Mapping the slow and fast photoresponse of field-effect transistors to terahertz and infrared radiation.

Field-effect transistors are capable of detecting electromagnetic radiation from less than 100 GHz up to very high frequencies reaching well into the infrared spectral range. Here, we report on frequency coverage of up to 30THz, thus reaching the technologically important frequency regime of CO2 lasers, using GaAs/AlGaAs high-electron-mobility transistors. A detailed study of the speed and polarization dependence of the responsivity allows us to identify a cross over of the dominant detection mechanism from ultrafast non-quasistatic rectification at low Terahertz frequencies to slow rectification based on a combination of the Seebeck and bolometric effects at high frequencies, occurring at about the boundary between the Terahertz frequency range and the infrared at 10THz.

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors.

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out. The responsivity roll-off towards higher frequencies is weaker than expected from an RC-roll-off model. Terahertz pulses with peak powers of up to 65kW have been recorded without damaging the devices.