Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Vibrational Transitions.

We determine the infrared absorption spectra of a gas due to evanescent plasmonic electromagnetic fields in a system where surface interactions (physisorption and chemisorption) are demonstrably negligible. The plasmonic host material, the degenerate semiconductor CdO:Dy, has high mobility (366-450 cm2/(V s)) and carrier density ((0.6-3.5) × 1020 cm-3), and therefore supports low-loss surface plasmon resonances in the mid-IR. This high-mobility layer gives the highest resolution observed in a plasmonic conducting material in the infrared, higher than that of gold and rivaling that of silver. The high resolution permits a new understanding of the nature of the interaction of emerging fields with molecular transitions. Using different carrier concentrations, the resonance condition of the surface plasmon polariton (SPP) frequency (ωSPP) and N2O vibrational absorption spectral frequency (ωN2O) can be controlled, thereby allowing a critical test of field-molecule interactions. Experiment and theory both indicate a dispersive N2O line shape for ωSPP < ωN2O, an absorptive line shape for ωSPP < ωN2O, and an abrupt change between the two when the resonance condition ωSPP < ωN2O is reached. A first-order expansion of the Airy equation describes this behavior analytically. The SPP surface enhancement is 6.8 ± 0.5 on-resonance, lower than enhancements observed in other systems, but in agreement with recent quantitative reports of surface enhanced infrared reflection absorption spectroscopy (SEIRA). Our results show that interactions of infrared SPPs with molecular vibrations are in the weak coupling limit, and that enhancements comparable those reported for noble metals can be achieved.

Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model.

We present experimental measurements of the thermal boundary conductance (TBC) from 78-500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data provides an assessment of the underlying assumptions driving phonon gas-based models, such as the diffuse mismatch model (DMM), and atomistic Green's function (AGF) formalisms used to predict TBC. Our measurements, when compared to previous experimental data, suggest that TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the '"vibrational mismatch"' concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as 490[+150,-110] MW m-2 K-1. The disagreement among the DMM and AGF, and the experimental data at elevated temperatures, suggests a non-negligible contribution from other types of modes that are not accounted for in the fundamental assumptions of these harmonic based formalisms, which may rely on anharmonicity. Given the high quality of these ZnO/GaN interfaces, these results provide an invaluable, critical, and quantitative assessment of the accuracy of assumptions in the current state of the art computational approaches used to predict phonon TBC across interfaces.

Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics.

The interest in plasmonic technologies surrounds many emergent optoelectronic applications, such as plasmon lasers, transistors, sensors and information storage. Although plasmonic materials for ultraviolet-visible and near-infrared wavelengths have been found, the mid-infrared range remains a challenge to address: few known systems can achieve subwavelength optical confinement with low loss in this range. With a combination of experiments and ab initio modelling, here we demonstrate an extreme peak of electron mobility in Dy-doped CdO that is achieved through accurate 'defect equilibrium engineering'. In so doing, we create a tunable plasmon host that satisfies the criteria for mid-infrared spectrum plasmonics, and overcomes the losses seen in conventional plasmonic materials. In particular, extrinsic doping pins the CdO Fermi level above the conduction band minimum and it increases the formation energy of native oxygen vacancies, thus reducing their populations by several orders of magnitude. The substitutional lattice strain induced by Dy doping is sufficiently small, allowing mobility values around 500 cm(2) V(-1) s(-1) for carrier densities above 10(20) cm(-3). Our work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are ideal candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides.

Entropy-stabilized oxides.

Configurational disorder can be compositionally engineered into mixed oxide by populating a single sublattice with many distinct cations. The formulations promote novel and entropy-stabilized forms of crystalline matter where metal cations are incorporated in new ways. Here, through rigorous experiments, a simple thermodynamic model, and a five-component oxide formulation, we demonstrate beyond reasonable doubt that entropy predominates the thermodynamic landscape, and drives a reversible solid-state transformation between a multiphase and single-phase state. In the latter, cation distributions are proven to be random and homogeneous. The findings validate the hypothesis that deliberate configurational disorder provides an orthogonal strategy to imagine and discover new phases of crystalline matter and untapped opportunities for property engineering.