Compact thin film lithium niobate folded intensity modulator using a waveguide crossing.

A small footprint, low voltage and wide bandwidth electro-optic modulator is critical for applications ranging from optical communications to analog photonic links, and the integration of thin-film lithium niobate with photonic integrated circuit (PIC) compatible materials remains paramount. Here, a hybrid silicon nitride and lithium niobate folded electro-optic Mach Zehnder modulator (MZM) which incorporates a waveguide crossing and 3 dB multimode interference (MMI) couplers for splitting and combining light is reported. This modulator has an effective interaction region length of 10 mm and shows a DC half wave voltage of roughly 4.0 V, or a modulation efficiency (Vπ ·L) of roughly 4 V·cm. Furthermore, the device demonstrates a power extinction ratio of roughly 23 dB and shows .08 dB/GHz optical sideband power roll-off with index matching fluid up to 110 GHz, with a 3-dB bandwidth of 37.5 GHz.

Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform.

A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach-Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.

High-performance racetrack resonator in silicon nitride - thin film lithium niobate hybrid platform.

In this paper, we propose an electro-optic modulator design in a hybrid Si3N4-X-cut LiNbO3. The modulator is based on a modified racetrack resonator and performs at both DC and heightened frequencies. Here the driving electrodes are defined along the straight section of the racetrack. This is done to maximize modulation and minimize modulation-cancelation that occurs in a conventional X-cut LiNbO3-based resonator due to the directional change of the electric field in the micro-ring. The single bus racetrack resonator is formed in a hybrid Si3N4-LiNbO3 platform, to guide the optical mode. The fabricated device is characterized and has a measured tunability and intrinsic quality factor (Q) of 2.9 pm/V and 1.3 × 105, respectively. In addition, the proposed racetrack device exhibits enhanced electro-optic conversion efficiency at modulation frequencies that match with the racetrack's optical free spectral range (FSR). For example, at the modulation frequency of 25 GHz, which corresponds to the fabricated device's optical FSR frequency, a ∼10 dB increase in electro-optic conversion efficiency is demonstrated. With the enhancement, our measured device demonstrates a conversion efficiency comparable to non-resonant thin-film LiNbO3 devices that possess RF electrodes that are 10 times longer in length.

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator.

This Letter presents, to the best of our knowledge, the first hybrid Si3N4-LiNbO3-based tunable microring resonator where the waveguide is formed by loading a Si3N4 strip on an electro-optic (EO) material of X-cut thin-film LiNbO3. The developed hybrid Si3N4-LiNbO3 microring exhibits a high intrinsic quality factor of 1.85×105, with a ring propagation loss of 0.32 dB/cm, resulting in a spectral linewidth of 13 pm, and a resonance extinction ratio of ∼27 dB within the optical C-band for the transverse electric mode. Using the EO effect of LiNbO3, a 1.78 pm/V resonance tunability near 1550 nm wavelength is demonstrated.

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.

We present a thin film crystal ion sliced (CIS) LiNbO3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm-1. The design, fabrication, and characterization of our broadband modulator is presented in this work.

Vertical mode transition in hybrid lithium niobate and silicon nitride-based photonic integrated circuit structures.

This Letter presents an optical mode transition structure for use in Si3N4/LiNbO3-based hybrid photonics. A gradual modal transition from a Si3N4 waveguide to a hybrid Si3N4/LiNbO3 waveguide is achieved by etching a terrace structure into the sub-micrometer thick LiNbO3 film. The etched film is then bonded to predefined low pressure chemical vapor deposition Si3N4 waveguides. Herein we analyze hybrid optical devices both with and without the aforementioned mode transition terrace structure. Experimental and simulated results indicate that inclusion of the terrace significantly improves mode transition compared to an abrupt transition, i.e., a 1.78 dB lower mode transition loss compared to the abrupt transition. The proposed transition structure is also applied to the design of hybrid Si3N4-LiNbO3 micro-ring resonators. A high-quality factor (Q) resonator is demonstrated with the terrace transition which mitigates undesired resonances.

Photonic probing of radio waves for k-space tomography.

We harness coherent optical processing to simultaneously sense the angle of arrival and the frequency of radio waves. Signals captured by a distributed antenna array are up-converted to optical domain using electro-optic modulators coupled to individual antennas. Employing a common laser source to feed all the modulators ensures spatially coherent up-conversion of radio-frequency (RF) waves to optical beams carried by optical fibers. Fiber-length dispersion extends the spatial aperture of the distributed antenna array into the temporal dimension. The interference of beams emanating from the fibers is captured by a CCD and used to computationally reconstruct RF waves in k-space.

110 GHz CMOS compatible thin film LiNbO3 modulator on silicon.

In this paper we address a significant limitation of silicon as an optical material, namely, the upper bound of its potential modulation frequency. This arises due to finite carrier mobility, which fundamentally limits the frequency response of all-silicon modulators to about 60 GHz. To overcome this limitation, another material must be integrated with silicon to provide increased operational bandwidths. Accordingly, this paper proposes and demonstrates the integration of a thin LiNbO3 device layer with silicon and a novel tuning process that matches the propagation velocities between the propagating radio-frequency (RF) and optical waves. The resulting lithium niobate on silicon (LiNOS) modulator is demonstrated to operate from DC to 110 GHz.

Thin LiNbO3 on insulator electro-optic modulator.

This Letter presents a method for the fabrication and integration of a thin LiNbO3 substrate with a Si handle wafer. An inverted ridge structure guides a single optical mode in an electro-optic modulator fabricated on a mechanically thinned substrate. To define an optical waveguide, a ridge structure is first patterned on a 500 µm thick X-cut LiNbO3 wafer; then a low dielectric constant adhesive layer is used to bond the etched LiNbO3 to Si. The LiNbO3 is mechanically thinned to 4 µm, and planar electrodes are patterned. Experimental results demonstrating modulation with a V(π)L of 7.1 V-cm were shown, optical loss was low enough, and film quality high enough, to enable an interaction length of 0.8 cm.

Improved configuration and reduction of phase noise in a narrow linewidth ultrawideband optical RF source.

In this Letter, we report on the improved configuration of a widely tunable optical RF generation system, particularly for the generation of low-frequency RF, as well as the reduction of phase noise in that same system. Using an amplitude modulator, a simplified system design was demonstrated with fewer components and improved phase noise performance, especially at RF frequencies below ∼36 GHz. Excess phase noise due to acoustic vibrations of the optical fibers was also successfully eliminated by mechanical isolation. A minimum phase noise of -124 dBc/Hz at 10 kHz offset was demonstrated at 4 GHz.

Full spectrum millimeter-wave modulation.

In recent years, the development of new lithium niobate electro-optic modulator designs and material processing techniques have contributed to support the increasing need for faster optical networks by considerably extending the operational bandwidth of modulators. In an effort to provide higher bandwidths for future generations of networks, we have developed a lithium niobate electro-optic phase modulator based on a coplanar waveguide ridged structure that operates up to 300 GHz. By thinning the lithium niobate substrate down to less than 39 µm, we are able to eliminate substrate modes and observe optical sidebands over the full millimeter-wave spectrum.

High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks.

We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode.

Free-carrier absorption modulation in silicon nanocrystal slot waveguides.

Free-carrier absorption (FCA) has proven to be an important obstacle in the development of a silicon-based laser; however, FCA may serve as a potential advantage in active silicon-based switches or modulators. In this work, we present FCA modulation in slot waveguides with silicon nanocrystals (Si-ncs) embedded in SiO(2) as the low-index slot material. Slot waveguides were fabricated with and without Si-ncs, and the presence of Si-ncs was shown to increase the pump-induced FCA loss in the waveguides by a factor of 4.5. We modeled the Si-nc material using a four-level rate equation analysis to estimate the excited population of Si-ncs, allowing us to extract a value of 2.6 × 10(-17) cm(2) for the FCA cross section of the Si-nc material.

Comparison of raised-microdisk whispering-gallery-mode characterization techniques.

We compare the two prevailing raised-microdisk whispering-gallery-mode (WGM) characterization techniques, one based on coupling emission to a tapered fiber and the other based on collecting emission in the far field. We applied both techniques to study WGMs in Si nanocrystal raised microdisks and observed dramatically different behavior. We explain this difference in terms of the radiative bending loss on which the far-field collection technique relies and discuss the regimes of operation in which each technique is appropriate.

Phase modulation using dual split ring resonators.

In this paper, we studied phase modulation numerically using metamaterials such as stacked structures of dual split ring resonators (DSRRs). To demonstrate the modulation, a vertical and a planar design were considered, where the wave vectors were parallel and perpendicular to the proposed structures creating 70 degrees and 80 degrees of phase change, respectively. In both of the designs modulation was brought about by changing the effective index of the structure through switching between the open and short states of the DSRRs while maintaining high transmission. One of the attractive features of our design was the thin layers of DSRRs, where for the vertical and planar models the DSRRs layers were 5 mm and 2.28 mm respectively. The numerical results obtained by simulation matched well with the theoretical prediction.

Fabrication and characterization of optimized corner-cut square microresonators.

In this paper we report the fabrication and characterization of waveguide coupled square resonators with modified corners, in particular the corner-cut square resonator. We employ rigorous FDTD analysis to identify an optimal corner-cut length and compare this with our experimental findings. Two- and three dimensional FDTD analysis is also used to optimize the coupling gap and the width of the coupling waveguide. Fabrication of the square microresonators on silicon-on-insulators by conventional E-beam lithography and dry etching techniques will be discussed in detail. The characterization of these corner-cut square microresonators shows good performance and excellent agreement with the rigorous electromagnetic simulations.

Electromagnetic modeling of active silicon nanocrystal waveguides.

In this paper we propose an electromagnetic analysis of active silicon nano-crystal (Si-nc) waveguide devices. To account for the nonlinearity in the active medium we introduce a four level rate equation model whose parameters are based on experimentally reported material properties. The electromagnetic polarization serves to couple the quantum mechanical and electromagnetic behavior within the ADE-FDTD scheme. The developed modeling tool is used to simulate waveguide amplifiers, enhanced spontaneous emission microcavities, and the temporal lasing dynamics of active Si-nc based devices.

Thin film solar cell design based on photonic crystal and diffractive grating structures.

In this paper we present novel light trapping designs applied to multiple junction thin film solar cells. The new designs incorporate one dimensional photonic crystals as band pass filters that reflect short light wavelengths (400 - 867 nm) and transmit longer wavelengths(867 -1800 nm) at the interface between two adjacent cells. In addition, nano structured diffractive gratings that cut into the photonic crystal layers are incorporated to redirect incoming waves and hence increase the optical path length of light within the solar cells. Two designs based on the nano structured gratings that have been realized using the scattering matrix and particle swarm optimization methods are presented. We also show preliminary fabrication results of the proposed devices.

Lasing dynamics of a silicon photonic crystal microcavity.

In this paper we propose a novel silicon microcavity design based on the dispersion engineered photonic crystals (PhCs). With the unique self-collimation property of PhCs, we optimize the passive cavity by tuning the design parameters, such as coupling gap size and array size, to achieve higher Q factor and drop efficiency. Highest cavity mode below the band edge is of particular interest. The strong mode confinement in the low index active material offers an opportunity to realize a lasing mechanism. To investigate the lasing dynamics we introduce the rate equations of atomic system into the electromagnetic polarization to fully describe the nonlinearity of active medium. With these auxiliary differential equations we solve the time evolutions of the electromagnetic waves and atomic populations by using the FDTD method.

Electromagnetic simulation of quantum well structures.

We present an auxiliary differential equation Finite-difference Time-domain (ADE-FDTD) approach to numerically model the wave propagation within a gain or absorbing medium such as quantum well structures. Start from traditional quantum electronics theory, the macroscopic susceptibility of the semiconductor is derived and expressed by a multiple-Lorentz-like model based on Prony's method. With the auxiliary differential equation method each Lorentz-like model can be simulated in the time domain and the induced polarization is then determined by summing all the models. By incorporating the induced polarization into the time-domain Maxwell's equations, electromagnetic wave propagation in the quantum well medium can be accurately modeled using the FDTD method.