Collapse of long-range charge order tracked by time-resolved photoemission at high momenta.

Intense femtosecond (10(-15) s) light pulses can be used to transform electronic, magnetic and structural order in condensed-matter systems on timescales of electronic and atomic motion. This technique is particularly useful in the study and in the control of materials whose physical properties are governed by the interactions between multiple degrees of freedom. Time- and angle-resolved photoemission spectroscopy is in this context a direct and comprehensive, energy- and momentum-selective probe of the ultrafast processes that couple to the electronic degrees of freedom. Previously, the capability of such studies to access electron momentum space away from zero momentum was, however, restricted owing to limitations of the available probing photon energy. Here, using femtosecond extreme-ultraviolet pulses delivered by a high-harmonic-generation source, we use time- and angle-resolved photoemission spectroscopy to measure the photoinduced vaporization of a charge-ordered state in the potential excitonic insulator 1T-TiSe(2 )(refs 12, 13). By way of stroboscopic imaging of electronic band dispersions at large momentum, in the vicinity of the edge of the first Brillouin zone, we reveal that the collapse of atomic-scale periodic long-range order happens on a timescale as short as 20 femtoseconds. The surprisingly fast response of the system is assigned to screening by the transient generation of free charge carriers. Similar screening scenarios are likely to be relevant in other photoinduced solid-state transitions and may generally determine the response times. Moreover, as electron states with large momenta govern fundamental electronic properties in condensed matter systems, we anticipate that the experimental advance represented by the present study will be useful to study the ultrafast dynamics and microscopic mechanisms of electronic phenomena in a wide range of materials.

Spin texture of Bi2Se3 thin films in the quantum tunneling limit.

By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111). For thicknesses below six quintuple layers the spin-polarized metallic topological surface states interact with each other via quantum tunneling and a gap opens. Our measurements show that the resulting surface states can be described by massive Dirac cones which are split in a Rashba-like manner due to the substrate induced inversion asymmetry. The inner and the outer Rashba branches have distinct localization in the top and the bottom part of the film, whereas the band apices are delocalized throughout the entire film. Supported by calculations, our observations help in the understanding of the evolution of the surface states at the topological phase transition and provide the groundwork for the realization of two-dimensional spintronic devices based on topological semiconductors.

Disentanglement of surface and bulk Rashba spin splittings in noncentrosymmetric BiTeI.

BiTeI has a layered and noncentrosymmetric structure where strong spin-orbit interaction leads to a giant Rashba spin splitting in the bulk bands. We present direct measurements of the bulk band structure obtained with soft x-ray angle-resolved photoemission (ARPES), revealing the three-dimensional Fermi surface. The observed spindle torus shape bears the potential for a topological transition in the bulk by hole doping. Moreover, the bulk electronic structure is clearly disentangled from the two-dimensional surface electronic structure by means of high-resolution and spin-resolved ARPES measurements in the ultraviolet regime. All findings are supported by ab initio calculations.

Angle-resolved synchrotron photoemission and density functional theory on the iridium modified Si(1 1 1) surface.

The physical and electronic properties of the Ir modified Si(1 1 1) surface have been investigated with the help of angle resolved photoemission spectroscopy and density functional theory. The surface consists of Ir-ring clusters that form a [Formula: see text]reconstruction. A comparison between the measured and calculated band structure of the system reveals that the dispersions of the projected bulk states and the states originating from [Formula: see text] domains are heavily modified due to Umklapp scattering from the surface Brillouin zone. Density of states calculations show that Ir-ring clusters contribute to the states in the vicinity of the Fermi level.

Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier.

Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating a Fermi surface spin texture reminiscent of spin vortices of different radii which can be exploited in spin-based devices. Crucial for any application is the possibility to tune the momentum splitting through an external parameter. Here we show that in Pb quantum well states (QWS) the Rashba splitting depends on the Si substrate doping. Our results imply a doping dependence of the Schottky barrier which shifts the Si valence band relative to the QWS. A similar shift can be achieved by an external gate voltage or ultra-short laser pulses, opening up the possibility of terahertz spintronics.

Atom-specific spin mapping and buried topological states in a homologous series of topological insulators.

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.