A Novel Ferroelectric Rashba Semiconductor.

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1- xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.

Fermiology of Chiral Cadmium Diarsenide CdAs2, a Candidate for Hosting Kramers-Weyl Fermions.

Nonmagnetic chiral crystals are a new class of systems hosting Kramers-Weyl Fermions, arising from the combination of structural chirality, spin-orbit coupling (SOC), and time-reversal symmetry. These materials exhibit nontrivial Fermi surfaces with SOC-induced Chern gaps over a wide energy range, leading to exotic transport and optical properties. In this study, we investigate the electronic structure and transport properties of CdAs2, a newly reported chiral material. We use synchrotron-based angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT) to determine the Fermiology of the (110)-terminated CdAs2 crystal. Our results, together with complementary magnetotransport measurements, suggest that CdAs2 is a promising candidate for novel topological properties protected by the structural chirality of the system. Our work sheds light on the details of the Fermi surface and topology for this chiral quantum material, providing useful information for engineering novel spintronic and optical devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers.

Electronic Band Structure and Surface States in Dirac Semimetal LaAgSb2.

LaAgSb2 is a Dirac semimetal showing charge density wave (CDW) order. Previous angle-resolved photoemission spectroscopy (ARPES) results suggest the existence of the Dirac-cone-like structure in the vicinity of the Fermi level along the Γ-M direction. This paper is devoted to a complex analysis of the electronic band structure of LaAgSb2 by means of ARPES and theoretical studies within the ab initio method as well as tight binding model formulation. To investigate the possible surface states, we performed the direct DFT slab calculation and the surface Green function calculation for the (001) surface. The appearance of the surface states, which depends strongly on the surface, points to the conclusion that LaSb termination is realized in the cleaved crystals. Moreover, the surface states predicted by our calculations at the Γ and X points are found by ARPES. Nodal lines, which exist along the X-R and M-A paths due to crystal symmetry, are also observed experimentally. The calculations reveal other nodal lines, which originate from the vanishing of spin-orbit splitting and are located at the X-M-A-R plane at the Brillouin zone boundary. In addition, we analyze the band structure along the Γ-M path to verify whether Dirac surface states can be expected. Their appearance in this region is not confirmed.

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators.

We present STM/STS, ARPES and magnetotransport studies of the surface topography and electronic structure of pristine Bi2Se3 in comparison to Bi1.96Mg0.04Se3 and Bi1.98Fe0.02Se3. The topography images reveal a large number of complex, triangle-shaped defects at the surface. The local electronic structure of both the defected and non-defected regions is examined by STS. The defect-related states shift together with the Dirac point observed in the undefected area, suggesting that the local electronic structure at the defects is influenced by doping in the same way as the electronic structure of the undefected surface. Additional information about the electronic structure of the samples is provided by ARPES, which reveals the dependence of the bulk and surface electronic bands on doping, including such parameters as the Fermi wave vector. The subtle changes of the surface electronic structure by doping are verified with magneto-transport measurements at low temperatures (200 mK) allowing the detection of Shubnikov-de Haas (SdH) quantum oscillations.

Electronic properties of TaAs2topological semimetal investigated by transport and ARPES.

We have performed electron transport and angle-resolved photo-emission spectroscopy (ARPES) measurements on single crystals of transition metal dipnictide TaAs2cleaved along the (2¯01) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between magnetic field and the [2¯01] direction. The results indicate elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved (2¯01) surface and it was found that bulk states pockets at constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level (FL) is increased, which is due to a small n-doping of the samples. This shifts the FL closer to the Dirac point, allowing investigating the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.