RESUMO
Chemical doping is a ubiquitously applied strategy to improve the charge-transfer and conductivity characteristics of spiro-OMeTAD, a hole-transporting material (HTM) used widely in solution-processed perovskite solar cells (PSCs). Cobalt(III) complexes are commonly employed HTM dopants, whose major role is to oxidize spiro-OMeTAD to provide p-doping for improved conductivity. The present work discloses additional, previously unknown important functions of cobalt complexes in the HTM films that influence the photovoltaic performance. Specifically, it is demonstrated that commercial p-dopant FK269 (bis(2,6-di(1H-pyrazol-1-yl)pyridine) cobalt(III) tris(bis(trifluoromethylsulfonyl)imide)) reduces the interfacial recombination and alleviates the decomposition of the perovskite layer under the action of tert-butylpyridine and lithium bis(trifluoromethanesulfonyl)imide. These effects are demonstrated for 1 cm2 perovskite solar cells that achieve a stabilized power conversion efficiency of 19% under 1 sun irradiation.
RESUMO
Electronic equilibration at the metal-organic interface, leading to equalization of the Fermi levels, is a key process in organic optoelectronic devices. How the energy levels are set across the interface determines carrier extraction at the contact and also limits the achievable open-circuit voltage under illumination. Here, we report an extensive investigation of the cathode energy equilibration of organic bulk-heterojunction solar cells. We show that the potential to balance the mismatch between the cathode metal and the organic layer Fermi levels is divided into two contributions: spatially extended band bending in the organic bulk and voltage drop at the interface dipole layer caused by a net charge transfer. We scan the operation of the cathode under a varied set of conditions, using metals of different work functions in the range of â¼2 eV, different fullerene acceptors, and several cathode interlayers. The measurements allow us to locate the charge-neutrality level within the interface density of sates and calculate the corresponding dipole layer strength. The dipole layer withstands a large part of the total Fermi level mismatch when the polymer:fullerene blend ratio approaches â¼1:1, producing the practical alignment between the metal Fermi level and the charge-neutrality level. Origin of the interface states is linked with fullerene reduced molecules covering the metal contact. The dipole contribution, and consequently the band bending, is highly sensitive to the nature and amount of fullerene molecules forming the interface density of states. Our analysis provides a detailed picture of the evolution of the potentials in the bulk and the interface of the solar cell when forward voltage is applied or when photogeneration takes place.