RESUMO
Heteroanionic materials show promising potential as 2D semiconductors due to their tunable band gaps, making them excellent candidates for photocatalytic water splitting applications. We conducted detailed theoretical and experimental analysis of two selected materials by synthesizing crystals through chemical vapor transport and investigating the impact of anion variation on crystal structure and properties. Using powder X-ray diffraction and convergent beam electron diffraction, we elucidated the non-centrosymmetric space groups of these compounds. Thermochemical studies revealed the influence of the crystal structure on the decomposition points of both compounds. Theoretical investigations predict that both materials are indirect bandgap semiconductors, which is confirmed by electron energy loss spectroscopy and photoluminescence studies.
RESUMO
The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi2 Te4 and MnBi4 Te7 benchmark the (MnBi2 Te4 )(Bi2 Te3 )n family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi2 Te4 septuple layers (SLs). However, the QAHE realization is complicated in MnBi2 Te4 and MnBi4 Te7 due to the substantial antiferromagnetic (AFM) coupling between the SLs. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SLs with an increasing number n of Bi2 Te3 quintuple layers (QLs). However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, robust FM properties in MnBi6 Te10 (n = 2) with Tc ≈ 12 K are demonstrated and their origin is established in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. The measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. This investigation thus consolidates the MnBi6 Te10 system as perspective for the QAHE at elevated temperatures.