Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.

For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of nanorod light emitting diodes (LEDs) will help identify the correlation between these two factors. In this work, low-temperature electroluminescent (EL) spectra of InGaN/GaN nanorod arrays were explored and compared with those of planar LEDs. The nanorod LED exhibits a much higher optical output percentage increase when the temperature decreases. The increase is mainly attributed to the increased carriers in the quantum wells for radiative recombination. Also, due to a better spatial overlap of electrons and holes in the quantum wells, the increased number of carriers can be more efficiently recombined in the nanorod device. Next, while the nanorod array shows nearly constant peak energy in the EL spectra at various injection currents at the temperature of 300 K, a blue shift has been observed at 190 K. The results suggest that with less non-radiative recombination and thus more carriers in the quantum wells, carrier screening and band filling still prevail in the partially strain relaxed nanorods. Moreover, when the temperature drops to 77 K, the blue shift of both nanorod and planar devices disappears and the optical output power decreases since there are fewer carriers in the quantum wells for radiative recombination.

High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes.

We fabricated InGaN/GaN nanorod light emitting diode (LED) arrays using nanosphere lithography for nanorod formation, PECVD (plasma enhanced chemical vapor deposition) grown SiO(2) layer for sidewall passivation, and chemical mechanical polishing for uniform nanorod contact. The nano-device demonstrates a reverse current 4.77nA at -5V, an ideality factor 7.35, and an optical output intensity 6807mW/cm(2) at the injection current density 32A/cm(2) (20mA). Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.

The neural basis of monitoring goal progress.

The neural basis of progress monitoring has received relatively little attention compared to other sub-processes that are involved in goal directed behavior such as motor control and response inhibition. Studies of error-monitoring have identified the dorsal anterior cingulate cortex (dACC) as a structure that is sensitive to conflict detection, and triggers corrective action. However, monitoring goal progress involves monitoring correct as well as erroneous events over a period of time. In the present research, 20 healthy participants underwent functional magnetic resonance imagining (fMRI) while playing a game that involved monitoring progress toward either a numerical or a visuo-spatial target. The findings confirmed the role of the dACC in detecting situations in which the current state may conflict with the desired state, but also revealed activations in the frontal and parietal regions, pointing to the involvement of processes such as attention and working memory (WM) in monitoring progress over time. In addition, activation of the cuneus was associated with monitoring progress toward a specific target presented in the visual modality. This is the first time that activation in this region has been linked to higher-order processing of goal-relevant information, rather than low-level anticipation of visual stimuli. Taken together, these findings identify the neural substrates involved in monitoring progress over time, and how these extend beyond activations observed in conflict and error monitoring.