Optimizing targeting strategies for lithotripsy through in-vitro and in vivo studies with consideration of respiratory regularity.

BACKGROUND: This work aimed to identify a method to achieve improved stone targeting and safety in shockwave lithotripsy by accounting for respiration. METHODS: We set up an electromotive device simulating renal movement during respiration to place artificial stones within the phantom gel, measuring stone weight changes before and after shockwave exposure and the cavitation damage. We conducted clinical trials using respiratory masks and sensors to monitor and analyze patient respiration during shockwave lithotripsy. RESULTS: The in vitro efficiency of lithotripsy was higher when adjusted for respiration than when respiration was not adjusted for. Slow respiration showed the best efficiency with higher hit rates when not adjusted for respiration. Cavitation damage was also lowest during slow respiration. The clinical study included 52 patients. Respiratory regularity was maintained above 90% in regular respiration. When respiration was regular, the lithotripsy rate was about 65.6%, which stayed at about 40% when respiration was irregular. During the lithotripsy, the participants experienced various events, such as sleep, taking off their masks, talking, movement, coughing, pain, nervousness, and hyperventilation. The generation of shockwaves based on respiratory regularity could reduce pain in patients. CONCLUSION: These results suggest a more accurate lithotripsy should be performed according to respiratory regularity.

Seroepidemiological Survey of Zoonotic Diseases in Small Mammals with PCR Detection of Orientia tsutsugamushi in Chiggers, Gwangju, Korea.

Serosurveillance for zoonotic diseases in small mammals and detection of chiggers, the vector of Orientia tsutsugamushi, were conducted from September 2014 to August 2015 in Gwangju Metropolitan Area. Apodemus agrarius was the most commonly collected small mammals (158; 91.8%), followed by Myodes regulus (8; 4.6%), and Crocidura lasiura (6; 3.5%). The highest seroprevalence of small mammals for O. tsutsugamushi (41; 26.3%) was followed by hantaviruses (24; 15.4%), Rickettsia spp. (22; 14.1%), and Leptospira (2; 1.3%). A total of 3,194 chiggers were collected from small mammals, and 1,236 of 3,194 chiggers were identified with 7 species of 3 genera: Leptotrombidium scutellare was the most commonly collected species (585; 47.3%), followed by L. orientale (422; 34.1%), Euchoengastia koreaensis (99; 8.0%), L. palpale (58; 4.7%), L. pallidum (36; 2.9%), Neotrombicula gardellai (28; 2.3%), and L. zetum (8; 0.6%). L. scutellare was the predominant species. Three of 1,236 chigger mites were positive for O. tsutsugamushi by PCR. As a result of phylogenetic analysis, the O. tsutsugamushi strain of chigger mites had sequence homology of 90.1-98.2% with Boryong. This study provides baseline data on the distribution of zoonotic diseases and potential vectors for the development of prevention strategies of vector borne diseases in Gwangju metropolitan area.

Graphene for true Ohmic contact at metal-semiconductor junctions.

The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).

Carbon nanotube Schottky diode via selective electrochemical metal deposition.

A single walled carbon nanotube (SWNT) Schottky diode was fabricated via selective electrochemical metal deposition on a prefabricated SWNT field effect transistor device. By electrochemically depositing Pd on only one of the prepatterned Ti electrodes, asymmetric Ohmic (at Pd-SWNT) and Schottky (at SWNT-Ti) contacts were resolved, resulting in efficient current rectification. The selective electrochemical deposition was performed by electrically isolating two Ti electrodes connected through a SWNT by depleting hole carriers in the SWNT upon the simultaneous application of high positive gate voltage during the deposition process. The successful selective deposition of Pd metals was confirmed by X-ray photoelectron spectroscopy.

Detection of Borrelia miyamotoi in Ixodes nipponensis in Korea.

BACKGROUND: This study investigated Borrelia species prevalence in ticks from vegetation, through a molecular method, in Gwangju Metropolitan City, South Korea. METHODOLOGY/PRINCIPAL FINDINGS: A total of 484 ticks were collected through flagging and dragging in a suburban area of Gwangju Metropolitan City, South Korea, in 2014. These ticks were morphologically identified and subjected to nested PCR, targeting Borrelia-specific CTP synthase (pyrG), outer surface protein A (ospA) and flagellin (flaB) genes. Molecular biological species identification of Borrelia-positive ticks was conducted via 16S rRNA PCR assays. Of the 484 ticks collected, 417 (86.2%) were identified as Haemaphysalis longicornis, 42 (8.7%) as H. flava, and 25 (5.2%) as Ixodes nipponensis. All the ixodid ticks containing Borrelia species bacteria were confirmed to be I. nipponensis adults, by both morphological and molecular methods. Of the 25 I. nipponensis ticks collected, four (16%) were positive for Borrelia species, three of which were B. afzelii and one B. miyamotoi. CONCLUSIONS/SIGNIFICANCE: Our study has shown the harboring of B. miyamotoi by I. nipponensis in South Korea. Morphological and molecular genetic analyses revealed that, in South Korea, I. nipponensis could potentially transmit B. miyamotoi to humans.

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density.

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l(-1) at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.

CO2 enhanced chemical vapor deposition growth of few-layer graphene over NiO(x).

The use of mild oxidants in chemical vapor deposition (CVD) reactions has proven enormously useful. This was also true for the CVD growth of carbon nanotubes. As yet though, the use of mild oxidants in the CVD of graphene has remained unexplored. Here we explore the use of CO2 as a mild oxidant during the growth of graphene over Ni with CH4 as the feedstock. Both our experimental and theoretical findings provide in-depth insight into the growth mechanisms and point to the mild oxidants playing multiple roles. Mild oxidants lead to the formation of a suboxide in the Ni, which suppresses the bulk diffusion of C species suggesting a surface growth mechanism. Moreover, the formation of a suboxide leads to enhanced catalytic activity at the substrate surface, which allows reduced synthesis temperatures, even as low as 700 °C. Even at these low temperatures, the quality of the graphene is exceedingly high as indicated by a negligible D mode in the Raman spectra. These findings suggest the use of mild oxidants in the CVD fabrication as a whole could have a positive impact.

Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volt by adjusting graphene's work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

Unique photoemission from single-layer graphene on a SiO2 layer by a substrate charging effect.

Single-layer graphene (SLG) shows an anomalously large surface charging effect during scanning photoelectron microscopy (SPEM), which is distinguished from bi-layer graphene (BLG). The different behaviour is believed due to a different screening effect for SLG and BLG.

Single crystal structure of copper hexadecafluorophthalocyanine (F16CuPc) ribbon.

The single crystal structure of a micrometre-scale copper hexadecafluoro-phthalocyanine (F(16)CuPc) ribbon synthesized by vaporization-condensation-recrystallization (VCR) process was resolved by using a synchrotron X-ray diffractometer.

The critical effect of solvent geometry on the determination of fullerene (C60) self-assembly into dot, wire and disk structures.

Geometrically defined C60 self-assembled disks, wires and dots have been systematically obtained via a solution drop-drying process at room temperature; during this process, we discovered that there is a critical correlation between the geometry of the solvent and the final geometry of the self-assembled C60 structure.

Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities.

Liquid GeCl(4) precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl(4), plays a critical role for the successful formation of Ge NWs.

Direct precursor conversion reaction for densely packed Ag2S nanocrystal thin films.

Successful realization of highly crystalline and densely packed Ag2S nanocrystal (NC) films has been achieved by directly converting precursor molecules, Ag(SCOPh), on preheated substrates. When an aliquot of Ag(SCOPh) solution dissolved in trioctylphosphine (TOP) is applied on preheated solid substrates at 160 degrees C, such as SiO2/Si, H-terminated Si, and quartz. Ag2S NC thin films have been formed with instant phase and color changes of the precursor solutions from pale yellow homogeneous solution to black solid films. The average diameter of individual Ag2S NCs forming thin films is ca. 25 nm, as confirmed by examining both isolated Ag2S NCs from thin films and as-made thin film samples by using transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Powder X-ray diffraction (XRD) pattern shows that the synthesized Ag2S NCs have well-defined monoclinic acanthite phase. Direct precursor conversion process has resulted in densely packed Ag2S NCs with reduced interparticle distances owing to efficient removal of TOP during the reaction. Compared to the devices fabricated by the drop-coating process, Ag2S thin film devices fabricated by direct precursor conversion process have shown a ca. 300-fold increased conductance. Such Ag2S NC devices have also displayed reliable photoresponses upon white light illumination with high photosensitivity (S approximately equal to 1).

Selective degradation of chemical bonds: from single-source molecular precursors to metallic Ag and semiconducting Ag2S nanocrystals via instant thermal activation.

Selective formation of metallic Ag and semiconducting Ag(2)S nanocrystals has been achieved via a modified hot-injection process from a single-source precursor molecule, Ag(SCOPh), which can potentially generate both [Ag] and [AgS] fragments simultaneously. When the precursor molecules are injected into a preheated reaction system at 160 degrees C, spherical Ag(2)S nanocrystals are directly obtained even without a molecular activator, such as alkylamines. Mixtures of Ag and Ag(2)S or pure metallic Ag nanocrystals are obtained if the precursor molecules are injected at lower than 160 degrees C or room temperature. These results are attributed to the direct transfer of thermal energies to precursor molecules, which are enough to dissociate S-C as well as Ag-S bonds simultaneously. Detailed characterizations about the produced nanocrystals have been performed using powder X-ray diffraction (XRD), transmission electron microscopy (TEM), as well as energy-dispersive X-ray (EDX) spectrum.

Two species of goby, Boleophthalmus pectinirostris and Scartelaos sp., as the new second intermediate hosts of heterophyid fluke in Korea.

A survey was performed in order to determine the infection status of the metacercariae of heterophyid fluke in two goby species, Boleophthalmus pectinirostris and Scartelaos sp., collected from Gangjin-gun, and Shinangun, Sooncheon-shi, Jeollanam-do, Republic of Korea. A total of three metacercariae of Heterophyopsis continua was found in only one B. pectinirostris (10.0%) from Gangjin-gun. Heterophyes nocens metacercariae were detected in 24 B. pectinirostris (96.0%) and 14 Scartelaos sp. (63.6%) from Shinan-gun. Heterophyopsis continua metacercariae were found in 11 B. pectinirostris (44.0%) and 21 Scartelaos sp. (95.5%) from Shinan-gun. Stictodora fuscata metacercariae were detected in 18 B. pectinirostris (72.0%) from Shinan-gun. No metacercariae were detected in 20 B. pectinirostris from Sooncheon-shi. From the above results, this study is the first to prove that B. pectinirostris and Scartelaos sp. serve as the second intermediate hosts of some heterophyid flukes in Korea.

A rapid synthesis of iron phosphate nanoparticles via surface-mediated spontaneous reaction for the growth of high-yield, single-walled carbon nanotubes.

The direct formation of iron phosphate nanoparticles on hydroxyl-terminated SiO(2)/Si substrates with a narrow size distribution (average diameter = 2.2 nm) is achieved by a simple room temperature spontaneous reaction of ferric chloride and phosphoric acid. Single-walled carbon nanotubes (SWNTs) are grown in high yield from the synthesized iron phosphate nanoparticles by the thermal chemical vapor deposition (CVD) method, as confirmed by atomic force microscopy (AFM) and Raman spectroscopy. Furthermore, three-terminal, p-type, nanotube network field effect transistor (FET) devices are successfully fabricated using the synthesized SWNTs via the photolithography technique. The reduced solubility of Fe(III) ions when they form iron phosphate salts in aqueous media is the main driving force for the nanoparticle formation. Systematic control experiments reveal that the surface property, concentration, and pH of the reaction solution play equally important roles in the formation of nanoparticles.