Incompatibility of Pure SnO2 Thin Films for Room-Temperature Gas Sensing Application.

Despite the high sensitivity and selectivity, the high operating temperature required for activation energy of tin oxide (SnO2) still stands as a drawback for SnO2 based gas sensors. In this work, the SnO2 thin films were deposited through spray pyrolysis and were subjected to gas sensing at 27 °C (room temperature) towards different gases. The films exhibited a consistently low response of approximately 1 when tested to various VOCs. The type, concentration, and mobility of charge carriers were determined from the Hall measurements. The high carrier concentration accompanied by poor mobility and grain boundary scattering is supposed to hinder its performance at room temperature. The obtained film had spherical morphology, which lead to grain boundary scatterings and decreased the mobility of carriers.

A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)2 Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application.

As a well-explored chalcopyrite material, copper gallium sulfide CGS has been considered a potential material for solar cell absorber layers. However, its photovoltaic attributes still require to be improved. In this research, a novel chalcopyrite material, copper gallium sulfide telluride CGST, has been deposited and verified as a thin film absorber layer to fabricate high-efficiency solar cells by experimental testing and numerical simulations. The results display the intermediate band formation in CGST with incorporation of Fe ions. Electrical studies showed enhancement in mobility from 1.181 to 1.473 cm2 V-1 s-1 and conductivity from 2.182 to 5.952 S cm-1 for pure and 0.08 Fe-substituted thin films. The I-V curves display the photoresponse and ohmic nature of the deposited thin films, and the maximum photoresponsivity (0.109 A W-1) was observed for 0.08 Fe-substituted films. Theoretical simulation of the prepared solar cells was carried out using SCAPS-1D software, and the obtained efficiency displayed an increasing trend from 6.14 to 11.07% as the Fe concentration increased from 0.0 to 0.08. This variation in efficiency is attributed to the decrease in bandgap (2.51-1.94 eV) and the formation of an intermediate band in CGST with Fe substitution, which is evidenced in UV-vis spectroscopy. The above revealed results open the way to 0.08 Fe-substituted CGST as a promising candidate as a thin film absorber layer in solar photovoltaic technology.