy barriers of 0.2-0.6 eV for the Gra/Ca2N and Pt2HgSe3 (001) surface and similarly facilitate the HER with near-zero hydrogen adsorption free energy. Importantly, the catalytically active sites associated with SVHS are well-defined and distributed over the whole surface plane, and further, the chemical reactivity of SVHS can also be tuned easily via adjusting its position with respect to EF. Our study demonstrates the enabling power of SVHS and provides novel physical insights into the promising potential role of VHS in designing high-efficiency catalysts.
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We have grown the high quality single crystals of SrCdBi2successfully and investigated the physical properties systematically through measurements of magnetoresistance, Hall effect, magnetic susceptibility, and specific heat measurements. The compound is a nonmagnetic 112-type pnictide with a Bi square net layer, which is potential for hosting Dirac fermions. We found that it exhibited metallic behavior with an anomaly appearing at around 210 K. Magnetoresistance study reveal that the electronic structure of SrCdBi2is quasi-two-dimensional. At low temperatures, we observed magnetic field induced metal-to-insulator-like transition and resistivity plateau, nonsaturating quasilinear magnetoresistance, and high carrier mobility in magnetotransport measurements, which indicate the possible existence of nearly massless Dirac fermions in SrCdBi2. The anomaly at around 210 K can be observed in resistivity, Hall effect, and magnetic susceptibility, but can't be detected in heat capacity. This implies the anomaly might be caused by domain formation or disorder. We found that the nonsaturating linear magnetoresistance in SrCdBi2is likely caused by both of the quantum linear dispersion and the classical disorder. Our findings suggest that SrCdBi2is a natural experimental platform for realizing the topological properties of nonmagnetic 112-type pnictides.