Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment.

In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal-oxide-semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alteration of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).

Effects of phosphorous and antimony doping on thin Ge layers grown on Si.

Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping concentrations from 1 to 50 × 1018 cm-3. The introduction of P dopants has efficiently promoted TD reduction, whose potential mechanism has been explored by comparing it to the well-established Sb-doped Ge-on-Si system. P and Sb dopants reveal different defect-suppression mechanisms in Ge-on-Si samples, inspiring a novel co-doping technique by exploiting the advantages of both dopants. The surface TDD of the Ge buffer has been further reduced by the co-doping technique to the order of 107 cm-2 with a thin Ge layer (of only 500 nm), which could provide a high-quality platform for high-performance Si-based semiconductor devices.

Formamidinium Lead Halide Perovskite Nanocomposite Scintillators.

While there is great demand for effective, affordable radiation detectors in various applications, many commonly used scintillators have major drawbacks. Conventional inorganic scintillators have a fixed emission wavelength and require expensive, high-temperature synthesis; plastic scintillators, while fast, inexpensive, and robust, have low atomic numbers, limiting their X-ray stopping power. Formamidinium lead halide perovskite nanocrystals show promise as scintillators due to their high X-ray attenuation coefficient and bright luminescence. Here, we used a room-temperature, solution-growth method to produce mixed-halide FAPbX3 (X = Cl, Br) nanocrystals with emission wavelengths that can be varied between 403 and 531 nm via adjustments to the halide ratio. The substitution of bromine for increasing amounts of chlorine resulted in violet emission with faster lifetimes, while larger proportions of bromine resulted in green emission with increased luminescence intensity. By loading FAPbBr3 nanocrystals into a PVT-based plastic scintillator matrix, we produced 1 mm-thick nanocomposite scintillators, which have brighter luminescence than the PVT-based plastic scintillator alone. While nanocomposites such as these are often opaque due to optical scattering from aggregates of the nanoparticles, we used a surface modification technique to improve transmission through the composites. A composite of FAPbBr3 nanocrystals encapsulated in inert PMMA produced even stronger luminescence, with intensity 3.8× greater than a comparative FAPbBr3/plastic scintillator composite. However, the luminescence decay time of the FAPbBr3/PMMA composite was more than 3× slower than that of the FAPbBr3/plastic scintillator composite. We also demonstrate the potential of these lead halide perovskite nanocomposite scintillators for low-cost X-ray imaging applications.

Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1-xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems.

Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys.

Using spectroscopic ellipsometry measurements on GaP1-xBix/GaP epitaxial layers up to x = 3.7% we observe a giant bowing of the direct band gap ([Formula: see text]) and valence band spin-orbit splitting energy (ΔSO). [Formula: see text] (ΔSO) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in ΔSO in going from GaP to GaP0.99Bi0.01. The evolution of [Formula: see text] and ΔSO with x is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of [Formula: see text] and ΔSO with x. In contrast to the well-studied GaAs1-xBix alloy, in GaP1-xBix substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of [Formula: see text] and ΔSO and in particular for the giant bowing observed for x ≲ 1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP1-xBix alloy band structure.

Effect of Single and Combined Monochromatic Light on the Human Pupillary Light Response.

The pupillary light reflex (PLR) is a neurological reflex driven by rods, cones, and melanopsin-containing retinal ganglion cells. Our aim was to achieve a more precise picture of the effects of 5-min duration monochromatic light stimuli, alone or in combination, on the human PLR, to determine its spectral sensitivity and to assess the importance of photon flux. Using pupillometry, the PLR was assessed in 13 participants (6 women) aged 27.2 ± 5.41 years (mean ± SD) during 5-min light stimuli of purple (437 nm), blue (479 nm), red (627 nm), and combinations of red+purple or red+blue light. In addition, nine 5-min, photon-matched light stimuli, ranging in 10 nm increments peaking between 420 and 500 nm were tested in 15 participants (8 women) aged 25.7 ± 8.90 years. Maximum pupil constriction, time to achieve this, constriction velocity, area under the curve (AUC) at short (0-60 s), and longer duration (240-300 s) light exposures, and 6-s post-illumination pupillary response (6-s PIPR) were assessed. Photoreceptor activation was estimated by mathematical modeling. The velocity of constriction was significantly faster with blue monochromatic light than with red or purple light. Within the blue light spectrum (between 420 and 500 nm), the velocity of constriction was significantly faster with the 480 nm light stimulus, while the slowest pupil constriction was observed with 430 nm light. Maximum pupil constriction was achieved with 470 nm light, and the greatest AUC0-60 and AUC240-300 was observed with 490 and 460 nm light, respectively. The 6-s PIPR was maximum after 490 nm light stimulus. Both the transient (AUC0-60) and sustained (AUC240-300) response was significantly correlated with melanopic activation. Higher photon fluxes for both purple and blue light produced greater amplitude sustained pupillary constriction. The findings confirm human PLR dependence on wavelength, monochromatic or bichromatic light and photon flux under 5-min duration light stimuli. Since the most rapid and high amplitude PLR occurred within the 460-490 nm light range (alone or combined), our results suggest that color discrimination should be studied under total or partial substitution of this blue light range (460-490 nm) by shorter wavelengths (~440 nm). Thus for nocturnal lighting, replacement of blue light with purple light might be a plausible solution to preserve color discrimination while minimizing melanopic activation.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1-xBix/GaNyAs1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 µm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

Optical gain in GaAsBi/GaAs quantum well diode lasers.

Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10-15 cm(-1) and a peak modal gain of 24 cm(-1), corresponding to a material gain of approximately 1500 cm(-1) at a current density of 2 kA cm(-2). To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared.

Relationship between Human Pupillary Light Reflex and Circadian System Status.

Intrinsically photosensitive retinal ganglion cells (ipRGCs), whose photopigment melanopsin has a peak of sensitivity in the short wavelength range of the spectrum, constitute a common light input pathway to the olivary pretectal nucleus (OPN), the pupillary light reflex (PLR) regulatory centre, and to the suprachiasmatic nuclei (SCN), the major pacemaker of the circadian system. Thus, evaluating PLR under short wavelength light (λmax ≤ 500 nm) and creating an integrated PLR parameter, as a possible tool to indirectly assess the status of the circadian system, becomes of interest. Nine monochromatic, photon-matched light stimuli (300 s), in 10 nm increments from λmax 420 to 500 nm were administered to 15 healthy young participants (8 females), analyzing: i) the PLR; ii) wrist temperature (WT) and motor activity rhythms (WA), iii) light exposure (L) pattern and iv) diurnal preference (Horne-Östberg), sleep quality (Pittsburgh) and daytime sleepiness (Epworth). Linear correlations between the different PLR parameters and circadian status index obtained from WT, WA and L recordings and scores from questionnaires were calculated. In summary, we found markers of robust circadian rhythms, namely high stability, reduced fragmentation, high amplitude, phase advance and low internal desynchronization, were correlated with a reduced PLR to 460-490 nm wavelengths. Integrated circadian (CSI) and PLR (cp-PLR) parameters are proposed, that also showed an inverse correlation. These results demonstrate, for the first time, the existence of a close relationship between the circadian system robustness and the pupillary reflex response, two non-visual functions primarily under melanopsin-ipRGC input.