Robust Design of High-Performance Optoelectronic Chalcogenide Crystals from High-Throughput Computation.

High-performance functional materials are the cornerstones of the continuous advance of modern science and technology, but the development of new materials is still challenging. Here, we propose a robust design strategy for novel crystalline solids based on group-theory classification and high-throughput computation, as demonstrated by the successful identification of new optoelectronic semiconductors. First, by means of theoretical group analysis and composition engineering, we obtained 78 prototypical crystal structures and built a computational materials database containing 21,060 ternary chalcogenide compounds. Our high-throughput screening of the coordination characteristics, phase stability, and electronic structures provided 97 candidate semiconductors, including 93 completely new compounds. Among them, 22 crystals with excellent dynamical and thermal stability are predicted to show high photovoltaic conversion efficiency (>30%), comparable to the currently most efficient single-junction GaAs solar cell, owing to their optimal electronic properties and outstanding optical absorption. This discovery of new chalcogenide crystals offers excellent candidates for optoelectronic applications and suggests that our design strategy is a promising way to search for unknown high-performance functional materials.

Computational discovery of PtS2/GaSe van der Waals heterostructure for solar energy applications.

2D van der Waals (vdW) heterostructures as potential materials for solar energy-related applications have been brought to the forefront for researchers. Here, by employing first-principles calculations, we proposed that the PtS2/GaSe vdW heterostructure is a distinguished candidate for photocatalytic water splitting and solar cells. It is shown that the PtS2/GaSe heterostructure exhibits high thermal stability with an indirect band gap of 1.81 eV. We further highlighted the strain induced type-V to type-II band alignment transitions and band gap variations in PtS2/GaSe heterostructures. More importantly, the outstanding absorption coefficients in the visible light region and high carrier mobility further guarantee the photo energy conversion efficiency of PtS2/GaSe heterostructures. Interestingly, the natural type-V band alignments of PtS2/GaSe heterostructures are appropriate for the redox potential of water. On the other hand, the power conversion efficiency of ZnO/(PtS2/GaSe heterostructure)/CIGS (copper indium gallium diselenide) solar cells can achieve ∼17.4%, which can be further optimized up to ∼18.5% by increasing the CIGS thickness. Our present study paves the way for facilitating the potential application of vdW heterostructures as a promising photocatalyst for water splitting as well as the buffer layer for solar cells.

High-performance III-VI monolayer transistors for flexible devices.

Group III-VI family MX (M = Ga and In, and X = S, Se, and Te) monolayers have attracted global interest for their potential applications in electronic devices due to their unexpectedly high carrier mobility. Herein, via density functional theory calculations as well as ab initio quantum transport simulations, we investigated the performance limits of MX monolayer metal oxide semiconductor field-effect transistors (MOSFETs) at the sub-10 nm scale. Our results highlighted that the MX monolayers possessed good structural stability and mechanical isotropy with large ultimate strains and low Young's modulus, which are intensely anticipated in the next-generation flexible devices. More importantly, the MX monolayer MOSFETs show excellent device performance under optimal schemes. The on-state current, delay time, and power dissipation of the MX monolayer MOSFETs satisfy the International Technology Roadmap for Semiconductors (ITRS) 2013 requirements for high-performance devices. Interestingly, the sub-threshold swings were in a very low range from 68 mV dec-1 to 108 mV dec-1, which indicated the favorable gate control ability for fast switching. Therefore, we believe that our findings shed light on the design and application of MX monolayer-based MOSFETs in next-generation flexible electronic devices.

Photoinduced Vacancy Ordering and Phase Transition in MoTe2.

We show that non-equilibrium dynamics plays a central role in the photoinduced 2H-to-1T' phase transition of MoTe2. The phase transition is initiated by a local ordering of Te vacancies, followed by a 1T' structural change in the original 2H lattice. The local 1T' region serves as a seed to gather more vacancies into ordering and subsequently induces a further growth of the 1T' phase. Remarkably, this process is controlled by photogenerated excited carriers as they enhance vacancy diffusion, increase the speed of vacancy ordering, and are hence vital to the 1T' phase transition. This mechanism can be contrasted to the current model requiring a collective sliding of a whole Te atomic layer, which is thermodynamically highly unlikely. By uncovering the key roles of photoexcitations, our results may have important implications for finely controlling phase transitions in transition metal dichalcogenides.

Abnormally Strong Electron-Phonon Scattering Induced Unprecedented Reduction in Lattice Thermal Conductivity of Two-Dimensional Nb2C.

In most materials the electron-phonon (e-p) scattering is far weaker than phonon-phonon (p-p) scattering, and the e-p scattering is usually proportional to the e-p coupling strength. Here, we report strong e-p scattering but low e-p coupling strength in two-dimensional(2D) Nb2C by first-principles calculations. Moreover, the intensity of e-p scattering is close to that of p-p scattering at 300 K in sharp contrast to normal cases. This abnormal e-p scattering is understood by a specific feature that the energy difference between occupied and empty electron states near the Fermi level is in the order of the characteristic phonon energy. By calculating the phonon transport property of 2D Nb2C, we show that this strong e-p scattering can result in great reduction in the lattice thermal conductivity.Our work also highlights a new way for searching novel 2D materials with low lattice thermal conductivity.

Strain-tunable electronic structures and optical properties of semiconducting MXenes.

The feature of an indirect bandgap of most semiconducting transition metal carbides (MXenes) limits their applications in optoelectronics devices. By means of density functional theory (DFT) calculations, we have found that the transition of indirect-direct bandgap can occur in MXenes with different functional groups and structures under appropriate biaxial strain. The controllable bandgap of MXenes stems from the fact that the electronic states near the Fermi level have different responses to tensile strain. The stress-strain curves and phonon spectra suggest that semiconducting MXenes can maintain their stability during a wide range of strains. Moreover, the optical dielectric constants of MXenes are red-shifted and enhanced continuously via applying tensile strains. The tunable electronic and optical properties of semiconducting MXenes make them promising candidates for the design of optoelectronic devices.

Origin of high thermoelectric performance with a wide range of compositions for BixSb2-xTe3 single quintuple layers.

Composition regulation of semiconductors can engineer the band structures and hence optimize their properties for better applications. Herein, we report a BixSb2-xTe3 (BST) single QL with high ZT values (∼1.2 to ∼1.5) at 300 K across a wide range of compositions 0 < x≤ 1. The improved description of band structures by the unfold method reveals the multi-valley bands near the Fermi energy. The high power factor of a p-type BST single QL originates from the robust multi-valley character of valence bands. The wide composition range is ensured by the valence band maximum dominated by the antibonding states of Sb-Te2 bonds, which would be affected little by the disorder. The optimal composition for the BST single QL is attributed to the different contributions from Sb and Bi to the valence band edge. This work paves the way for the further combination of a large power factor and low thermal conductivity across a wide range of compositions.

Comprehensive understanding of intrinsic mobility in the monolayers of III-VI group 2D materials.

Monolayers of III-VI group two-dimensional (2D) materials MX (M = Ga and In and X = S, Se, and Te) have attracted global interest for potential applications in electronic and photoelectric devices due to their attractive physical and chemical characteristics. However, a comprehensive understanding of the distinguished carrier mobility in MX monolayers is of great importance and not yet clear. Herein, using a Boltzmann transport equation (BTE) solver and first principles calculations, we have precisely revealed that the intrinsic mobility in MX monolayers is significantly limited by phonon scattering. Note that the longitudinal acoustic phonon mode and optic phonon modes and were found predominantly coupled with electrons, which strongly restrained the intrinsic mobility in the MX monolayers. Interestingly, apart from a moderate band gap, the GaSe and GaTe monolayers exhibit high electron mobility exceeding 103 cm2 V-1 s-1 and may serve as outstanding electron transport channels. We believe that our findings will shed light on the design and applications of MX monolayers and 2D materials in nanoscale electronic and photoelectric devices.

2D Intrinsic Ferromagnets from van der Waals Antiferromagnets.

Intrinsically ferromagnetic 2D semiconductors are essential and highly sought for nanoscale spintronics, but they can only be obtained from ferromagnetic bulk crystals, while the possibility to create 2D intrinsic ferromagnets from bulk antiferromagnets remains unknown. Herein on the basis of ab initio calculations, we demonstrate this feasibility with the discovery of intrinsic ferromagnetism in an emerging class of single-layer 2D semiconductors CrOX (CrOCl and CrOBr monolayers), which show robust ferromagnetic ordering, large spin polarization, and high Curie temperature. These 2D crystals promise great dynamical and thermal stabilities as well as easy experimental fabrication from their bulk antiferromagnets. The Curie temperature of 2D CrOCl is 160 K, which exceeds the record (155 K) of the most-studied dilute magnetic GaMnAs materials, and could be further enhanced by appropriate strains. Our study offers an alternative promising way to create 2D intrinsic ferromagnets from their antiferromagnetic bulk counterparts and also renders 2D CrOX monolayers great platform for future spintronics.

Coincident modulation of lattice and electron thermal transport performance in MXenes via surface functionalization.

Efficiently modulating the thermal transport performance of materials including MXenes is highly desired as heat transfer is critical in a wide range of applications. However, the design principles for MXenes to achieve optimized thermal conductivity are not yet understood. Herein we highlight that the thermal conductivity modulation can be achieved by altering the surface fuctionalization, which also exhibits unexpected coincident effects on both the lattice and electron contribution to thermal transport. Our results indicate that the functionalization of O significantly decreases both the lattice and electron thermal conductivities of Ti2C MXenes because O will induce not only a shorter phonon relaxation time but also a metal-semiconductor transition, showing great potential for applications including thermoelectrics. In contrast to O, after being functionalized by F or OH both the lattice and electron thermal conductivities are increased, which will improve heat dissipation in electronics and batteries. Our findings will provide a fundamental guideline to the design of MXene-based devices with optimal thermal transport performance.

Tunable Magnetism and Extraordinary Sunlight Absorbance in Indium Triphosphide Monolayer.

Atomically thin two-dimensional (2D) materials have received considerable research interest due to their extraordinary properties and promising applications. Here we predict the monolayered indium triphosphide (InP3) as a new semiconducting 2D material with a range of favorable functional properties by means of ab initio calculations. The 2D InP3 crystal shows high stability and promise of experimental synthesis. It possesses an indirect band gap of 1.14 eV and a high electron mobility of 1919 cm2 V-1 s-1, which can be strongly manipulated with applied strain. Remarkably, the InP3 monolayer suggests tunable magnetism and half-metallicity under hole doping or defect engineering, which is attributed to the novel Mexican-hat-like bands and van Hove singularities in its electronic structure. A semiconductor-metal transition is also revealed by doping 2D InP3 with electrons. Furthermore, monolayered InP3 exhibits extraordinary optical absorption with significant excitonic effects in the entire range of the visible light spectrum. All these desired properties render 2D InP3 a promising candidate for future applications in a wide variety of technologies, in particular for electronic, spintronic, and photovoltaic devices.

Metastable Stacking-Polymorphism in Ge2Sb2Te5.

Metastable rocksalt structured Ge2Sb2Te5 is the most widely used phase-change material for data storage, yet the atomic arrangements of which are still under debate. In this work, we have proposed metastable stacking-polymorphism in cubic Ge2Sb2Te5 based on first-principles calculations. Our results show that cubic Ge2Sb2Te5 is actually polymorphic, varying from randomly distributed vacancies to highly ordered vacancy layers; consequently, the electrical property varies between metallic and semiconducting. These different atomic stackings of cubic Ge2Sb2Te5 can be obtained at different experimental synthetic conditions. The concept of stacking-polymorphic Ge2Sb2Te5 provides important fundamentals for metastable Ge2Sb2Te5 and is useful for tuning the performance of the phase-change materials.

Pressure-Induced Destabilization and Anomalous Lattice Distortion in TcO2.

Tc-based oxides are of interest because of their complex crystalline structures. In this work, the phonon dispersions, lattice distortions, and elastic constants of TcO2 at external pressures up to 120 GPa were comprehensively studied using first-principles calculations. It is found that the lattice dynamic stability of TcO2 can be assessed by fitting the Γ-Z acoustical phonon branch. The applied external pressure can be divided into three ranges: the low-pressure stable range, the middle-pressure buckling range, and the high-pressure unstable range. Interestingly, the variation tendency of the low-pressure stable range is very close to that of the high-pressure unstable range. On the other hand, the TcO2 lattice responds intensely to external pressure in the middle-pressure buckling range, which can be sustained under about 71 GPa pressure. More importantly, we have unraveled the pressure-induced lattice distortion in TcO2, which leads to anomalous behaviors for the lattice constants, Tc-O bond lengths, and elastic constants at 10 and 20 GPa external pressures.

Adsorption and diffusion of hydrogen and oxygen in FCC-Co: a first-principles study.

Hydrogen and oxygen play an important role in the hydrogen embrittlement and oxidation of novel Co-based alloys with γ/γ' microstructure. In this study, the adsorption of hydrogen and oxygen atoms on the FCC-Co(111) surface and their diffusion behavior from the surface into the sub-layers and bulk have been investigated by means of first-principles calculations. It is observed that hydrogen and oxygen atoms prefer to adsorb on the fcc and hcp (threefold hollow) sites, respectively. The hydrogen atom can penetrate into the first and second sub-layers energetically, while it is not feasible for the oxygen atom as diffusion from the surface into the first sub-layer is more difficult. It is found that the calculated diffusion coefficients of hydrogen are in good agreement with the available experimental data. Finally, we briefly discuss the changes in total magnetic moment along the Oct-Tet-Oct diffusion path and the associated electronic structures. The present work is helpful to provide comprehensive guidance for the development and applications of novel Co-based alloys.

Large-Gap Quantum Spin Hall State in MXenes: d-Band Topological Order in a Triangular Lattice.

MXenes are a large family of two-dimensional (2D) early transition metal carbides that have shown great potential for a host of applications ranging from electrodes in supercapacitors and batteries to sensors to reinforcements in polymers. Here, on the basis of first-principles calculations, we predict that Mo2MC2O2 (M = Ti, Zr, or Hf), belonging to a recently discovered new class of MXenes with double transition metal elements in an ordered structure, are robust quantum spin Hall (QSH) insulators. A tight-binding (TB) model based on the dz2-, dxy-, and dx2-y2-orbital basis in a triangular lattice is also constructed to describe the QSH states in Mo2MC2O2. It shows that the atomic spin-orbit coupling (SOC) strength of M totally contributes to the topological gap at the Γ point, a useful feature advantageous over the usual cases where the topological gap is much smaller than the atomic SOC strength based on the classic Kane-Mele (KM) or Bernevig-Hughes-Zhang (BHZ) model. Consequently, Mo2MC2O2 show sizable gaps from 0.1 to 0.2 eV with different M atoms, sufficiently large for realizing room-temperature QSH effects. Another advantage of Mo2MC2O2 MXenes lies in their oxygen-covered surfaces which make them antioxidative and stable upon exposure to air.

The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene.

Artificial monolayer black phosphorus, so-called phosphorene, has attracted global interest with its distinguished anisotropic, optoelectronic, and electronic properties. Here, we unraveled the shear-induced direct-to-indirect gap transition and anisotropy diminution in phosphorene based on first-principles calculations. Lattice dynamic analysis demonstrates that phosphorene can sustain up to 10% applied shear strain. The bandgap of phosphorene experiences a direct-to- indirect transition when 5% shear strain is applied. The electronic origin of the direct-to-indirect gap transition from 1.54 eV at ambient conditions to 1.22 eV at 10% shear strain for phosphorene is explored. In addition, the anisotropy diminution in phosphorene is discussed by calculating the maximum sound velocities, effective mass, and decomposed charge density, which signals the undesired shear-induced direct-to-indirect gap transition in applications of phosphorene for electronics and optoelectronics. On the other hand, the shear-induced electronic anisotropy properties suggest that phosphorene can be applied as the switcher in nanoelectronic applications.

Flexible two-dimensional Tin+1Cn (n = 1, 2 and 3) and their functionalized MXenes predicted by density functional theories.

Two-dimensional (2D) transition metal carbides/nitrides Mn+1Xn labeled as MXenes are attracting increasing interest due to promising applications as Li-ion battery anodes and hybrid electro-chemical capacitors. To realize MXenes devices in future flexible practical applications, it is necessary to have a full understanding of the mechanical properties of MXenes under deformation. In this study, we extensively investigated the stress-strain curves and the deformation mechanisms in response to tensile stress by first principles calculations using 2D Tin+1Cn (n = 1, 2 and/or 3) as examples. Our results show that 2D Ti2C can sustain large strains of 9.5%, 18% and 17% under tensions of biaxial and uniaxial along x and y, respectively, which respectively increase to 20%, 28% and 26.5% for 2D Ti2CO2 due to surface functionalizing oxygen, which is much better than graphene (15% biaxial). The failure of 2D Tin+1Cn MXene is due to the significant collapse of the surface atomic layer; however, surface functionalization could slow down this collapse, resulting in the improvement of mechanical flexibility. We have also discussed the critical strains and Young's modulus of 2D Tin+1Cn and Tin+1CnO2. Our results provide an insight into the microscopic deformation mechanism of MXenes and hence benefit their applications in flexible electronic devices.

Peierls distortion mediated reversible phase transition in GeTe under pressure.

With the advent of big synchrotron facilities around the world, pressure is now routinely placed to design a new material or manipulate the properties of materials. In GeTe, an important phase-change material that utilizes the property contrast between the crystalline and amorphous states for data storage, we observed a reversible phase transition of rhombohedral ↔ rocksalt ↔ orthorhombic ↔ monoclinic coupled with a semiconductor ↔ metal interconversion under pressure on the basis of ab initio molecular dynamics simulations. This interesting reversible phase transition under pressure is believed to be mediated by Peierls distortion in GeTe. Our results suggest a unique way to understand the reversible phase transition and hence the resistance switching that is crucial to the applications of phase-change materials in nonvolatile memory. The present finding can also be expanded to other IV-VI semiconductors.

Contamination and health risks from heavy metals in cultivated soil in Zhangjiakou City of Hebei Province, China.

A total of 79 topsoil samples (ranging from 0 to 20 cm in depth) were collected from a grape cultivation area of Zhangjiakou City, China. The total concentrations of As, Cd, Hg, Cr, Cu, Mn, Ni, Pb, and Zn in soil samples were determined to evaluate pollution levels and associated health risks in each sample. Pollution levels were calculated using enrichment factors (EF) and geoaccumulation index (I geo). Health risks for adults and children were quantified using hazard indexes (HI) and aggregate carcinogenic risks (ACR). The mean concentrations of measured heavy metals Cd, Hg, and Cu, only in the grape cultivation soil samples, were higher than the background values of heavy metals in Hebei Province. According to principal component analysis (PCA), the anthropogenic activities related to agronomic and fossil fuel combustion practices attributed to higher accumulations of Cd, Hg, and Cu, which have slightly polluted about 10-40% of the sampled soils. However, the HI for all of the heavy metals were lower than 1 (within safe limits), and the ACR of As was in the 10(-6)-10(-4) range (a tolerable level). This suggests the absence of both non-carcinogenic and carcinogenic health risks for adults and children through oral ingestion and dermal absorption exposure pathways in the studied area. It should be also noted that the heightened vulnerability of children to health risks was accounted for higher HI and ACR values. Consequently, heavy metal concentrations (e.g., Cd, Hg, Cu) should be periodically monitored in these soils and improved soil management practices are required to minimize possible impacts on children's health.