High-pressure dielectric behavior of BaMoO4: a combined experimental and theoretical study.

In situ impedance measurements were employed to investigate the electrical transport properties of BaMoO4 under pressures of up to 20.0 GPa. Two anomalous changes in the electrical parameters were found, related to the pressure-induced structural phase transitions. The dielectric performance of BaMoO4 was improved by pressure. The dispersion in the real part of dielectric constant versus frequency weakens with increasing pressure. Based on the first-principles calculations, the increases of resistance with increasing pressure in the tetragonal and monoclinic phases were mainly caused by the increasing defect levels. The decrease of the relative permittivity in the tetragonal phase was attributed to pressure-induced strengthening in electronic localization around Mo atoms, which hindered the polarization of Mo-O electric dipoles.

Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO 2.

The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO2 can be improved significantly with compression. Abnormal variations in resistivity, relaxation frequency, and relative permittivity were observed at approximately 12.3 and 25.0 GPa, which can be attributed to pressure-induced tetragonal- orthorhombic-cubic structural transitions. The dielectric properties of the SnO2 nanoparticles were found to be a function of pressure, and the dielectric response was dependent on frequency and pressure. The dielectric constant and loss tangent decreased with increasing frequency. Relaxation-type dielectric behaviour dominated at low frequencies. Whereas, modulus spectra indicated that charge carrier short-range motion dominated at high frequencies.

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2.

The transition metal dichalcogenide (TMD) ReS2 is a promising material for optoelectronic devices because of its remarkable quantum yield. Pressure can effectively tune the optoelectronic properties of TMDs through control of the atomic displacement. Here, we systematically investigated the lattice and electronic structural evolutions of compressed multilayer ReS2. Both Raman spectra and first-principles calculations suggest the occurrence of an intralayer phase transition followed by an interlayer transition. A transition from one indirect to another indirect bandgap at 2.7 GPa was revealed by both high-pressure photoluminescence (PL) measurements and first-principles calculations, this behavior was elucidated by considering the fundamental relationship between lattice variation and electronic evolution. Moreover, by comparing the high-pressure behavior of MoS2 and ReS2, we demonstrated interlayer coupling plays a critical role in determining the lattice and electronic structures in compressed TMDs. Our findings suggest the potential application of ReS2 in fabricating various stacking devices with tailored properties.