Performance of long-wave infrared band of microstructured heavily doped InAsSb on type II superlattice layer part 1: the photonic study.

This article deals with the optical study of nanostructured components which absorb light across the entire long-wave infrared (LWIR) spectral band. The components are made of type-II superlattice (T2SL) absorber and highly doped InAsSb, the latter being nanostructured to ensure multiple resonances. We studied two components: in the first one, the T2SL has a thickness of 1.6 µm, and in the second its thickness is 300 nm. The calculated absorption spectra were shown and the components revealed high absorption thanks to optical resonance and high angular acceptance. A fabrication process has been developed, and optical measurements have confirmed the reliability of the model.

Long indium-rich InGaAs nanowires by SAG-HVPE.

We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50µm h-1and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.

THz time-domain spectroscopy modulated with semiconductor plasmonic perfect absorbers.

Terahertz time-domain spectroscopy (THz-TDS) at room temperature and standard atmosphere pressure remains so far the backbone of THz photonics in numerous applications for civil and defense levels. Plasmonic microstructures and metasurfaces are particularly promising for improving THz spectroscopy techniques and developing biomedical and environmental sensors. Highly doped semiconductors are suitable for replacing the traditional plasmonic noble metals in the THz range. We present a perfect absorber structure based on semiconductor III-Sb epitaxial layers. The insulator layer is GaSb while the metal-like layers are Si doped InAsSb (∼ 5·1019 cm-3). The doping is optically measured in the IR with polaritonic effects at the Brewster angle mode. Theoretically, the surface can be engineered in frequency selective absorption array areas of an extensive THz region from 1.0 to 6.0 THz. The technological process is based on a single resist layer used as hard mask in dry etching defined by electron beam lithography. A wide 1350 GHz cumulative bandwidth experimental absorption is measured in THz-TDS between 1.0 and 2.5 THz, only limited by the air-exposed reflectance configuration. These results pave the way to implement finely tuned selective surfaces based on semiconductors to enhance light-matter interaction in the THz region.

Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14.

A huge amount of thermal energy is available close to material surfaces in radiative and nonradiative states, which can be useful for matter characterization or energy harvesting. Even though a full class of novel nanoengineered devices has been predicted over the last two decades for exploiting near-field thermal photons, efficient near-field thermophotovoltaic conversion could not be achieved experimentally until now. Here, we realize a proof of principle by using a micrometer-sized indium antimonide photovoltaic cell cooled at 77 K and approached at nanometer distances from a hot (∼730 K) graphite microsphere emitter. We demonstrate a near-field power conversion efficiency of the cell above 14% and unprecedented electrical power density outputs (0.75 W cm-2), which are orders of magnitude larger than all previous attempts. These results highlight that near-field thermophotovoltaic converters are now competing with other thermal-to-electrical conversion devices and also pave the way for efficient photoelectric detection of near-field thermal photons.

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics.

Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.

Infrared spectral filter based on all-semiconductor guided-mode resonance.

We present a theoretical and experimental study of guided-mode resonant (GMR) spectral filters made of III-V semiconductors and operating in the long-wave infrared (LWIR) wavelength range. In the scope of the colorization of infrared photodetectors, we used materials fully compatible with the epitaxial growth of Type 2 super lattice LWIR photodetectors: heavily n-doped InAsSb for the grating and GaSb for the waveguide of the GMR resonator.

Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial.

We have investigated the effective dielectric response of a subwavelength grating made of highly doped semiconductors (HDS) excited in reflection, using numerical simulations and spectroscopic measurement. The studied system can exhibit strong localized surface resonances and has, therefore, a great potential for surface-enhanced infrared absorption (SEIRA) spectroscopy application. It consists of a highly doped InAsSb grating deposited on lattice-matched GaSb. The numerical analysis demonstrated that the resonance frequencies can be inferred from the dielectric function of an equivalent homogeneous slab by accounting for the complex reflectivity of the composite layer. Fourier transform infrared reflectivity (FTIR) measurements, analyzed with the Kramers-Kronig conversion technique, were used to deduce the effective response in reflection of the investigated system. From the knowledge of this phenomenological dielectric function, transversal and longitudinal energy-loss functions were extracted and attributed to transverse and longitudinal resonance modes frequencies.

All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range.

We propose 1D periodic, highly doped InAsSb gratings on GaSb substrates as biosensing platforms applicable for surface plasmon resonance and surface enhanced infrared absorption spectroscopies. Based on finite-difference time-domain simulations, the electric field enhancement and the sensitivity on refractive index variations are investigated for different grating geometries. The proposed, optimized system achieves sensitivities of 900 nm RIU-1. A clear red shift of the plasmon resonance as well as the enhancement of an absorption line are presented for 2 nm thin adlayers in simulations. We experimentally confirm the high sensitivity of the InAsSb grating by measurements of the wavelength shift induced by a 200 nm thin polymethylmethacrylate layer and demonstrate an enhancement of vibrational signals. A comparison to a gold grating with equivalent optical properties in the mid-infrared is performed. Our simulations and experimental results underline the interest in the alternative plasmonic material InAsSb for highly sensitive biosensors for the mid-infrared spectral range.

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix.

By using metal-free plasmonics, we report on the excitation of Fano-like resonances in the mid-infrared where the Fano asymmetric parameter, q, varies when the dielectric environment of the plasmonic resonator changes. We use silicon doped InAsSb alloy deposited by molecular beam epitaxy on GaSb substrate to realize the plasmonic resonators exclusively based on semiconductors. We first demonstrate the possibility to realize high quality samples of embedded InAsSb plasmonic resonators into GaSb host using regrowth technique. The high crystalline quality of the deposited structure is confirmed by scanning transmission electron microscopy (STEM) observation. Second, we report Fano-like resonances associated to localized surface plasmons in both cases: uncovered and covered plasmonic resonators, demonstrating a strong line shape modification. The optical properties of the embedded structures correspond to those modeled by finite-difference time-domain (FDTD) method and by a model based on Fano-like line shape. Our results show that all-semiconductor plasmonics gives the opportunity to build new plasmonic structures with embedded resonators of highly doped semiconductor in a matrix of un-doped semiconductor for mid-IR applications.

Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration.

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to the excitation of a leaky electromagnetic mode, the Brewster "mode", propagating in the metallic layer deposited on a dielectric material. Potential interest of this mode for in situ monitoring during device fabrication is also discussed.

A universal design to realize a tunable perfect absorber from infrared to microwaves.

We propose a design for an universal absorber, characterized by a resonance frequency that can be tuned from visible to microwave frequencies independently of the choice of the metal and the dielectrics involved. An almost perfect absorption up to 99.8% is demonstrated at resonance for all polarization states of light and for a very wide angular aperture. These properties originate from a magnetic Fabry-Perot mode that is confined in a dielectric spacer of λ/100 thickness by a metamaterial layer and a mirror. An extraordinary large funneling through nano-slits explains how light can be trapped in the structure. Simple scaling laws can be used as a recipe to design ultra-thin perfect absorbers whatever the materials and the desired resonance wavelength, making our design truly universal.