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1.
Opt Express ; 24(12): 13204-9, 2016 Jun 13.
Artigo em Inglês | MEDLINE | ID: mdl-27410337

RESUMO

We report the first closed-loop operation of a 100 Gbps polarization-insensitive, 4-channel wavelength-tracking WDM receiver in silicon photonics platform. Error-free operation is achieved with input polarization scrambling over input wavelength change of 4.5 nm using efficient thermal tuning of Si microring demux, corresponding to greater than 60°C fluctuation in temperature.

2.
Opt Express ; 24(19): 21454-62, 2016 Sep 19.
Artigo em Inglês | MEDLINE | ID: mdl-27661885

RESUMO

We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

3.
Opt Express ; 23(3): 3717-20, 2015 Feb 09.
Artigo em Inglês | MEDLINE | ID: mdl-25836224

RESUMO

This focus issue is a collection of 17 invited papers showcasing the recent advances and the future challenges of optical interconnect technology. These papers represent multiple key areas that include the enabling devices and components, advances in the system and sub-system technologies as well as networking and its applications.

4.
Opt Express ; 23(9): 12079-88, 2015 May 04.
Artigo em Inglês | MEDLINE | ID: mdl-25969296

RESUMO

A Si/III-V hybrid laser has been a highly sought after device for energy-efficient and cost-effective high-speed silicon photonics communication. We present a high wall-plug efficiency external-cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III-V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide-coupled wall-plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single-mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof-of-concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode-hop-free operation in a packaged external-cavity hybrid laser as bias current was varied by 60mA.

5.
Opt Express ; 23(10): 13172-84, 2015 May 18.
Artigo em Inglês | MEDLINE | ID: mdl-26074570

RESUMO

We report on a packaged prototype of a WDM photonic transceiver. It is an all-solid state hybrid assembly based on 130nm SOI photonic circuitry integrated with a 40nm CMOS VLSI driver. Our prototype supports eight tunable WDM channels operating at 10Gb/s, each capable of both transmitting and receiving data on the same chip. We discuss two options to close the link using the optical fiber or a waveguide bridge chip. We provide integration details and supporting link measurement data to describe packaged photonic module and its power efficient functionality with its on-chip power per channel averaging 1.3pJ/bit, excluding off-chip laser electrical power.

6.
Opt Express ; 23(10): 12808-22, 2015 May 18.
Artigo em Inglês | MEDLINE | ID: mdl-26074535

RESUMO

We describe a multiwavelength hybrid-integrated solid-state link on a 3 µm silicon-on-insulator (SOI) nanophotonic platform. The link spans three chips and employs germanium-silicon electroabsorption waveguide modulators, silicon transport waveguides, echelle gratings for multiplexing and demultiplexing, and pure germanium waveguide photo-detectors. The 8λ WDM Tx and Rx components are interconnected via a routing "bridge" chip using edge-coupled optical proximity communication. The packaged, retimed digital WDM link is demonstrated at 10 Gb/s and 10(-12) BER, with three wavelength channels consuming an on-chip power below 1.5 pJ/bit, excluding the external laser power.

7.
Opt Express ; 22(10): 12628-33, 2014 May 19.
Artigo em Inglês | MEDLINE | ID: mdl-24921379

RESUMO

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

8.
Opt Express ; 22(7): 7678-85, 2014 Apr 07.
Artigo em Inglês | MEDLINE | ID: mdl-24718143

RESUMO

A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

9.
Opt Express ; 21(26): 32425-31, 2013 Dec 30.
Artigo em Inglês | MEDLINE | ID: mdl-24514836

RESUMO

We demonstrate a hybrid III-V/SOI laser by vertically coupling a III-V RSOA chip with a SOI-CMOS chip containing a tunable wavelength selective reflector. We report a waveguide-coupled wall-plug-efficiency of 5.5% and output power of 10 mW. A silicon resistor-based microheater was integrated to thermally tune a ring resonator for precise lasing wavelength control. A high tuning efficiency of 2.2 nm/mW over a range of 18 nm was achieved by locally removing the SOI handler substrate. C-band single mode lasing was confirmed with a side mode suppression ratio of 35 dB. This grating coupler based vertical integration approach can be scaled up in two dimensions for efficient multi-wavelength sources in silicon photonics.

10.
Opt Express ; 20(10): 11478-86, 2012 May 07.
Artigo em Inglês | MEDLINE | ID: mdl-22565767

RESUMO

We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 µW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.

11.
Opt Express ; 20(24): 26345-50, 2012 Nov 19.
Artigo em Inglês | MEDLINE | ID: mdl-23187489

RESUMO

We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 µm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.


Assuntos
Amplificadores Eletrônicos , Germânio/química , Luz , Dispositivos Ópticos , Semicondutores , Ressonância de Plasmônio de Superfície/instrumentação , Desenho Assistido por Computador , Desenho de Equipamento , Humanos
12.
Opt Express ; 20(11): 12035-9, 2012 May 21.
Artigo em Inglês | MEDLINE | ID: mdl-22714189

RESUMO

We report optical waveguides up to one meter long with 0.026 dB/cm loss fabricated in a 300nm thick SOI CMOS process. Combined with tight bends and compact interlayer grating couplers, we demonstrate a complete toolbox for ultralow-loss, high-density waveguide routing for macrochip interconnects.


Assuntos
Semicondutores , Ressonância de Plasmônio de Superfície/instrumentação , Telecomunicações/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento
13.
Opt Express ; 19(21): 20435-43, 2011 Oct 10.
Artigo em Inglês | MEDLINE | ID: mdl-21997052

RESUMO

We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 µm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 µm2 footprint.

14.
Opt Express ; 19(6): 5172-86, 2011 Mar 14.
Artigo em Inglês | MEDLINE | ID: mdl-21445153

RESUMO

Using low parasitic microsolder bumping, we hybrid integrated efficient photonic devices from different platforms with advanced 40 nm CMOS VLSI circuits to build ultra-low power silicon photonic transmitters and receivers for potential applications in high performance inter/intra-chip interconnects. We used a depletion racetrack ring modulator with improved electro-optic efficiency to allow stepper optical photo lithography for reduced fabrication complexity. Integrated with a low power cascode 2 V CMOS driver, the hybrid silicon photonic transmitter achieved better than 7 dB extinction ratio for 10 Gbps operation with a record low power consumption of 1.35 mW. A received power penalty of about 1 dB was measured for a BER of 10(-12) compared to an off-the-shelf lightwave LiNOb3 transmitter, which comes mostly from the non-perfect extinction ratio. Similarly, a Ge waveguide detector fabricated using 130 nm SOI CMOS process was integrated with low power VLSI circuits using hybrid bonding. The all CMOS hybrid silicon photonic receiver achieved sensitivity of -17 dBm for a BER of 10(-12) at 10 Gbps, consuming an ultra-low power of 3.95 mW (or 395 fJ/bit in energy efficiency). The scalable hybrid integration enables continued photonic device improvements by leveraging advanced CMOS technologies with maximum flexibility, which is critical for developing ultra-low power high performance photonic interconnects for future computing systems.

15.
Opt Express ; 18(5): 5151-60, 2010 Mar 01.
Artigo em Inglês | MEDLINE | ID: mdl-20389528

RESUMO

We report the first compact silicon CMOS 1x4 tunable multiplexer/ demultiplexer using cascaded silicon photonic ring-resonator based add/drop filters with a radius of 12 microm, and integrated doped-resistor thermal tuners. We measured an insertion loss of less than 1 dB, a channel isolation of better than 16 dB for a channel spacing of 200 GHz, and a uniform 3 dB pass band larger than 0.4 nm across all four channels. We demonstrated accurate channel alignment to WDM ITU grid wavelengths using integrated silicon heaters with a tuning efficiency of 90 pm/mW. Using this device in a 10 Gbps data link, we observed a low power penalty of 0.6 dB.

16.
Opt Express ; 18(18): 19055-63, 2010 Aug 30.
Artigo em Inglês | MEDLINE | ID: mdl-20940799

RESUMO

We demonstrate spectral tunability for microphotonic add-drop filters manufactured as ring resonators in a commercial 130 nm SOI CMOS technology. The filters are provisioned with integrated heaters built in CMOS for thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the SOI handler substrate under the device footprint using a bulk silicon micromachining process. An overall ~20x increase in the tuning efficiency has been demonstrated with a 100 µm radius ring as compared to a pre-micromachined device. A total of 3.9 mW of applied tuning power shifts the filter resonant peak across one free spectral node of the device. The Q-factor of the resonator remains unchanged after the co-integration process and hence this device geometry proves to be fully CMOS compatible. Additionally, after the cointegration process our result of 2π shift with 3.9 mW power is among the best tuning performances for this class of devices. Finally, we examine scaling the tuning efficiency versus device footprint to develop a different performance criterion for an easier comparison to evaluate thermal tuning. Our criterion is defined as the unit of power to shift the device resonance by a full 2π phase shift.

17.
J Nanosci Nanotechnol ; 10(3): 1616-25, 2010 Mar.
Artigo em Inglês | MEDLINE | ID: mdl-20355548

RESUMO

We present an advanced wavelength-division multiplexing point-to-point network enabled by silicon nanophotonic devices. This network offers strictly non-blocking all-to-all connectivity while maximizing bisection bandwidth, making it ideal for multi-core and multi-processor interconnections. We introduce one of the key components, the nanophotonic grating coupler, and discuss, for the first time, how this device can be useful for practical implementations of the wavelength-division multiplexing network using optical proximity communications. Finite difference time-domain simulation of the nanophotonic grating coupler device indicates that it can be made compact (20 microm x 50 microm), low loss (3.8 dB), and broadband (100 nm). These couplers require subwavelength material modulation at the nanoscale to achieve the desired functionality. We show that optical proximity communication provides unmatched optical I/O bandwidth density to electrical chips, which enables the application of wavelength-division multiplexing point-to-point network in macrochip with unprecedented bandwidth-density. The envisioned physical implementation is discussed. The benefits of such an interconnect network include a 5-6x improvement in latency when compared to a purely electronic implementation. Performance analysis shows that the wavelength-division multiplexing point-to-point network offers better overall performance over other optical network architectures.

18.
Opt Express ; 16(19): 15052-8, 2008 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-18795042

RESUMO

Optical proximity communication (OPxC) with reflecting mirrors is presented. Direct optical links are demonstrated for silicon chips with better than -2.5dB coupling loss, excluding surface losses. OPxC is a true broadband solution with little impairment to the signal integrity for high-speed optical transmission. With wavelength division multiplexing (WDM) enabled OPxC, very high bandwidth density I/O, orders of magnitude higher than the traditional electrical I/O, can be achieved for silicon chips.


Assuntos
Desenho Assistido por Computador , Lentes , Modelos Teóricos , Fotometria/instrumentação , Silício/química , Telecomunicações/instrumentação , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento
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