RESUMO
In view of rising ecological awareness, materials development is primarily aimed at improving the performance and efficiency of innovative and more elaborate materials. However, a materials performance figure of merit should include essential aspects of materials: environmental impact, economic constraints, technical feasibility, etc. Thus, we promote the inclusion of sustainability criteria already during the materials design process. With such a holistic design approach, new products may be more likely to meet the circular economy requirements than when traditional development strategies are pursued. Using catalysts for water electrolysis as an example, we present a modelling method based on experimental data to holistically evaluate processes.
RESUMO
We combine density functional theory calculations and scanning tunneling microscopy investigations to identify the relevant chemical species and reactions in the nucleation phase of chemical vapor deposition. tert-Butylphosphine (TBP) was deposited on a silicon substrate under conditions typical for surface functionalization and growth of semiconductor materials. On the activated hydrogen-covered surface H/Si(001) it forms a strong covalent P-Si bond without loss of the tert-butyl group. Calculations show that site preference for multiple adsorption of TBP is influenced by steric repulsion of the adsorbate's bulky substituent. STM imaging furthermore revealed an anisotropic distribution of TBP with a preference for adsorption perpendicular to the surface dimer rows. The adsorption patterns found can be understood by a mechanism invoking stabilization of surface hydrogen vacancies through electron donation by an adsorbate. The now improved understanding of nucleation in thin-film growth may help to optimize molecular precursors and experimental conditions and will ultimately lead to higher quality materials.
RESUMO
The ß-hydrogen elimination reactions of group 15 alkyl compounds at the example of EH2(t-C4H9) (element E = N-Bi) were investigated and compared to the group 13 example of GaH2(t-C4H9). With the aid of extensive density functional theory based analysis of atomic and electronic structures at the transition state, we can derive three distinct reaction classes. The gallium compound follows the well-known ß-hydride route with participation of an empty p orbital at the metal in a concerted, synchronous fashion, exhibiting a low barrier. For compounds with group 15 elements, we find highly nonsynchronous reactions with high reaction barriers. In the case of nitrogen, a proton-like H atom is transferred via attack of the nitrogen nonbonding electron pair. For the heavier homologues (P-Bi), E-Cα bond breaking occurs first and the H atom does not carry charge at the transition state. The reaction barrier in group 15 homologues is thus determined by the E-Cα bond strength down the group. The results enable a rationale for ligand design for precursors involved in chemical vapor-phase deposition processes because a good ligand needs to stabilize the positive charge at Cα.
RESUMO
The gas phase decomposition reactions of precursor molecules relevant for metal-organic vapour phase epitaxy (MOVPE) of semiconductor thin films are investigated by computational methods on the density-functional level as well as on the ab initio (MP2, CCSD(T)) level. A comprehensive reaction catalogue of uni- and bimolecular reactions is presented for triethylgallium (TEG) as well as for tert-butylphosphine (TBP) containing thermodynamic data together with transition state energies. From these energies it can be concluded that TEG is decomposed in the gas phase under MOVPE conditions (T = 400-675 °C, p = 0.05 atm) to GaH3via a series of ß-hydride elimination reactions. For elevated temperatures, further decomposition to GaH is thermodynamically accessible. In the case of TBP, the original precursor molecule will be most abundant since all reaction channels exhibit either large barriers or unfavorable thermodynamics. Dispersion-corrected density functional calculations (PBE-D3) provide an accurate description of the reactions investigated in comparison to high level CCSD(T) calculations serving as benchmark values.